Creating gradients of nanostructure on the surface has found broad applications such as enhanced optical spectroscopy, optical storage of information, and broadband solar energy harvesting. Here, a facile strategy is presented for fabricating gradient nanoparticle arrays with tunable size. It takes a ZnO:Ga microwire as the starting material, and the Ga 3+ doping gradient along the microwire is induced by the high voltage applied. Such a doping gradient facilitates the formation of a temperature gradient in a Joule heating process. And this temperature gradient produced by this technique can be as high as 800 °C/mm, which could be later used for gradient annealing of thin metal films. After annealing, the thin metal films turn to gradient nanoparticle arrays. The obtained gradient nanoparticle arrays are confirmed effective in multi-wavelength surface enhanced Raman scattering enhancement.
Bao Jiachen,Huang Luying,Liu Yan,Liu Fenghua,Xie Hangxing,Wu Weiping
In this paper, a three-step annealing process was employed to treat IGZO thin-film field-effect transistors (TFTs). We observed that TFTs prepared by an initial high-temperature thermal annealing exhibited a low threshold voltage. By employing a second-step low-temperature annealing, the threshold voltage of the TFT was positively shifted, demonstrating improved turn-off characteristics. However, after this process, a significant decrease in TFT mobility and a change in threshold voltage were observed. By introducing a third 633 nm laser annealing technique, we managed to control the threshold voltage and improve mobility. To investigate the mechanism of the changes in TFT performances up to different post-annealing processes, a series of characterization techniques were employed to explain the TFT performance changes.
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