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SOLAR ENERGY MATERIALS AND SOLAR CELLS · 2025 · IF 6.3

Record open-circuit voltage of 0.85 V via indium-content engineering in efficient CuInS2 solar cells

Wenbo Cao,Chong Chen,Mingtai Wang

CuInS 2 is a promising light-harvesting material for solar cells due to its long-term stability, suitable bandgap and favorable optical absorption coefficient. Here, solar cells with In-rich CuInS 2 light-active layer are fabricated by increasing the feed ratio in precursor solution. The CuAu phases within chalcopyrite CuInS 2 films are inhibited with increased In molar ratio, leading to a better quality of CuInS 2 films as well as reduction in charge recombination centers in solar cells. Moreover, the band alignment of CuInS 2 /Spiro-OMeTAD interface is adjusted by increased In molar ratio, and the charge carriers are effectively separated at the CuInS 2 /Spiro-OMeTAD interface due to the lower valence band level of In-rich CuInS 2 films. These improvements result in a planar CuInS 2 solar cell with an efficiency of 7.66% and an open-circuit voltage reached 0.85 V. The In-rich CuInS 2 devices exhibit the lower voltage loss, which enhances the potential for high-efficiency solar cells.

CAS / MDL: 7681-65-4
研究领域: 材料科学 · 光伏技术
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JOURNAL OF LUMINESCENCE · 2015 · IF 2.719

Photoluminescence of indium-rich copper indium sulfide quantum dots

Wenyan Liu,Yu Zhang,Jia Zhao,Yi Feng,Dan Wang,Tieqiang Zhang,Wenzhu Gao,Hairong Chu,Jingzhi Yin,Yiding Wang,Jun Zhao,William W. Yu

The enhanced photoluminescence (PL) for In-rich copper indium sulfide quantum dots (CIS QDs) was observed. The conduction electron-Cu vacancy recombination and the donor–acceptor pair (DAP) defect recombination were considered to exist in CIS QDs at the same time. The temperature-dependent PL study showed that the emission of these QDs might be mainly originated from the recombination between electrons in the quantized conduction band and holes in the copper vacancy acceptor when x was 0.500 (Cu x In 1− x S). However, the temperature coefficient of PL peak position decreased when x was 0.237. That meant the DAP recombination increased in the In-rich CIS QDs.

研究领域: 材料科学 · 光学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2015 · IF 2.999

A high efficient photoluminescence Zn–Cu–In–S/ZnS quantum dots with long lifetime

Xin Wang,Zhurong Liang,Xueqing Xu,Nan Wang,Jun Fang,Junxia Wang,Gang Xu

Highly Cu-rich copper indium sulfide (CuInS 2 , CIS) quantum dots were synthesized utilizing copper chloride (CuCl) and indium acetate (In(Ac) 3 ) as metal cation precursors, combined with n-dodecanethiol (DDT) as a coordinating sulfur source and solvent. With excess of In(Ac) 3 , i.e. with Cu/In ratios of 1/4, together with Zn 2+ ions post-treatment, a relatively high photoluminescence quantum yield (QY) of ∼73% with long average lifetime of ∼359   ns has been obtained, which is proposed to be attributed to the Cu-rich defect states in the CIS nanocrystals (NCs) nuclei. Meanwhile, the formation of In-rich CIS–ZnS alloy, i.e. Zn–Cu–In–S (ZCIS) with high density of Cu vacancies, combined with the surface passivation of ZnS overlay resulted in a high QY. Finally, the formation mechanism of the ZCIS/ZnS with Cu-rich nuclei has been proposed.

