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PHYSICAL CHEMISTRY CHEMICAL PHYSICS · 2019 ·Vol. 22 ·期 2 ·556-563 · IF 3.567

Antiferromagnetic topological insulator MnBi2Te4: synthesis and magnetic properties

Hao Li,Shengsheng Liu,Chang Liu,Jinsong Zhang,Yong Xu,Rong Yu,Yang Wu,Yuegang Zhang,Shoushan Fan

Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and it will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te–Bi–Te–Mn–Te–Bi–Te sequences as determined by X-ray diffraction and high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The magnetic order below 25 K as a consequence of A-type antiferromagnetic interaction between Mn layers in the MnBi2Te4 crystal suggests the unique interplay between antiferromagnetism and topological quantum states. Moreover, the transport measurements of MnBi2Te4 single crystals further confirm its magnetic transition. This study on the first AFM TI of MnBi2Te4 will guide the future research on other potential candidates in the MBixTey family (M = Ni, V, Ti, etc.).

研究领域: 材料科学 · 凝聚态物理
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ACS Nano · 2024 · IF 15.8

Layered Topological Insulator MnBi2Te4 as a Cathode for a High Rate Performance Aqueous Zinc-Ion Battery

Li Wen,Qixiang Zhang,Junjie Shi,Fei Wang,Siliang Wang,Zhiwei Chen,Yang Yue,Yihua Gao

Recently, the topological insulator MnBi2Te4 has aroused great attention owing to its exotic quantum phenomena and intriguing device applications, but the superior performances of MnBi2Te4 have not been researched in the field of electrochemistry. By theoretical calculations, it is found that MnBi2Te4 exhibits excellent Zn2+ storage and transport properties. Therefore, it is speculated that MnBi2Te4 has excellent electrochemical performance in zinc-ion batteries (ZIBs). In this research, MnBi2Te4 as a pioneer has been explored in ZIBs, showing surprising electrochemical properties. The MnBi2Te4 electrode displays a high average discharge specific capacity (264.8 mA h g–1 at 0.40 A g–1), a competitive cycle life (88.6% of initial capacity after 400 cycles at 4.00 A g–1), and an excellent rate performance (average capacity retention rate of 95.1% from 0.40 to 8.00 A g–1) owing to the fast ion transport of the conductive topological surface state and dissipationless channel of the edge state. Surprisingly, the quasi-solid-state (QSS) MnBi2Te4/Zn battery delivers excellent Zn2+ storage capability and possesses a capacity retention of 79.9% after 1000 cycles at 4.00 A g–1. In addition, the QSS MnBi2Te4/Zn battery can exhibit excellent performance and the GCD curves maintain stability without distortion deformation even at temperatures of 0 and 75 °C.

研究领域: 材料科学 · 电化学 · 能源存储
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Small · 2024 · IF 13

A new In Situ Oxidized 2D Layered MnBi2Te4 Cathode for High-Performance Aqueous Zinc-Ion Battery

Jiaao Dai,Shaojun Zhang,Fei Wang,Li Wen,Yuhao Sun,Ke Ren,Yaohua Xu,Wei Zeng,Siliang Wang

Recently, aqueous zinc ion batteries (AZIBs) with the superior theoretical capacity, high safety, low prices, and environmental protection, have emerged as a contender for advanced energy storage. However, challenges related to cathode materials, such as dissolution, instability, and structural collapse, have hindered the progress of AZIBs. Here, a novel AZIB is constructed using an oxidized 2D layered MnBi 2 Te 4 cathode for the first time. The oxidized MnBi 2 Te 4 cathode with large interlayer spacing and low energy barrier for zinc ion diffusion at 240 °C, exhibited impressive characteristics, including a high reversibility capacity of 393.1 mAh g −1 (0.4 A g −1 ), outstanding rate performance, and long cycle stability. Moreover, the corresponding aqueous button cell also exhibits excellent electrochemical performance. To demonstrate the application in practice in the realm of flexible wearable electronics, a quasi-solid-state micro ZIB (MZIB) is constructed and shows excellent flexibility and high-temperature stability (the capacity does not significantly degrade when the temperature reaches 100 °C and the bending angle exceeds 150°). This research offers effective tactics for creating high-performance cathode materials for AZIBs.

CAS / MDL: 67-63-0 872-50-4
研究领域: 材料科学 · 能源存储与转换
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JOURNAL OF SOLID STATE CHEMISTRY · 2025 · IF 3.5

Crystal growth and magnetic evolution of antiferromagnetic topological insulator Zn-doped MnBi2Te4

Zhenduo Fan,Haohang Xu,Jinggeng Zhao,Yaohui Zhang,Xianjie Wang,Yu Sui,Zhe Lv,Jian Liu,Sida Jiang,Zhiguo Liu

As the first intrinsic magnetic topological insulator , MnBi 2 Te 4 has provided a material platform for the realization of various novel physical phenomena arising from the interaction between magnetism and band topology. Here, transition element Zn - doped MnBi 2 Te 4 crystals of millimeter size, synthesized by using self-flux method, are reported. With increasing Zn content, the hexagonal lattice shrinks, and the Raman frequencies show a red shift. All samples undergo a transition from A - type antiferromagnetic (A - AFM) to canted antiferromagnetic (CAFM) to ferromagnetic (FM) under magnetic field . The antiferromagnetic ordering temperature slightly increases from 24.2 K for MnBi 2 Te 4 to 25.2 K for Mn 0.75 Zn 0.25 Bi 2 Te 4 . The transition field from AFM to CAFM decreases from 3.4 T for x  = 0–3.07 T for x  = 0.25. Isothermal magnetization data suggest that the single - ion anisotropy of Mn 2+ decrease and the interlayer magnetic interaction increase slightly due to the diluted magnetic ions and unit cell shrinkage. Samples Mn 0.9 Zn 0.1 Bi 2 Te 4 and Mn 0.8 Zn 0.2 Bi 2 Te 4 show metallic conduction with a cusplike anomaly at around T N  ≈ 24 K, corresponding to a long - range antiferromagnetic (AFM) transition. The increase of T N and decrease of transition field ( H c S F ) upon Zn doping, make it possible to manipulate magnetic and electrical properties in topological insulators by non - magnetic element substitution, which is of great significance for further application in quantum information storage and spintronics .

CAS / MDL: 13494-80-9 7439-96-5
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