Titanium-based lithium-ion sieves (LISs) have attracted considerable attention because of their superior adsorption capacity and cycling stability in lithium ion extraction. In this paper, an S-doped H 2 TiO 3 -ferrite ion sieve was successfully synthesized through co-precipitation scheme. The recycling problem of lithium ion sieve powder was effectively solved by utilizing its magnetic separation property. LTSO-Ferrite was prepared in one step using a high-temperature solid-phase method, with an optimal molar ratio of FeCl 2 : TiS 2 : TiO 2 = 0.2: 0.2: 1. The adsorption capacity of S-doped H 2 TiO 3 -Ferrite (HTSO-Ferrite) reached 43.02 mg/g, and the magnetization value was 4.81 emu/g. The adsorption energy and structure of Li + on LTSO-Ferrite were determined using density functional theory (DFT) to assess the feasibility of lithium absorption. The adsorption behavior of LTSO-Ferrite toward Li + followed the Langmuir isotherm and pseudo-second-order kinetic models, indicating that the adsorption was endothermic and spontaneous. LTSO-Ferrite exhibited good selectivity for heteroatoms in simulated brine. Magnetic recovery rate remained at 98 % with an adsorption capacity of 36.16 mg/g after five cycles, which is 84 % of its maximum adsorption capacity. LTSO-Ferrite exhibited magnetic separation properties, offering a promising approach for developing lithium adsorbents for extraction from unsalted lake brine.
As a conceptually new class of two-dimensional (2D) materials, the ultrathin nanosheets as inorganic graphene analogues (IGAs) play an increasingly vital role in the new-generation electronics. However, the relatively low electrical conductivity of inorganic ultrathin nanosheets in current stage significantly hampered their conducting electrode applications in constructing nanodevices. We developed the unprecedentedly high electrical conductivity in inorganic ultrathin nanosheets. The hydric titanium disulfide (HTS) ultrathin nanosheets, as a new IGAs, exhibit the exclusively high electrical conductivity of 6.76 × 104 S/m at room temperature, which is superior to indium tin oxide (1.9 × 104 S/m), recording the best value in the solution assembled 2D thin films of both graphene (5.5 × 104 S/m) and inorganic graphene analogues (5.0 × 102 S/m). The modified hydrogen on S–Ti–S layers contributes additional electrons to the TiS2 layered frameworks, rendering the controllable electrical conductivity as well as the electron concentrations. Together with synergic advantages of the excellent mechanical flexibility, high stability, and stamp-transferrable properties, the HTS thin films show promising capability for being the next generation conducting electrode material in the nanodevice fields.
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