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Materials Chemistry Frontiers · 2025 · IF 6.4

Supercritical CO2-induced plastic deformation on two-dimensional SrZrO3 for its multiferroic performance

Yapeng Dong,Yuning Liang,Bo Gao,Qun Xu

Exploring advanced technology to obtain quantum materials presenting novel and unexpected electronic states upon proper manipulation is an important research endeavor. Usually, plastic deformation can lead to some amount of disruption that can result in new physical phenomena and fascinating structures. However, how to realize efficient plasticization and manipulation to obtain irreversible variation in such materials, especially those presenting quantum material behavior, is a great challenge. Herein, we show that upon plastic deformation induced by supercritical CO2 (SC CO2) on SrZrO3, typically at a pressure of 16 MPa, SrZrO3 experiences a transition from a bulk material to a two-dimensional (2D) structure. More importantly, it can be observed that the octahedral rotation of ZrO6 is suppressed. Furthermore, plastic deformation frequently induces magnetism in SrZrO3. Via polarization characterization, SrZrO3 displays multiferroic characteristics, exhibiting a considerable enhancement in the saturation magnetisation strength and polarization strength. At room temperature, SrZrO3 exhibits a saturated magnetisation of 0.1280 emu g−1, accompanied by a polarization of 0.27 μC cm−2. Therefore, this work demonstrates that plastically deformed SrTiO3 induced by SC CO2 can successfully transition into a quantum multiferroic material. These results establish a new method toward plastic deformation for the manipulation of the electronic properties of quantum materials.

CAS / MDL: 261944-56-3
研究领域: 材料科学 · 凝聚态物理 · 量子物理
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INORGANIC CHEMISTRY COMMUNICATIONS · 2025 · IF 5.4

Investigation of field-controlled magnetocaloric switching effect in single crystal antiferromagnetic MnBi2Te4

Qingwang Bai,Mingxiang Xu

Being the first intrinsic antiferromagnetic (AFM) topological insulator (TI), MnBi 2 Te 4 , has garnered significant attention as an ideal platform for realizing diverse exotic topological quantum states. However, little is known about the magnetocaloric properties of MnBi 2 Te 4 to date. In this work, we report the magnetocaloric effect, rotating magnetocaloric effect, and magnetocaloric switching effect of single-crystal MnBi 2 Te 4 . Under 0–9 T, the maximum magnetic entropy changes (−ΔS M ) obtained are 2.5 J kg −1 K −1 and 2.1J kg −1 K −1 , when H∥c and H∥ab, respectively. Furthermore, the anisotropy in the −ΔS M between the two crystallographic orientations gives MnBi 2 Te 4 single crystals a rotational magnetocaloric effect. The sample exhibits a rotating entropy change of 0.4J kg −1 K −1 under a magnetic field of 9 T as the magnetic field is rotated from the ab plane to the c axis. More importantly, MnBi 2 Te 4 exhibits a coexistence of conventional and inverse magnetocaloric effects by switching between them at a specific temperature and magnetic field, that is, the magnetocaloric switching effect. Moreover, the switching temperature of MnBi 2 Te 4 can be modulated by changing the magnetic field, so that it is suitable for various constant-temperature baths. This study provides a meaningful clue for the design and exploration of high performance MCE-based constant-temperature devices.

CAS / MDL: 1304-82-1 12032-88-1
研究领域: 凝聚态物理 · 拓扑材料 · 磁热学 · 量子材料
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Matter · 2025 · IF 17.5

Immediate ultrasmall current-tunable anomalous Hall effect

Li Yang,Hao Wu,Fei Guo,Gaojie Zhang,Wenfeng Zhang,Haixin Chang

Electrical control of the anomalous Hall effect (AHE) provides an important gateway to reveal and regulate topological properties of spins. However, direct, immediate electrical tuning of the AHE in materials has been elusive, unfeasible, and rarely reported. Here, we demonstrate direct, immediate, nonlinear, electric current regulation of the AHE in a single, novel, van der Waals, room-temperature, ferromagnetic, ultrathin, two-dimensional (2D) crystal for intrinsic sensitivity of nodal electronic structures induced by 2D spin-orbit coupling (SOC) in a 2D quantum limit with an ultrasmall current (∼10 2 A cm −2 ). The multivalued electrical tuning of anomalous Hall resistance (R AHE ) ( R A H E 1 R A H E 2 ∗ 100 % ) is up to 584% and remains 126% at room temperature. The squared correlation between R AHE and longitudinal resistance indicates an SOC-dominated Berry curvature-induced AHE. This immediate-current AHE with distinct dependence on the dimension, crystal layer, and electronic topology provides unique quantum platforms for probing the essence of the dimension and for low-power spintronics and brain-like quantum devices.

