The utilization of TiO 2 for the fabrication of transparent photochromic materials is both cost-effective and environmentally friendly. However, it still poses challenges due to the rapid recombination of electron-hole pairs and poor organic-inorganic compatibility. Oxygen vacancies play a crucial role in sustaining sacrificial electron donors for hole scavenging, demonstrating great potential in enhancing photochromic performance. Herein, Rb doping and lattice strain are applied to synergistically engineer oxygen vacancies, considering lattice oxygen release is influenced by charge neutrality and oxygen atom coordination environment. Furthermore, the particle surface is modified using composite siloxanes to ensure monodispersion and enhance organic-inorganic compatibility. Structural analyses and theoretical calculations indicate that Rb doping and epitaxial strain synergistically reduce the oxygen vacancy formation energy and promote the chemical adsorption of diethylene glycol (DEG) on the TiO 2 surface for hole scavenging. The designed DEG-added Rb-TiO 2 /TB-CS (TB means extra titanium butoxide, CS means composite siloxanes) nanodispersion exhibits a significant optical modulation amplitude exceeding 90% at 650 nm, rapid response within 60 s, and stable reversibility in color-switching (50 cycles). Moreover, utilizing Rb-TiO 2 /TB-CS with DEG ligands as a responsive material enables the fabrication of transparent photochromic polyacrylate-based hybrid films, polyvinyl alcohol-based hydrogels, and hydroxyethyl cellulose-based rewritable papers, showcasing its immense potential for diverse applications.
The IV-VI compound SnSe is an environmentally friendly and high-performance thermoelectric material with intrinsically low lattice thermal conductivity. Recent research efforts have focused on enhancing carrier concentration and effective mass to improve power factors, thereby achieving superior thermoelectric performance as reflected in the figure of merit ZT . In context of the anisotropic crystal structure of SnSe, this study utilized a hydrothermal method to synthesize Rb-doped SnSe nanosheets. Rb acts as an acceptor dopant, increasing the hole concentration to 2.0 × 10 19 cm −3 and promoting second valence band participation in transport at room temperature, significantly elevating the ZT value of polycrystalline SnSe to 1.41 at 773 K. Furthermore, texture engineering was implemented through a secondary sintering process. This approach facilitates the organized stacking of grains with highly preferred orientations, resulting in a notable improvement of hole mobility perpendicular to the pressure direction to further increase the power factor. By synergistically combining carrier concentration optimization with texture engineering strategies, an exceptional ZT value of 1.74 at 773 K was achieved in polycrystalline SnSe. This work presents a cost-effective, straightforward, and low-temperature synthesis route for the large-scale production of high-performance SnSe thermoelectric materials, offering significant potential for practical applications in energy harvesting and conversion.
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