研究领域: 材料科学 · 纳米技术
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CHEMISTRY OF MATERIALS · 2013 · IF 8.238

Spinel Indium Sulfide Precursor for the Phase-Selective Synthesis of Cu–In–S Nanocrystals with Zinc-Blende, Wurtzite, and Spinel Structures

Shuijin Lei,Chunying Wang,Lei Liu,Donghai Guo,Chuanning Wang,Qingliu Tang,Baochang Cheng,Yanhe Xiao,Lang Zhou

Group I–III–VI ternary chalcogenides have attracted extensive attention as important functional semiconductors. Among them, Cu–In–S compounds have seen strong research interest due to their potential applications in high-efficiency solar cells. However, the controllable synthesis of Cu–In–S nanostructures with different phases is always difficult. In this research, zinc-blende CuInS2, wurtzite CuInS2, and spinel CuIn5S8 could be selectively synthesized using spinel In3–xS4 as the precursor by a simple solvothermal method. X-ray powder diffraction was used to determine the phase and crystal structure, and transmission electron microscopy was employed to characterize the morphologies of the as-prepared samples. Experiments showed that the acidity–basicity of the reaction system and the coordination and reducibility of the capping ligands were crucial to the final phases of the products. The UV–vis–NIR spectra of the three phases all exhibited a broad-band absorption over the entire visible light and extending into the near-infrared region, and the zinc-blende, wurtzite, and spinel Cu–In–S nanocrystals showed band gaps of 1.55, 1.54, and 1.51 eV, respectively, which indicates their potential applications in thin-film solar cells.

CAS / MDL: 112-90-3
研究领域: 材料科学 · 半导体物理 · 纳米技术
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JOURNAL OF ELECTRONIC MATERIALS · 2018 ·Vol. 48 ·期 1 ·286-295 · IF 1.566

Dependence of the Photoluminescence of Hydrophilic CuInS2 Colloidal Quantum Dots on Cu-to-In Molar Ratios

Zhang Chi,Xia Yong,Lian Linyuan,Fu Xiaoming,Yin Liping,Zhang Jianbing,Luo Wei,Miao Xiangshui,Zhang Daoli

Copper indium sulfide (CIS) quantum dots (QDs) are attractive as potential optoelectronic devices, since they have large absorption coefficients across a broad spectral range, size- and composition-tunable photoluminescence from the visible to the near-infrared, and low toxicity. However, CIS QDs should be hydrophilic in certain applications. In this present work, hydrophilic CIS and CIS/ZnS colloidal QDs were synthesized by a one-pot environmentally-friendly route employing N , N -dimethylformamide (DMF) as the solvent and in situ generated H 2 S as the sulphur precursor. The effect of stoichiometry was investigated by varying the feeding molar ratios of Cu/In, which did not affect the crystalline structure of the CIS colloidal QDs, while the optical property was influenced significantly. With the decrease of the feeding molar ratios of Cu/In, the band gap of the resulting CIS colloidal QDs had blue-shifts and relative photoluminescence quantum yield of the corresponding CIS/ZnS colloidal QDs increased monotonically.

CAS / MDL: 96-27-5
研究领域: 材料科学 · 光学
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Journal of Materials Chemistry A · 2020 ·Vol. 8 ·期 19 ·9951-9962 · IF 11.301

Surface passivation enabled-structural engineering of I-III-VI2 nanocrystal photocatalysts

Yuemei Li,Jia Liu,Xiaodong Wan,Rongrong Pan,Bing Bai,Hongzhi Wang,Xingzhong Cao,Jiatao Zhang

Cation exchange has evolved into a powerful tactic for synthesis of semiconductor nanocrystals (NCs) that are not readily accessible otherwise. Here we have investigated the In3+-for-Cu+ cation exchange in the dodecahedral-shaped Cu7S4 NCs and found that surface passivation, either caused by excess guest cations or ligand molecules, can be exploited to engineer the structural properties of the NCs. By monitoring the parallel reactions carried out under systematically varied conditions, together with the positron annihilation spectroscopy investigation, we have demonstrated that the key element accounting for the observed surface passivation is associated with the copper vacant sites on the surface of Cu7S4 NCs. The reduction in In3+/Cu+ ratio and the presence of strong-binding ligands could enhance the density of surface copper vacancies and boost cation exchange reaction, which therefore alters the competition between the in-diffusion of In3+ and out-diffusion of Cu+ ions. Such capability to control the inter-diffusion balance in cation exchange (and the accompanying Kirkendall effect) enables the creation of a series of CuInS2 (and Cu7S4@CuInS2) NCs with various exotic structures, which show different photocatalytic abilities in singlet oxygen generation. This study can not only add more structural complexity and diversity to the semiconductor NCs achievable by cation exchange, but also presents an important guideline for establishing a unifying mechanistic understanding of the reaction kinetics in cation exchange process.

