INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
·
2014
·Vol. 15
·期 4
·6412-6422
·
IF 2.339
Jiushuai Xu,Ruibin Fan,Jiaolong Wang,Mengke Jia,Xuanrui Xiong,Fang Wang
Copper films were grown on (3-Mercaptopropyl)trimethoxysilane (MPTMS), (3-Aminopropyl)triethoxysilane (APTES) and 6-(3-(triethoxysilyl)propylamino)-1,3,5- triazine-2,4-dithiol monosodium (TES) self-assembled monolayers (SAMs) modified acrylonitrile-butadiene-styrene (ABS) substrate via electroless copper plating. The copper films were examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD). Their individual deposition rate and contact angle were also investigated to compare the properties of SAMs and electroless copper films. The results indicated that the formation of copper nuclei on the TES-SAMs modified ABS substrate was faster than those on the MPTMS-SAMs and APTES-SAMs modified ABS substrate. SEM images revealed that the copper film on TES-SAM modified ABS substrate was smooth and uniform, and the density of copper nuclei was much higher. Compared with that of TES-SAMs modified resin, the coverage of copper nuclei on MPTMS and APTES modified ABS substrate was very limited and the copper particle size was too big. The adhesion property test demonstrated that all the SAMs enhanced the interfacial interaction between copper plating and ABS substrate. XRD analysis showed that the copper film deposited on SAM-modified ABS substrate had a structure with Cu(111) preferred orientation, and the copper film deposited on TES-SAMs modified ABS substrate is better than that deposited on MPTMS-SAMs or APTES-SAMs modified ABS resins in electromigrtion resistance.Keywords:ABS resin;SAMs;electroless copper film;heterocyclic silane
研究领域:
材料科学
·
化学工程
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产品关联
DOI
PubMed
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2022
·
IF 4.644
Nengyuan Zeng,Yuling Liu,Yuanshen Cheng,Chong Luo,Hongdong Zhao
The efficient copper removal of the in the multi-layer copper interconnect copper film chemical mechanical planarization (CMP) process is one of the important indicators for high production efficiency of integrated circuit process. The chemical corrosiveness of polishing slurries to copper is the key factor affecting the copper removal rate. Since the copper polishing slurries are relied too much on the synergistic effect of complexing agent and oxidant for the copper chemical dissolution to achieve efficient removal of copper film, the planarization and corrosion of copper CMP cannot be well improved. In this paper, it was found that adding potassium sulfate (K 2 SO 4 ) in polishing slurries can improve the copper removal effect of CMP. In this paper, the mechanism of the effect enhancement of K 2 SO 4 was explored with series of characterization experiments. Firstly, the influence of K 2 SO 4 on the increase of electrochemical corrosion degree of copper electrode was studied by electrochemical method. Secondly, based on X-ray photoelectron spectroscopy (XPS) and laser scanning confocal microscope (LSCM), it was determined that the copper surface oxide formation increased after electrochemical corrosion caused by K 2 SO 4 . Finally, the efficiency of copper polishing removal of K 2 SO 4 in polishing slurries was verified by CMP experiments, and the dynamic oxidation enhancement mechanism of K 2 SO 4 in polishing slurries for CMP copper removal was analyzed.
