ACS Applied Materials & Interfaces
·
2016
·
IF 7.145
Yanchun Yang,Xiaojiao Kang,Lijian Huang,Daocheng Pan
Alkali metal doping plays a crucial role in fabricating high-performance Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this study, we report the first experimental observation and characterizations of the alloyed LixCu2–xZnSn(S,Se)4 thin films. It is found that Cu+ ions in Cu2ZnSn(S,Se)4 thin films can be substituted with Li+ ions, forming homogeneous LixCu2–xZnSn(S,Se)4 (0 ≤ x ≤ 0.29) alloyed thin films. Consequently, the band gap, conduction band minimum, and valence band maximum of LixCu2–xZnSn(S,Se)4 thin films are profoundly affected by Li/Cu ratios. The band alignment at the LixCu2–xZnSn(S,Se)4/CdS interface can be tuned by changing the Li/Cu ratio. We found that the photovoltaic parameters of the LixCu2–xZnSn(S,Se)4 solar cell devices are strongly influenced by the Li/Cu ratios. Besides, the lattice constant, carrier concentration, and crystal growth of LixCu2–xZnSn(S,Se)4 thin films were studied in detail.
研究领域:
材料科学
·
太阳能技术
·
半导体物理
✓ 已验证
DOI
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 6
·066108
·
IF 1.321
Qing Yu,Jiangjian Shi,Pengpeng Zhang,Linbao Guo,Xue Min,Yanhong Luo,Huijue Wu,Dongmei Li,Qingbo Meng
A study of the self-healing phenomenon of Cu2ZnSn(S, Se)4 (CZTSSe) solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage (Voc) and fill factor (FF). In addition, up to 10.45% power conversion efficiency (PCE) has been achieved. No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction (XRD) pattern, Raman spectrum, ultraviolet-visible (UV-Vis), and TOF-SIMS. Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
研究领域:
材料科学
·
可再生能源
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2016
·Vol. 8
·期 19
·10160-10165
·
IF 7.76
Wangen Zhao,Daocheng Pan,Shengzhong (Frank) Liu
Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2020
·
IF 6.984
Bin Xu,Chuanhe Ma,Xiaoshuang Lu,Yulin Liu,Qiao Zhang,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun
Cu 2 ZnSn(S,Se) 4 (CZTSSe) has received considerable attention as the promising absorber for thin-film solar cells. For traditional selenization process, the issues of Sn-loss, lower S/(S + Se) ratio, and unsuitable back contact interface extensively exist in CZTSSe solar cells. In present work, SnSe and SnS powder is introduced during selenization process, respectively. The effects of SnSe and SnS powder on CZTSSe films and the Mo/CZTSSe interface have been comprehensively studied. We discover that SnS not only can provide the Sn-contained vapor in selenization process but also offer S-vapor. Due to the presence of Sn-contained vapor, the number of voids in the CZTSSe absorber and Mo/CZTSSe interface decreases remarkably and the Sn-loss is effectively suppressed. The thickness of Mo(S,Se) 2 layer is significantly reduced, and the S/(S + Se) ratio in CZTSSe bulk obviously increases owing to the presence of S-vapor. As a consequence, the open-circuit voltage and fill factor of the solar cell significantly increase and the CZTSSe solar cell with efficiency of 10.07% (total area) is successfully fabricated.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
Nanoscale Research Letters
·
2015
·Vol. 10
·期 1
·1-6
·
IF 2.779
Guo Jing,Pei Yingli,Zhou Zhengji,Zhou Wenhui,Kou Dongxing,Wu Sixin
Solution-processed approach for the deposition of Cu 2 ZnSn (S,Se) 4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Solar RRL
·
2021
·Vol. 6
·期 1
·2100778
·
IF 8.582
Hongling Guo,Rutao Meng,Long Hu,Chun-Ho Lin,Yali Sun,Yue Liu,Jianyu Wu,Zhan Shen,Dewei Chu,Gang Wang,Li Wu,Guangxing Liang,Shifu Xiong,Fangfang Liu,Yi Zhang,Tom Wu