研究领域: 凝聚态物理 · 量子材料 · 自旋电子学
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ADVANCED MATERIALS · 2018 ·Vol. 30 ·期 22 ·1707152 · IF 21.95

Anisotropic Broadband Photoresponse of Layered Type-II Weyl Semimetal MoTe2

Jiawei Lai,Xin Liu,Junchao Ma,Qinsheng Wang,Kenan Zhang,Xiao Ren,Yinan Liu,Qiangqiang Gu,Xiao Zhuo,Wei Lu,Yang Wu,Yuan Li,Ji Feng,Shuyun Zhou,Jian-Hao Chen,Dong Sun

Photodetectors based on Weyl semimetal promise extreme performance in terms of highly sensitive, broadband and self-powered operation owing to its extraordinary material properties. Layered Type-II Weyl semimetal that break Lorentz invariance can be further integrated with other two-dimensional materials to form van der Waals heterostructures and realize multiple functionalities inheriting the advantages of other two-dimensional materials. Herein, we report the realization of a broadband self-powered photodetector based on Type-II Weyl semimetal T d -MoTe 2 . The prototype metal–MoTe 2 –metal photodetector exhibits a responsivity of 0.40 mA W −1 and specific directivity of 1.07 × 10 8 Jones with 43 μs response time at 532 nm. Broadband responses from 532 nm to 10.6 μm are experimentally tested with a potential detection range extendable to far-infrared and terahertz. Furthermore, we identify the response of the detector is polarization angle sensitive due to the anisotropic response of MoTe 2 . The anisotropy is found to be wavelength dependent, and the degree of anisotropy increases as the excitation wavelength gets closer to the Weyl nodes. In addition, with power and temperature dependent photoresponse measurements, the photocurrent generation mechanisms are investigated. Our results suggest this emerging class of materials can be harnessed for broadband angle sensitive, self-powered photodetection with decent responsivities.

研究领域: 凝聚态物理 · 光电子学 · 量子材料 · 纳米技术 · 二维材料
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ADVANCED MATERIALS · 2025 ·Vol. 37 ·期 8 ·2404698 · IF 26.8

Scalable Synthesis of 2D ErOCl with Sub-meV Narrow Emissions at Telecom Band

Panqi Huang,Youxuan Wu,Meng Gao,Junxin Chen,Bowen Ma,Jiuxiang Dai,Jing Zhang,Ziye Zhu,Wen Xiao,Zhitong Jin,Wu Zhou,Wenbin Li,Ya-Qing Bie,Lin Zhou

Van der Waals (vdWs) materials are promising candidates for hetero-integration with silicon photonics toward miniaturization and integration. VdWs materials like molybdenum telluride and black phosphorus, despite being prominent, exhibit air sensitivity, and their room temperature emissions can be significantly broadened by tens of meV. Here, a self-encapsulation strategy is developed to scalably synthesize robust 2D vdWs ErOCl with sub-meV narrow emissions at the telecom C-band. Diverse 2D rare earth materials are also grown via chemical vapor deposition (TmOCl, YbOCl, HoOCl, DyOCl, SmOCl, NdOCl, TbOCl, GdOCl, EuOCl, and PrOCl), demonstrating the strategy's generalizability. The as-grown ErOCl exhibits high crystalline quality and excellent ambient and thermal stability (300 °C). Photoluminescence analysis reveals a series of narrow emissions across the visible to near-infrared spectrum. The ErOCl's emission at the telecom band is narrowest among 2D luminescent materials, and suitable for integrating with photonic chips. Temperature-dependent photoluminescence spectra facilitate the understanding of emission mechanisms, analyzed using a crystal field perturbation model. Moreover, these emissions can be tuned by external magnetic fields. This research not only pioneers a novel strategy for synthesizing 2D rare earth materials but also paves the way for innovative building blocks in the realm of on-chip optical communications.

