Currently semiconductor-based near ultraviolet and ultraviolet self-powered photodetectors usually display low detectivity and responsivity due to weak photogenerated electron and hole separation ability and not suitable electrode. BaTiO 3 possesses a high depolarization electric field throughout the bulk and wide band gap (> 3 eV), and hence is a good candidate for fabricating near-ultraviolet and ultraviolet self-powered photodetectors. Cu nanowires (NWs) have been regarded as promising transparent electrode for photodetectors because they have not only equivalent optical transparency and electrical conductivity relative to Ag NWs currently in use, but also far lower cost. But, weak resistance to oxidation in the environment of light and electricity prevents large-scale use of Cu NWs in photodetectors. Herein, an organic corrosion inhibitor , benzotriazole (BTA), is used to passivate Cu NWs, and interestingly, the passivated NW networks exhibit significantly increased resistance to oxidation. At zero field, the BaTiO 3 photodetector coated with Cu@BTA NWs exhibits stable photocurrent, high responsibility of 6.45 × 10 −7 A/W, large detectivity of 1.97 × 10 8 Jones, and fast response rate (rise and decay time being 28.8 ms and 37.2 ms, respectively) at the wavelength of 405 nm, which is far better than indium-tin-oxide electrode-coated BaTiO 3 photodetector. This work provides a strong guideline for large-scale fabrication of low-cost and high-stability transparent electrodes applicable in near-ultraviolet and ultraviolet photoelectric devices.
Ferroelectric organic field-effect transistor (Fe-OFET) memory devices exhibit low power consumption, low cost and good flexibility, which are indispensable to next generation flexible and wearable memory devices. However, up until the present, the ferroelectric materials used in Fe-OFETs have been limited to ferroelectric polymers, i.e. poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)], and suffer from large surface roughness and high-risk of depolarization. This work integrates a new two-dimensional CuInP 2 S 6 crystal into Fe-OFET, which can introduce excellent ferroelectric property due to its single crystalline smoothness and noncentrosymmetric crystal structure. Meanwhile, the high-mobility rubrene crystal is selected as the channel material to construct rubrene/CuInP 2 S 6 organic/inorganic van der Waals heterojunctions . Associated with synergetic effect of single-crystalline nature of the heterojunction and atomically flat/defect-free interface, the memory devices possess a high programming speed of 0.5 s and long retention time of 10 4 s with a current ratio larger than 10 3 . Furthermore, the performance of flexible devices is also demonstrated, including a programming/erase cycle of 1000 with a current on/off ratio approaching 10 3 , data retention time of 10 4 s with a current on/off ratio of 10 3 and a current on/off ratio maintained at 10 2 even after 100 bending cycles under a bending radius of 25 mm, which are qualified for memory buffer usage or short-term data storage especially when they are integrated with other flexible electronics. The proposed configuration of memory transistors using organic/inorganic heterojunctions provides a rational design of device structure toward flexible Fe-OFET non-volatile memory applications.
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