In spite of the merits such as Earth abundance and high performance, Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells suffer from unfavorable Sn Zn antisite defects and complexes, which act as nonradiative recombination centers and deteriorate the open-circuit voltage ( V OC ). Therefore, the management of Sn composition is the prerequisite for achieving high-efficiency CZTSSe photovoltaic devices. At present, the Sn-related composition and defect modifications at different selenization pressures remain unclear, which restrain the development of efficient kesterite solar cells. Herein, a facile yet effective strategy to accurately adjust the Sn content in CZTSSe films by simply optimizing the selenization pressure is demonstrated. Compared with the widely used atmospheric pressure, it is unveiled that the appropriate negative pressure (0.7 atm) can tailor the optimal Sn content in the absorber layer, influencing both the Sn-related defects and the microstructures. In contrast, a lower (0.4 atm) and a higher (1.3 atm) selenization pressure results in undesirable deep Cu Sn defects and a Sn(S,Se) 2 secondary phase, respectively. A champion device fabricated at this optimal selenization pressure (0.7 atm) exhibits a power conversion efficiency of 11.32% with a V OC of 0.496 V. This study paves the path toward highly efficient kesterite solar cells by tailoring the composition-dependent defects.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
高影响因子
Nature Energy
·
2023
·Vol. 8
·期 5
·526-535
·
IF 56.7
Zhou Jiazheng,Xu Xiao,Wu Huijue,Wang Jinlin,Lou Licheng,Yin Kang,Gong Yuancai,Shi Jiangjian,Luo Yanhong,Li Dongmei,Xin Hao,Meng Qingbo
The control of the phase evolution during the selenization of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is crucial for efficient solar cells. Here, we regulate the phase-evolution kinetics of Ag-alloyed CZTSSe by applying a positive pressure in the reaction chamber at the initial stage of the annealing process. The partial pressure of Se decreases, reducing the collision probability between selenium molecules and the kesterite precursor during the initial formation of the crystals. This results in the precursor transforming into CZTSSe in a single step, without the formation of secondary phases. CZTSSe forms at relatively higher temperature than conventional methods, leading to high-crystallinity kesterite films with fewer defects. We demonstrate solar cells with a total area efficiency of 14.1% and a certified total area efficiency of 13.8%. This work provides insights into the selenization mechanism and phase evolution of kesterite absorbers, enabling efficient solar cells.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2024
·
IF 5.4
Fuyan Chen,Bowen Liu,Wei Shao,Jiaxin Gao,Chenxi Zhao,Dongdong Shen,Daocheng Pan,Xinan Shi
Compared with the traditional Mo back electrode of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, the transparent and conductive electrode of fluorine-doped tin oxide (FTO) has the advantages of low lattice mismatch with the CZTSSe absorber, earth-abundant composition, transparency, and advanced applications in building integrated photovoltaics. Hence, the research of bifacial FTO/CZTSSe thin film solar cells has attracted more and more attention. However, the poor interface contact between n-type FTO/p-type CZTSSe prevents the improvement of power conversion efficiency (PCE) of CZTSSe thin film solar cells deposited on the FTO substrate. Therefore, back contact interface modification is an effective strategy to promote the performance of the FTO/CZTSSe solar cells. Here, we choose the solution-processed MoO3 as the interface layer to modify the interface of FTO/(Cu,Ag)2ZnSn(S,Se)4 (CAZTSSe), and systematically investigate the effects of the thickness of MoO3 interface layer on the performance of FTO/MoO3/CAZTSSe solar cells. It is found that the optimal thickness of the solution-deposited MoO3 interface layer is 30 nm. As a result, kesterite solar cells on the FTO substrate achieve a front-side PCE of 9.49 % and a rear-side PCE of 1.04%.