CAS / MDL: 7447-40-7 7647-14-5
研究领域: 材料科学 · 纳米光子学 · 光电子学 · 量子材料 · 集成光子学
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ADVANCED MATERIALS · 2023 ·Vol. 35 ·期 16 ·2208800 · IF 29.4

Origin of the Anomalous Electrical Transport Behavior in Fe-Intercalated Weyl Semimetal Td-MoTe2

Tianyang Wang,Xuan Luo,Jingjing Gao,Zhongzhu Jiang,Wei Wang,Xingcai Yang,Nan Zhou,Xiaoguang Zhu,Lei Zhang,Wenjian Lu,Wenhai Song,Hongyan Lv,Yuping Sun

Weyl semimetal T d -MoTe 2 has recently attracted much attention due to its intriguing electronic properties and potential applications in spintronics. Here, Fe-intercalated T d -Fe x MoTe 2 single crystals (0 < x < 0.15 ) are grown successfully. The electrical and thermoelectric transport results consistently demonstrate that the phase transition temperature T S is gradually suppressed with increasing x . Theoretical calculation suggests that the increased energy of the T d phase, enhanced transition barrier, and more occupied bands in 1T′ phase is responsible for the suppression in T S . In addition, a ρ α –ln T behavior induced by Kondo effect is observed with x ≥ 0.08, due to the coupling between conduction carriers and the local magnetic moments of intercalated Fe atoms. For T d -Fe 0.15 MoTe 2 , a spin-glass transition occurs at ≈10 K. The calculated band structure of T d -Fe 0.25 MoTe 2 shows that two flat bands exist near the Fermi level, which are mainly contributed by the d yz and d x 2 − y 2 ${{\rm{d}}_{{x^2} - {y^2}}}$ orbitals of the Fe atoms. Finally, the electronic phase diagram of T d -Fe x MoTe 2 is established for the first time. This work provides a new route to control the structural instability and explore exotic electronic states for transition-metal dichalcogenides.

研究领域: 凝聚态物理 · 材料科学 · 量子材料 · 自旋电子学 · 电子输运
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ADVANCED MATERIALS · 2021 ·Vol. 33 ·期 31 ·2008586 · IF 30.849

Manipulating Ferromagnetism in Few-Layered Cr2Ge2Te6

Weizhuang Zhuo,Bin Lei,Shuang Wu,Fanghang Yu,Changsheng Zhu,Jianhua Cui,Zeliang Sun,Donghui Ma,Mengzhu Shi,Honghui Wang,Wenxiang Wang,Tao Wu,Jianjun Ying,Shiwei Wu,Zhenyu Wang,Xianhui Chen

The discovery of magnetism in 2D materials offers new opportunities for exploring novel quantum states and developing spintronic devices. In this work, using field-effect transistors with solid ion conductors as the gate dielectric (SIC-FETs), we have observed a significant enhancement of ferromagnetism associated with magnetic easy-axis switching in few-layered Cr 2 Ge 2 Te 6 . The easy axis of the magnetization, inferred from the anisotropic magnetoresistance, can be uniformly tuned from the out-of-plane direction to an in-plane direction by electric field in the few-layered Cr 2 Ge 2 Te 6 . Additionally, the Curie temperature, obtained from both the Hall resistance and magnetoresistance measurements, increases from 65 to 180 K in the few-layered sample by electric gating. Moreover, the surface of the sample is fully exposed in the SIC-FET device configuration, making further heterostructure-engineering possible. This work offers an excellent platform for realizing electrically controlled quantum phenomena in a single device.

研究领域: 凝聚态物理 · 材料科学 · 纳米科技 · 自旋电子学 · 量子材料
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NATURE MATERIALS · 2025 ·Vol. 24 ·期 11 ·1716-1725 · IF 38.5

Near-100% spontaneous rolling up of polar van der Waals materials

Zhang Zhi,Zhang Yuwei,Lu Kangjun,Zhang Jun-Jie,Zhang Nannan,Feng Rui,Ye Haoran,Zhou Xiaoli,Li Linglong,Wan Dongyang,Lu Junpeng,Ni Zhenhua,Wang Jinlan,Chen Qian,Lu Jiong,Li Zejun

