The gallium (Ga) base liquid metal (LM) with high thermal conductivity and deformability is applied widely in thermal management in electrical systems. However, Ga readily reacts with Cu to form intermetallic compounds (IMCs), which can cause failure in electronic devices. Herein, the thermal interface material (TIM) with Ga and diamond is prepared to analyze the reaction behavior of TIM and Cu/Ni-plated Cu under an aging test at 125 °C. The results show that Ga reacts with Cu substrate and forms CuGa 2 bulk. Moreover, Ni coating can inhibit the corrosion of Ga and Cu. However, the as-volcano IMC structures were generated, also. The thermal resistance increased from 2.24 mm 2 ·K·W −1 to 14.47 mm 2 ·K·W −1 from initial time to 200 h. The interfacial corrosion behavior between TIM and Cu substrate is studied by first-principles molecular dynamics simulation. The diffusion coefficient in the z direction of Cu is 0.04 × 10 −5 cm 2 /s. In a word, the work could provide the guidelines for the further design of high-performance corrosion resistance in the region where Ga was used for thermal management on electronic products.
Haojie Xing,Bin He,Stephan Handschuh-Wang,Xinqing Gao,Junrong Zeng,Zongyan Zhang,Qiyuan Chen,Jiangtao Huang,Peigang Han
The integration of diamond films onto copper substrates offers significant potential for thermal management in high-power electronics, leveraging diamond's exceptional thermal conductivity and electrical insulation. However, substantial challenges arise from the significant thermal expansion coefficient (CTE) mismatch, leading to substrate warping and film cracking. This study establishes a critical substrate thickness effect through systematic experiments: Single-side nanocrystalline diamond (NCD) deposited on thin copper substrates (0.5 mm) exhibits severe warping (curvature radius: 55.53 mm) but maintains film integrity, whereas identical deposition on thick copper (1.5 mm) reduces warping (radius: 219.4 mm) yet induces extensive cracking due to amplified compressive stress. To overcome this trade-off, we develop a dual-side heterogeneous deposition strategy: NCD grown at low temperature (700 °C) on one side provides strain accommodation, while subsequent microcrystalline diamond (MCD) deposition on the opposite side achieves stress cancellation. This approach simultaneously resolves both failure modes---increasing the warpage radius to 395.03 mm (an increase of 711 % compared to single-side deposition) while ensuring crack-free integrity in both 5 μm thick deposited films. The underlying mechanisms involve: (1) Gradual stress decay through a gradient interfacial architecture (amorphous carbon layer - nanocrystalline buffer - microcrystalline main layer); (2) Enhanced adhesion via mechanical interlocking induced by substrate pretreatment; (3) Plastic deformation at the interface absorbing residual strain. Thermal testing confirms hot-end temperature reductions of 7.7 °C and 42.2 °C compared to AlN and Al₂O₃, respectively, at 6 W power, validating superior heat dissipation. This work provides an electrically insulating diamond‑copper composite with high thermal conductivity for next-generation thermal management solutions.
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