研究领域:
材料科学
·
化学工程
✓ 已验证
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DOI
高影响因子
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
·
2016
·Vol. 163
·期 9
·D469
·
IF 3.014
C. Yang,Q. B. Zhang,M. Y. Gao,Y. X. Hua,C. Y. Xu
We reported a facile strategy to fabricate three dimensional (3D) hierarchical nanoporous Cu films via simple in-situ electrochemical alloying/dealloying approach in a choline chloride-ethylene glycol (ethaline) deep eutectic solvent (DES) containing zinc chloride. The fabrication process involved electrochemical formation of Cu-Zn surface alloys (alloying), and followed by in-situ selective etching of the active zinc element from the alloys (dealloying). Compared with those exerted from choline chloride-urea (reline) based DES, the resultant nanoporous Cu (NPC) films obtained in ethaline exhibited a hierarchical porous architecture with a tailorable channel/pore size distribution. The evolution of nanoporosity was found to be highly temperature and time dependent, suggesting a thermal activation process controlled by surface diffusion. For kinetics investigation, the surface diffusivities of self-assembled copper atoms at the hierarchical layers, and their corresponding activation energies have been evaluated. The as-prepared NPC showed a significant catalytic activity for reduction of nitrate with a linear detection range of 10–100 μM. A fairly high nitrate sensitivity of 3415 μA mM−1 cm−2 coupled with a low detection limit of 1.92 μM is achieved.
研究领域:
材料科学
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电化学
·
环境科学
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DOI
高影响因子
IEEE Transactions on Components Packaging and Manufacturing Technology
·
2024
·Vol. 14
·期 7
·1149-1155
·
IF 2.3
Mingming Yi,Wenhui Zhu,Ping Wu,Yiou Qiu,Guoliao Sun,Liancheng Wang
Copper-based conductive inks have been extensively researched due to their low sintering temperature and high anti-oxidation properties for various electrical devices. However, the unstable oxidation properties of copper (Cu) limit its practical application. The existing anti-oxidation methods adopted in copper sintering often reduce copper strength and reliability. Therefore, the study presents a novel copper composite ink comprising copper precursors, copper microparticles, organic protective agents, and antioxidants. The sintering process is simple, requiring only 20 min at
$300~^{\circ }$
C in nitrogen without any additional pressure. As a result, sintered copper with an oxidation rate of only 3.21 wt% was successfully obtained using the mixed ink of copper particles and precursors. The porosity of the sintered copper is 10.69%, which is a 71.77% reduction compared to the copper sintered by using pure copper precursor ink, due to the synergistic effect. Furthermore, the study discusses and analyzes the lattice growth mechanism and synergy mechanism of copper particles and their precursors during copper sintering.
研究领域:
材料科学
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电气工程
·
化学工程
✓ 已验证
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2025
·
IF 4.6
Zheng Wu,Changxin Dong,Xinhuan Niu,Jiakai Zhou,Chao He,Xinjie Li,Bin Hu,Jiahui Li
As technology nodes shrink below 10 nm, stricter demands are required for the one-step polishing of copper (Cu) films in ruthenium (Ru)-based Cu interconnects: a high Cu removal rate (RR) and a near-zero Ru RR. In this work, an eco-friendly slurry was newly formulated by combining hydroxyethylethylene diphosphonic acid (HEDP) and phytic acid (PA), both containing phosphate groups, to enhance corrosion inhibition and polishing performance during Cu/Ru CMP. Polishing and electrochemical experiments demonstrated that the synergistic inhibitors achieved a corrosion inhibition efficiency of 96 % for Cu. Under optimized conditions, the material removal rates (MRRs) of Cu and Ru reached 5432 Å/min and 10 Å/min, respectively, with a maximum removal rate selectivity (RRS) of 543:1 and surface roughness ( Sqs ) of 0.76 nm and 0.53 nm. Contact angle, coefficient of friction (COF), Ultraviolet–visible spectroscopy (UV–Vis), X-ray photoelectron spectroscopy (XPS) analyses confirmed the formation of a protective passivation film on Cu/Ru surfaces from both mechanical and chemical perspectives. Theoretical calculations identified the reactive sites of the inhibitors and simulated their adsorption behavior in a CMP environment, revealing that the synergistic inhibitors exhibited the highest adsorption energy. Without the use of surfactants, the multifunctional synergistic inhibitors improved surface quality through lubrication and passivation effects while reducing reagent consumption. This work provides both theoretical and practical guidance for the design of green and efficient CMP slurries in advanced semiconductor manufacturing.
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DOI
高影响因子
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