Rolling two-dimensional materials into one-dimensional nanoscrolls introduces curvature, chirality and symmetry breaking, enabling emergent properties. Conventional methods relying on external driving forces, however, exhibit poor control, low yield and limited reproducibility. Here we report spontaneous scrolling in polar van der Waals materials via an electrochemical intercalation/exfoliation process, enabling scalable nanoscroll production. This self-rolling is driven intrinsically by out-of-plane electric polarization ( P ⊥ ), where the magnitude of P ⊥ is modulated by the intercalant size. Validated across eight polar materials, this approach achieves virtually 100% yield and reproducibility with defined scrolling direction, surpassing external driving force limitations. The nanoscrolls exhibit layer-independent inversion symmetry breaking and coherently enhanced second-harmonic generation, exceeding two-dimensional flakes by ~100-fold and rivalling leading two-dimensional nonlinear materials. Electrochemical initiation further facilitates metal-ion co-intercalation, yielding ten hybrid nanoscroll architectures. These findings establish a scalable route to create one-dimensional nanostructures and hybrid heterostructures, paving the way for designer quantum solids and van der Waals superlattices in quantum nanodevices.

研究领域: 材料科学 · 纳米技术 · 凝聚态物理 · 非线性光学 · 量子材料
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NATURE · 2024 ·Vol. 632 ·期 8027 ·1032-1037 · IF 50.5

Superconductivity under pressure in a chromium-based kagome metal

Liu Yi,Liu Zi-Yi,Bao Jin-Ke,Yang Peng-Tao,Ji Liang-Wen,Wu Si-Qi,Shen Qin-Xin,Luo Jun,Yang Jie,Liu Ji-Yong,Xu Chen-Chao,Yang Wu-Zhang,Chai Wan-Li,Lu Jia-Yi,Liu Chang-Chao,Wang Bo-Sen,Jiang Hao,Tao Qian,Ren Zhi,Xu Xiao-Feng,Cao Chao,Xu Zhu-An,Zhou Rui,Cheng Jin-Guang,Cao Guang-Han

Superconductivity in a highly correlated kagome system has been theoretically proposed for years (refs.  1 , 2 , 3 , 4 , 5 ), yet the experimental realization is hard to achieve 6 , 7 . The recently discovered vanadium-based kagome materials 8 , which exhibit both superconductivity 9 , 10 , 11 and charge-density-wave orders 12 , 13 , 14 , are nonmagnetic 8 , 9 and weakly correlated 15 , 16 . Thus these materials are unlikely to host the exotic superconductivity theoretically proposed. Here we report the discovery of a chromium-based kagome metal, CsCr 3 Sb 5 , which is contrastingly featured with strong electron correlations, frustrated magnetism and characteristic flat bands close to the Fermi level. Under ambient pressure, this kagome metal undergoes a concurrent structural and magnetic phase transition at 55 K, with a stripe-like 4 a 0 structural modulation. At high pressure, the phase transition evolves into two transitions, possibly associated with charge-density-wave and antiferromagnetic spin-density-wave orderings. These density-wave-like orders are gradually suppressed with pressure and, remarkably, a superconducting dome emerges at 3.65–8.0 GPa. The maximum of the superconducting transition temperature, T c max  = 6.4 K, appears when the density-wave-like orders are completely suppressed at 4.2 GPa, and the normal state exhibits a non-Fermi-liquid behaviour, reminiscent of unconventional superconductivity and quantum criticality in iron-based superconductors 17 , 18 . Our work offers an unprecedented platform for investigating superconductivity in correlated kagome systems.

研究领域: 凝聚态物理 · 强关联电子系统 · 超导物理 · 量子材料
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NATURE · 2023 ·Vol. 617 ·期 7961 ·488-492 · IF 64.8

Nodeless electron pairing in CsV3Sb5-derived kagome superconductors

Zhong Yigui,Liu Jinjin,Wu Xianxin,Guguchia Zurab,Yin J.-X.,Mine Akifumi,Li Yongkai,Najafzadeh Sahand,Das Debarchan,Mielke Charles,Khasanov Rustem,Luetkens Hubertus,Suzuki Takeshi,Liu Kecheng,Han Xinloong,Kondo Takeshi,Hu Jiangping,Shin Shik,Wang Zhiwei,Shi Xun,Yao Yugui,Okazaki Kozo