研究领域: 材料科学 · 化学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2020 · IF 4.65

WITHDRAWN: Low temperature synthesis of highly bright green emission CuInS2/ZnS quantum dots and its application in light-emitting diodes

Bing Deng,Yanqing Zhu,Jingling Li,Xia Chen,Kun He,Juan Yang,Kaili Qin,Zhuoneng Bi,Xiudi Xiao,Shuaijun Chen,Xueqing Xu,Gang Xu

The Publisher regrets that this article is an accidental duplication of an article that has already been published in , http://dx.doi.org/10.1016/j.jallcom.2020.155439 . The duplicate article has therefore been withdrawn. The full Elsevier Policy on Article Withdrawal can be found at https://www.elsevier.com/about/our-business/policies/article-withdrawal

研究领域: 材料科学 · 光学工程
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JOURNAL OF NANOPARTICLE RESEARCH · 2014 ·Vol. 16 ·期 12 ·1-8 · IF 2.278

Inorganic Sn–X complex ligands capped CuInS2 nanocrystals with high electron mobility

Li Jinjie,Shen Huaibin,Zhou Changhua,Li Ning,Wang Hongzhe,Li Lin Song

We report a facile method for the synthesis of size-controlled triangular CuInS 2 (CIS) semiconductor nanocrystals (NCs) in the organic phase, and then, molecular metal chalcogenide complexes capped CIS NCs can be synthesized by exchanging original organic compounds with (NH 4 ) 4 Sn 2 S 6 inorganic ligands in environmentally benign solvent. The properties of CIS NCs (coated by both organic and inorganic ligands) were characterized by UV–Vis spectroscopy, fourier transform infrared, transmission electron microscopy, X-ray diffraction, thermogravimetric analysis, X-ray photoelectron spectroscopy, and dynamic light scattering. CuInS 2 NCs (before and after ligand exchange) films were spin coated on cleaned ITO glass substrates, and the charge transport properties were detected by current-voltage characteristic. We observed that the ligands on the surface of CIS NCs have been exchanged successfully, and the electrical transparency of (NH 4 ) 4 Sn 2 S 6 -CIS NCs films was obviously increased than CIS NCs with organic capping ligands.

CAS / MDL: 1313-84-4
研究领域: 材料科学 · 化学
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Solar RRL · 2018 ·Vol. 2 ·期 6 ·1800044 · IF 0

10.3% Efficient CuIn(S,Se)2 Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

Jingjing Jiang,Shaotang Yu,Yuancai Gong,Weibo Yan,Rui Zhang,Shujuan Liu,Wei Huang,Hao Xin

Fabricating high performing chalcopyrite absorber material from environmental benign solvent is very important for large scale manufacturing production. Here, N, N-dimethylformamide (DMF) is used as a single solvent to make CuIn(S,Se) 2 (CIS) molecular precursor solution and fabricate CIS absorber material. A power conversion efficiency of 10.3% has been achieved from film selenized under 1.6 atmosphere Ar pressure which is 0% for film selenized under 1 atmosphere pressure. Characterizations using XRD, SEM, TEM, EDX reveal a Cu-rich absorber material consisting of loosely connected grains with vertical holes in film selenized under 1 atmosphere and a Cu-poor compact large-grain top layer with large hole bottom layer in film selenized under high Ar pressure. Further optimization of precursor formulation and device fabrication conditions to address the non-perfect double layer structure is expected to further improve DMF solution processed CIS solar cell efficiency. Our results demonstrate annealing precursor film under increased atmosphere pressure is a new and promising strategy to fabricate high performing thin film solar cells, which can be applied to all solution processed chalcogenide solar cells including CIS, CIGS and CZTS.

