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JOURNAL OF COLLOID AND INTERFACE SCIENCE · 2024 · IF 9.4

Revealing oxygen effect on efficiency and stability of quantum dot photovoltaics

Xiangshan Chen,Hao Li,Lei Wang,Zihan Wang,Shuai Liu,Guodong Li,Chao Wang,Xiaofei Li,Hancheng Zhu,Yinglin Wang,Xintong Zhang,Yichun Liu

Colloidal quantum dot solar cells (CQDSCs) have received great attention in the development of scalable and stable photovoltaic devices . Despite the high power-conversion-efficiency (PCE) reported, stability investigations are still limited and the exact degradation mechanisms of CQDSCs remain unclear under different atmosphere conditions. In this study, the atmospheric influence on the ZnO electron transport layer material (ETL), halide-passivated lead sulfide CQDs (PbS-PbI 2 ) photoactive layer material and 1,2-ethanedithiol-PbS CQDs (PbS-EDT) hole transport material on device stability in PbS CQDSCs is investigated. It was found that O 2 had negligible influence on PbS-PbI 2 , but it did induce the increase in work function of ZnO ETL and PbS-EDT layers. Notably, the increase of the ZnO work function (WF ZnO ) induces the formation of interface barrier between ZnO and PbS-PbI 2 , leading to a deterioration in device efficiency . By further replacing ZnO ETL with SnO 2 , a multi-interface collaborative CQDSC was constructed to realize the PCE with high stability. This study identifies the efficiency evolution that is inherent in CQDSCs under different atmospheric conditions.

研究领域: 材料科学 · 光伏技术 · 能源研究
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JOURNAL OF COLLOID AND INTERFACE SCIENCE · 2022 · IF 9.965

Improving the photovoltaic performance for PbS QD thin film solar cells through interface engineering

Yiting Yang,Zhengdan Rao,Qien Xu,Yongqi Liang,Lin Yang

Interfaces exist between functional layers inside thin film optoelectronic devices, and it is very important to minimize the energy loss when electrons move across the interfaces to improve the photovoltaic performance. For PbS quantum dots (QDs) solar cells with the classical n-i-p device architecture, it is particularly challenging to tune the electron transfer process due to limited material choices for each functional layer. Here, we introduce materials to tune the electron transfer across the three interfaces inside the PbS-QD solar cell: (1) the interface between the ZnO electron transport layer and the n-type iodide capped PbS QD layer (PbS-I QD layer), (2) the interface between the n-type PbS-I layer and the p-type 1,2-ethanedithiol (EDT) treated PbS QD layer (PbS-EDT QD layer), (3) the interface between the PbS-EDT layer and the Au electrode. After passivating the ZnO layer through APTES treating; tuning the band alignment through varying the QD size of PbS -EDT QD layer and a carbazole layer to tune the hole transport process, a power conversion efficiency of 9.23% (V oc of 0.62 V) under simulated AM1.5 sunlight is demonstrated for PbS QD solar cells. Our results highlights the profound influence of interface engineering on the electron transfer inside the PbS QD solar cells, exemplified by its impact on the photovoltaic performance of PbS QD devices.

研究领域: 材料科学 · 光伏技术 · 纳米技术
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SOLAR ENERGY MATERIALS AND SOLAR CELLS · 2017 · IF 4.784

Fabrication of efficient PbS colloidal quantum dot solar cell with low temperature sputter-deposited ZnO electron transport layer

Shuaipu Zang,Yinglin Wang,Meiying Li,Wei Su,Hancheng Zhu,Xintong Zhang,Yichun Liu

Preparation of electron transport layer (ETL) with high uniformity by convenient and low-temperature process is of essential importance for the future development of colloidal quantum dot solar cells (CQDSCs) into large-area and flexible devices. Herein we utilized magnetron sputtering technique to deposit ZnO thin film as the ETL of PbS CQDSCs. The ZnO film deposited at ambient temperature displayed preferential growth along (001) direction, pinhole free morphology, and good optical transmittance . On rigid SnO 2 :F (FTO) conductive glass substrates , PbS CQDSCs with sputtered ZnO ETL achieved a power conversion efficiency of 6.47% under AM 1.5   G simulated solar irradiation , which was higher than the 6.02% efficiency of the CQDSC fabricated on the benchmarked ZnO nanocrystals ETL. The good uniformity of sputtered ZnO film also facilitated the consistency of photovoltaic parameters of big-sized CQDSCs, as demonstrated by the similar output of four series-connected CQDSC units fabricated in one batch with a total active area of 14.4   cm 2 . Flexible PbS CQDSCs was also fabricated on the sputtered ZnO ETL, using In 2 O 3 :Sn-coated polyethylene terephthalate (ITO-PET) as the substrate, which achieved a power conversion efficiency of 3.87% and displayed negligible decline of the photovoltaic parameters after 100-time bending treatment. Our research demonstrates that the magnetron-sputtered ZnO film, with favorable features of low-temperature process, large-area continuity, and high bending tolerance, presents promising potential for the future development of PbS CQDSCs.

