Xiao Li,Lixuan Zhang,Tingsong Li,Chen Hu,Haobo Hao,Lexiang Wu,Dariusz Hreniak,Jiang Li
The use of Faraday isolators in high-power lasers is currently a high-priority research topic and terbium gallium garnet (Tb 3 Ga 5 O 12 , TGG) transparent ceramic is a magneto-optical material with great potential for applications in the visible and near-infrared ranges. In this paper, the effect of chemical composition adjustment on the microstructure and properties of Tb 3 Ga 5(1+x) O 12 ceramics (where x is the non-stoichiometric index corresponding to the percentage difference in the amount of Ga used in the synthesis with respect to its content in the stoichiometric compound) was investigated. Powders obtained from starting materials of different stoichiometry were found to have similar morphology. However, the relative densities of the ceramics after pre-sintering in air increase with increasing Ga content. After the HIP post-treatment, the optimal properties with an in-line transmittance of 78.5 % (1.5 mm thick) at 1064 nm, and the Verdet constant of the ceramics with x = 0.8 % reaches −134.1 rad T −1 m −1 at 633 nm.
Single phase chalcopyrite and near stoichiometric CuIn 1− x Ga x Se 2 (0 ≤ x ≤ 1) nanoparticles were successfully synthesized by using a facile and rapid one-pot method. The effects of various Ga contents on crystal phase, morphology, element composition and absorption spectrum of the as-synthesized CuIn 1− x Ga x Se 2 nanoparticles were investigated in detail. The XRD and Raman patterns indicated that the as-synthesized nanoparticles had a single phase chalcopyrite structure, and the diffraction peaks shifted toward larger diffraction angles or higher frequencies with increasing Ga content. The FE-SEM images showed that the as-synthesized nanoparticles were polydispersed in both size and shape, and the nanoparticles with higher Ga content were more prone to aggregate. The Vis–IR absorption spectra showed strong absorption in the entire visible light region. The estimated band gap increased from 1.00 eV to 1.68 eV as Ga content increasing.