研究领域: 材料科学 · 能源技术
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COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS · 2024 · IF 4.9

Realizing efficient near-infrared emission in Cu-In-S/ZnS quantum dots: Aqueous synthesis, optical properties and applications

Xiaojiao Kang,Tianyu Gao,Wei Lü,Ming Jiang,Hongbo Zhu,Hongcheng Wang

Ternary I-III-VI quantum dots (QDs) are promising substitutions to Pb and Cd chalcogenide QDs in various applications such as LED, biodetection and sensing. It is urgent to explore near-infrared (NIR) emitting QDs with the advantages of low-cost synthesis and nontoxicity. Herein, water-soluble NIR Cu-In-S/ZnS (CIS/ZnS) QDs were obtained utilizing thioglycolic acid (TGA) and polyethyleneimine (PEI) as the stabilizing molecules in a commercial pressure cooker. Moreover, we detailedly investigated the influence factors on the PL property of CIS QDs and CIS/ZnS QDs including species of sulfur source, reaction time, pH, the dosage of TGA, PEI, Na 2 S, number of ZnS coating layers and the molar ratio of Cu/In. These QDs with adjusting Cu/In ratios show the emission maximum in the range of 710–750 nm. The maximum PL quantum yield (PLQY) of 20 % was acquired for CIS/ZnS QDs with a Cu/In ratio was 0.33/1 and three ZnS layer coating. Finally, we fabricated a NIR pc-LED lamp by using blue LED chips and CIS/ZnS QDs. The device shows a broadband NIR emission centered at 770 nm, which can be applied in night-vision system.

研究领域: 材料科学 · 光学 · 生物医学工程
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JOURNAL OF LUMINESCENCE · 2013 · IF 2.144

Thioglycolic acid-capped CuInS2/ZnS quantum dots as fluorescent probe for cobalt ion detection

Lili Zi,Yu Huang,Zhengyu Yan,Shenghua Liao

A novel sensing fluorescent probe based on the fluorescence quenching of the thioglycolic acid-capped CuInS 2 /ZnS quantum dots (CuInS 2 /ZnS/TGA QDs) was established for cobalt ions detection. The fluorescence quenching of CuInS 2 /ZnS/TGA QDs was due to the increasing surface deficiency and the inner-filter effect, which were attributed to the reaction between Co 2+ and sulfur bonds on the surface of QDs. The quenching curve could be fitted by a typical Stern–Volmer-type equation, with a linear relationship between the quenching efficiency and the concentration of cobalt ions in the range of 0.3012–90.36   μmol   L −1 . And the detection limit (S/N=3) for Co 2+ was 0.16   μmol   L −1 . Therefore, the established probe provided a simple, rapid, cheap and sensitive method for Co 2+ detection. In a word, this method can be used to detect Co 2+ in the environment.

CAS / MDL: 68-11-1 96-27-5
研究领域: 分析化学 · 环境科学
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ADVANCED FUNCTIONAL MATERIALS · 2023 ·Vol. 34 ·期 8 ·2310124 · IF 19

Back Contact Plasma Treatment Enables 14.5% Efficient Solution-Processed CuIn(S,Se)2 Solar Cells

Xinyu Li,Chengfeng Ma,Naiyun Liu,Chunxu Xiang,Shuxia Wei,Weibo Yan,Wei Huang,Hao Xin

Solution-processed chalcopyrite thin film solar cells have made great progress but still lag behind the vacuum-based ones due to inferior absorber quality and non-ideal interfaces. Here, plasma treatment of the molybdenum (Mo) substrate is reported to modify the back interface and improve the efficiency of solution-processed copper indium sulfoselenide (CuIn(S,Se) 2 , CISSe) solar cells. The results show plasma treatment oxides the surface Mo/MoO 2 to high oxidation oxides MoO 3-x (0 ≤ x < 1). The higher surface polarity greatly improves the wettability of the substrate to the precursor solution and results in formation of more compact and uniform precursor film, which grows to void-free larger grains absorber film with better adhesion to the substrate. In addition, the much higher chemical stability of MoO 3-x than Mo significantly reduces the thickness of high resistive MoSe 2 layer. The improved absorber quality and back interface property decreases charge carrier recombination in the absorber and back contact interface, resulting in 14.53% efficiency solution-processed CISSe solar cell, which is improved by 13% compared to device without plasma treatment.

研究领域: 材料科学 · 可再生能源 · 物理化学
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