With tunable emission in the full visible region, the ecofriendly InP quantum dots (QDs) show unique application prospects in light-emitting devices. At present, InP QDs suffer from wide-bandwidth emission, especially for electroluminescence (EL), which hinders their applications in high-performance display devices. Here, we report a facile one-pot synthesis of narrow-bandwidth InP/ZnSeS/ZnS QDs using a safe phosphorus source of tris(dimethylamino)phosphine, in which the ZnSeS inner-shell layer is formed via temperature-gradient solution growth from 240 to 280 °C. The synthesized green QDs have a high photoluminescence quantum yield (PLQY) of 91% and full width at half-maximum (fwhm) of 36 nm. Moreover, the resultant quantum dot light-emitting devices (QLEDs) also show a narrow fwhm of 42 nm, which is the narrowest emission of green InP QLEDs based on a safe phosphorus source reported so far. Further modulation of the electron injection into the device by inserting a thin layer of lithium fluoride results in a peak external quantum efficiency of 5.56%.
Quantum dot light-emitting devices (QLEDs) exhibit unique advantages for high-resolution display applications. However, as pixel size decreases, challenges including insufficient hole injection and leakage current become increasingly pronounced, resulting in significant degradation in device performance. Herein, dual hole injection layers are constructed by self-assembly of an organic small molecular layer on conventional PEDOT:PSS to smooth the potential barrier, thus achieving more balanced carrier injection. An ultrafine inter-pixel isolation structure is designed as a charge blocking layer surrounding the photolithograpic pixels, with the purpose of effectively mitigating leakage current in the non-emitting region. The high-resolution devices show a high external quantum efficiency (EQE) of 19.6 % and a peak power efficiency (PE) of 20.63 lm/W, both of which significantly exceed the performance of the control device (EQE = 14.6 %, PE = 10.54 lm/W).
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