The newly discovered kagome superconductors represent a promising platform for investigating the interplay between band topology, electronic order and lattice geometry 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 . Despite extensive research efforts on this system, the nature of the superconducting ground state remains elusive 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 . In particular, consensus on the electron pairing symmetry has not been achieved so far 18 , 19 , 20 , in part owing to the lack of a momentum-resolved measurement of the superconducting gap structure. Here we report the direct observation of a nodeless, nearly isotropic and orbital-independent superconducting gap in the momentum space of two exemplary CsV 3 Sb 5 -derived kagome superconductors—Cs(V 0.93 Nb 0.07 ) 3 Sb 5 and Cs(V 0.86 Ta 0.14 ) 3 Sb 5 —using ultrahigh-resolution and low-temperature angle-resolved photoemission spectroscopy. Remarkably, such a gap structure is robust to the appearance or absence of charge order in the normal state, tuned by isovalent Nb/Ta substitutions of V. Our comprehensive characterizations of the superconducting gap provide indispensable information on the electron pairing symmetry of kagome superconductors, and advance our understanding of the superconductivity and intertwined electronic orders in quantum materials.

研究领域: 凝聚态物理 · 超导物理 · 电子结构 · 量子材料
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NATURE · 2023 ·Vol. 614 ·期 7946 ·75-80 · IF 64.8

Pseudospin-selective Floquet band engineering in black phosphorus

Zhou Shaohua,Bao Changhua,Fan Benshu,Zhou Hui,Gao Qixuan,Zhong Haoyuan,Lin Tianyun,Liu Hang,Yu Pu,Tang Peizhe,Meng Sheng,Duan Wenhui,Zhou Shuyun

Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials 1 , 2 , 3 , cold atoms 4 and photonic systems 5 through hybridization with photon-dressed Floquet states 6 in the strong-coupling limit, dubbed Floquet engineering. Such interaction leads to tailored properties of quantum materials 7 , 8 , 9 , 10 , 11 , for example, modifications of the topological properties of Dirac materials 12 , 13 and modulation of the optical response 14 , 15 , 16 . Despite extensive research interests over the past decade 3 , 8 , 17 , 18 , 19 , 20 , there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, on the basis of time and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor, black phosphorus. On near-resonance pumping at a photon energy of 340–440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favouring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquetband engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.

研究领域: 凝聚态物理 · 量子材料 · 超快光谱学 · 光子学 · 固体物理学
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ACS Nano · 2025 · IF 16

Ultrabroadband Photosensitivity and Frequency-Mixing in Anisotropic Weyl Semimetal NbNiTe2

Shiqi Lan,Liu Yang,Shi Zhang,Shijian Tian,Xun Ge,Kaixuan Zhang,Li Han,Dong Wang,Mengjie Jiang,Libo Zhang,Yichong Zhang,Xiaokai Pan,Yingdong Wei,Xiaoshuang Chen,Huaizhong Xing,Cheng Guo,Xiaofang Wang,Kai Zhang,Lin Wang

Broadband anisotropic photodetectors show great promise for polarization-sensitive imaging and multispectral optoelectronic systems yet face critical challenges in material anisotropy modulation and broadband sensitivity. Weyl semimetals exhibit giant optical anisotropy and tunable heterojunction band alignment, enabling high-performance anisotropic photodetection. Herein, ultrabroadband PDs based on the NbNiTe2 (niobium nickel telluride), enabled by antenna integration and heterostructure engineering, achieve high sensitivity from visible to Terahertz (THz). Leveraging its topological quantum material properties and antenna integration, NbNiTe2-based PDs demonstrate high responsivity of 5.86 A/W and fast response time of 0.83 μs in the THz regime. Combined with the nonlinear property of the NbNiTe2-based PDs, a heterodyne experiment is developed, demonstrating their potential for multifrequency THz signal detection and applicability in complex signal processing. The NbNiTe2/MoS2 heterostructure engineered PDs exhibit a remarkably specific detectivity (D*) ranging from 1.37 × 1011 to 4.08 × 1011 cm·Hz0.5·W–1 and broad spectral response covering visible to near-infrared (NIR) wavelengths. Meanwhile, these NbNiTe2-based PDs exhibit significant anisotropic properties, a high electrical conductivity anisotropy ratio of 16.9 and an ultrahigh anisotropy ratio of 5.74. These findings can provide a viable pathway for next-generation room-temperature broadband PDs with high sensitivity and anisotropy.

CAS / MDL: 7440-03-1
研究领域: 凝聚态物理 · 光电子学 · 纳米技术 · 量子材料 · 太赫兹技术 · 材料科学
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