研究领域:
材料科学
·
太阳能
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Xinan Shi,Yuxiang Wang,Hui Yu,Gang Wang,Lijian Huang,Daocheng Pan
The crystal quality of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film is crucially important to a high-performance CZTSSe solar cell. After selenization, a bilayer CZTSSe thin film consisting of a large-grain top layer and a small-particle bottom layer is usually observed according to the literature. In this work, a facile air-annealing pretreatment is conducted for a Cu2ZnSnS4 precursor thin film prior to selenization, which can lead to sodium diffusion into the CZTS precursor thin film and surface oxidization of the CZTS thin film. Our experimental results revealed that the Na prediffusion and the surface oxidation of the CZTS precursor thin film can significantly promote the crystal growth of the CZTSSe thin film, which can completely remove the small-particle bottom layer and form a large-grain-spanned CZTSSe thin film. As a result, a photoelectric conversion efficiency of 9.80% was achieved by this method.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Yulin Deng,Shi Liu,Gang Wang
Ternary metastable wurtzite structure Cu 2 SnS 3 nanocrystals were successfully synthesized via solvothermal way. As-synthesized Cu 2 SnS 3 nanocrystals were characterized in detail by X-ray powder diffraction, energy dispersive X-ray spectrometry, UV–Vis–NIR spectrometry and transmission electron microscopy . Hybrid solution has been obtained by mixing Cu 2 SnS 3 nanocrystals ink and Zn molecule precursor solution. Hybrid solution process was used to fabricate Cu 2 ZnSn(S,Se) 4 thin film .
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2017
·
IF 7.504
Yanchun Yang,Lijian Huang,Daocheng Pan
In our recent report (ACS Appl. Mater. Interfaces2016, 8, 5308), Li+ ions had been successfully incorporated into the lattice of the selenized Cu2ZnSn(S,Se)4 thin film on a quartz substrate by substituting equivalent Cu+ ions, and Li+ ions was also found to have the little effect on the crystal growth and defect passivation. To further improve the cell performance of Li-doped CZTSSe devices, we conducted the same experiments on the sodium-rich soda-lime glass (SLG) substrate in this study, instead of sodium-free quartz substrate. Surprisingly, only trace amounts of Li (Li/Cu molar ratio ∼1 × 10–4) were detected in the final CZTSSe thin films; meanwhile, a large amount of sodium was present on the surface and at the grain boundaries of the selenized thin films. A Li/Na exchange mechanism is used to explain this phenomenon. Only on the sodium-free substrate can Li+ ions enter the CZTSSe host lattice, and doping Li+ ions on the SLG substrate are nearly identical to doping Na+ ions.
研究领域:
材料科学
·
太阳能电池
·
化学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Solar RRL
·
2021
·Vol. 5
·期 8
·2100216
·
IF 8.582
Bin Xu,Xiatong Qin,Xiaoshuang Lu,Yulin Liu,Ye Chen,Hui Peng,Pingxiong Yang,Junhao Chu,Lin Sun
Cu 2 ZnSn(S,Se) 4 has been widely regarded as a promising thin-film solar cell material. In recent years, the development of Cu 2 ZnSn(S,Se) 4 solar cells has encountered a bottleneck, and the higher open-circuit voltage deficit mainly caused by the secondary phase, CZTSSe/CdS interface recombination, deep-level defects, and band-tailing effects has been an outstanding issue. Herein, the influence of the composition and phase distribution of the precursor thin film on the defect and performance of Cu 2 ZnSn(S,Se) 4 solar cells is studied. By modifying the distribution of composition and phase for precursor films, a Cu 2 ZnSn(S,Se) 4 absorber layer without secondary phase and with fewer detrimental defects can be obtained from the pure-phase precursor film. Thanks to the reduction of the band-tailing effects, the increase in the depletion width for heterojunction, and the decrease in CZTSSe/CdS interface recombination, the photovoltaic performance of CZTSSe thin-film solar cells is significantly improved. Finally, based on the excellent kesterite absorber layer, a Cu 2 ZnSn(S,Se) 4 solar cell with 11.51% power conversion efficiency (the active area efficiency is 12.4%) is prepared.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）