研究领域: 材料科学 · 能源技术
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DALTON TRANSACTIONS · 2018 ·Vol. 47 ·期 29 ·9634-9642 · IF 4.099

Impacts of Mn ion in ZnSe passivation on electronic band structure for high efficiency CdS/CdSe quantum dot solar cells

Shuqi Lu,Shanglong Peng,Zhiya Zhang,Yunlong Deng,Tianfeng Qin,Juanjuan Huang,Fei Ma,Juan Hou,Guozhong Cao

Surface passivation in quantum dot-sensitized solar cells (QDSSCs) plays a very important role in preventing surface charge recombination and thus enhancing the power conversion efficiency (PCE). ZnSe passivation with dopant in CdS/CdSe co-sensitized QDSSCs has been demonstrated as an effective way to improve the PCE. In the present study, a series of characterizations revealed that a Mn-doped ZnSe passivation layer can not only reduce surface charge recombination, but also enhance light harvesting. By means of density functional theory calculation along with a systematic study of electronic band structure, it has been found that the valence band of ZnSe moves upward on Mn-ion doping which leads to acceleration of charge separation and broader light absorption range. The impact of the Mn ion on charge recombination and light harvesting has been interpreted reasonably and the PCE of CdS/CdSe co-sensitized QDSSCs with Mn-doped ZnSe passivation layer is as high as 6.46%, which is 1.5 times that of the solar cell without the passivation layer.

研究领域: 材料科学 · 能源科学 · 计算化学
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ACS Applied Materials & Interfaces · 2023 · IF 9.5

Reducing the Open-Circuit Voltage Loss of PbS Quantum Dot Solar Cells via Hybrid Ligand Exchange Treatment

Tengzuo Huang,Chunyan Wu,Jinpeng Yang,Pengyu Hu,Lei Qian,Tao Sun,Chaoyu Xiang

The interface VOC loss between the active layer and the hole transport layer (HTL) of lead sulfide colloidal quantum dot (PbS-CQD) solar cells is a significant factor influencing the efficiency improvement of PbS colloidal quantum dot solar cells (PbS-CQDSCs). Currently, the most advanced solar cells adopt organic P-type HTLs (PbS-EDT) via solid-state ligand exchange with 1,2-ethanedithiol (EDT) on the CQD top active layer. However, EDT is unable to altogether remove the initial ligand oleic acid from the quantum dot surface, and its high reactivity leads to cracks in the HTL film caused by volume contractions, which inevitably results in significant VOC loss. These flaws prompted this research to develop a method involving hybrid organic ligand exchange using 3-mercaptopropionic acid (MPA) and 1,2-EDT (PbS-Hybrid) to overcome these drawbacks of VOC loss. The results indicated that the new exchange strategy improved the quality of the HTL film and benefited from the enhanced passivation of the quantum dot surface and better alignment of energy levels, and the average VOC of PbS-Hybrid devices is increased by approximately 25 mV compared to control devices. With the enhanced VOC, the average power conversion efficiency (PCE) of the devices is improved by 10%, with the highest PCE reaching 13.24%.

研究领域: 材料科学 · 能源技术
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Amino Acid Double-Passivation-Enhanced Quantum Dot Coupling for High-Efficiency FAPbI3 Perovskite Quantum Dot Solar Cells

Meidan Que,Hao Yuan,Qizhao Wu,Shenghui He,Peng Zhong,Bo Li

Formamidinium lead triiodide (FAPbI3) perovskite quantum dot has outstanding durability, reasonable carrier lifetime, and long carrier diffusion length for a new generation of highly efficient solar cells. However, ligand engineering is a dilemma because of the highly ionized and dynamic characteristics of quantum dots. To circumvent this issue, herein, we employed a mild solution-phase ligand-exchange approach through adding short-chain amino acids that contain amino and carboxyl groups to modify quantum dots and passivate their surface defects during the purification process. As a result, the photoelectric conversion efficiency of FAPbI3 perovskite quantum dot solar cells (PQDSCs) increased from 11.23 to 12.97% with an open-circuit voltage of 1.09 V, a short-circuit current density of 16.37 mA cm–2, and a filling factor of 72.13%. Furthermore, the stability of the device modified by amino acids retains over 80% of the initial efficiency upon being exposed to 20–30% relative humidity for 240 h of aging treatment. This work may offer an innovative concept and approach for surface ligand treatment to improve the photovoltaic performance of PQDSCs toward large-scale manufacture.

研究领域: 材料科学 · 纳米技术 · 太阳能 · 光伏技术
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Journal of Physical Chemistry C · 2017 · IF 4.536

Impacts of Reduced Graphene Oxide in CdS/CdSe Quantum Dots Co-sensitized Solar Cells

Qiang Wu,Haifeng Zhao,Fei Huang,Juan Hou,Haibin Cao,Zhiyong Liu,Shanglong Peng,Guozhong Cao

The introduction of various amounts of reduced graphene oxide (RGO) to CdS/CdSe quantum dots co-sensitized solar cells was investigated to enhance the light absorption and to promote the electron transfer. The characterization and comparison of optical and electrochemical properties as well as the performance of the resultant quantum dot-sensitized solar cells (QDSCs) with different amounts of RGO have been investigated systematically. The introduction of RGO demonstrated to enhance the light harvesting and consequently increase the short-circuit current density (Jsc). ZnS inserting between QDs and RGO can effectively block the charge recombination at the interface; however, the defects of RGO in the TiO2/QDs/ZnS/RGO photoanode still may accelerate the interface charge recombination in QDSCs and lead to a slight decrease of the open-circuit voltage (Voc). The balance between the light harvesting and charge recombination in RGO modified QDSCs is a key for achieving high power conversion efficiency (PCE). Finally, the CdS/CdSe/ZnS co-sensitized cell with modification RGO (3 min) achieved a high PCE of 5.28% (Jsc = 15.8 mA/cm2, Voc = 572 mV), more than 13% higher than that of 4.69% (Jsc = 13.7 mA/cm2, Voc = 602 mV) obtained for the cell without RGO.

研究领域: 光伏技术 · 纳米材料 · 量子点太阳能电池 · 能源材料
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