Ceramic/polymer composites have great potential to achieve the concomitant enhancement of both dielectric constant and breakdown field while maintaining other superior properties of the polymer matrix , ideal for elastomer sensors, actuators, capacitive energy storage, and many other applications. However, material incompatibility between the ceramic filler and the polymer matrix often leads to void formation , particle aggregation and phase separation, with significantly degraded performance. Herein, through surface modification, co-doped TiO 2 particles were uniformly dispersed and bridged onto the silicone rubber matrix via a silane coupling agent for fabricating composites via mechanical mixing and hot-pressing. The synthesized composites exhibit enhanced dielectric constant, increased from 2.78 to 5.06 when 50 wt% co-doped TiO 2 particles are incorporated. Their dielectric loss is less than 0.001 in a broad frequency range. Theoretical modelling and experimental results reveal that the morphology and dispersion state of co-doped TiO 2 particles were crucial to the dielectric properties of the silicone rubber-based composites. Besides, the composites are thermally stable up to 400 °C. Significantly increased tensile strength (612 kPa) and elongation at break (330%) were obtained for the composite incorporated with 30 wt% co-doped TiO 2 particles, accompanied by a moderate increased elastic module (540 kPa). Such composites have the potential for different applications.
In this work, novel 2D type-II p-n heterojunctions La 2 Ti 2 O 7 /In 2 S 3 have been fabricated. The heterojunctions exhibit much improved photocatalytic activity over individual moieties and their physical mixtures in which 18-fold increment in hydrogen production has been achieved under visible light illumination (λ ≥ 400 nm). Their superior activities stem from intimate face-to-face contact between La 2 Ti 2 O 7 and In 2 S 3 in the heterojunctions which guarantee facile charge interchange. Photoelectrochemical analysis suggests that efficient charge separations occur at the interfaces of the heterojunctions and contributes to a prolonged charge lifetime as well as the much enhanced photocatalytic activities. Such a simple strategy by fabricating ultrathin type-II p-n heterojunctions also warrant promising applications in other areas such as optoelectronics, sensors etc. whereby efficient charge separations are needed.
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