JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2022
·Vol. 33
·期 15
·11625-11631
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IF 2.779
Xing Zhuo,Weng Juhai,Ma Chi
A series of Ga 3+ -doped Zn 2 GeO 4 willemite ceramics, in a general formula Zn 2+0.5 x Ge 1− x Ga x O 4 (0.1 ≤ x ≤ 0.4), were prepared and the influence of Ga 3+ doping on the phase composition, structure, microstructure, and microwave dielectric properties were studied. XRD, SEM, and Raman analysis evidence that by moderate gallium substitution in the nominal Zn 2 GeO 4 , the unfavorable ZnO phase was suppressed, while a low-loss ZnGa 2 O 4 phase was induced. With increasing doping content, the ZnGa 2 O 4 phase increases in phase percentage and becomes dominant (~ 69%) after x = 0.3. Due to the mixture rule, both relative permittivity and quality factor were improved, which is related to the superior dielectric properties of ZnGa 2 O 4 compared to Zn 2 GeO 4 . The microwave dielectric properties show a remarkable dependence on the composition. Sintered at 1230 °C, a combination of dielectric performances with ε r ~ 9.4, Q × f ~ 97,000 GHz, and τ f ~ − 30.7 ppm/°C was accessed in the x = 0.4 composition.
研究领域:
材料科学
·
电子工程
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产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2020
·
IF 4.473
Chao Chen,Yao Sun,Linchun He,Masashi Kotobuki,Emil Hanc,Yu Chen,Kaiyang Zeng,Li Lu
The Garnet-type solid electrolyte Li7La3Zr2O12 (LLZO) showing high ionic conductivity and a wide electrochemical potential window is considered as one of the most promising candidates for solid-state batteries. Among various doping derivatives, the Al- and Ga-doped LLZO electrolytes are intensively studied because of their ability to enhance the stability of the cubic structure and to promote good sinter ability as well. Despite showing great similarities in site preference and sintering behavior, the Al and Ga doping derivatives differ by 1 order of magnitude in total ionic conductivity. Therefore, a comparative study on the doping characteristics of Al and Ga with respect to ionic conductivity and sintering behavior is necessary. Herein, we simultaneously introduced Al and Ga into Li sites (AlxGa0.25–x-LLZO) to study their influences on the microstructure and electrochemical properties of LLZO. The results show that Ga doping enables a higher conductivity than Al doping and largely promotes sinter ability at the same time. Compared to Al single doping (Al0.25), Ga-contained compositions (x < 0.25) show significant grain growth. Moreover, a slight inclusion of Ga (Al0.20Ga0.05) not only modifies the sintering behavior that results in a microstructure transition from fine grains of Al0.25 (5–20 μm) to abnormally large grains (several hundred micrometers) but also greatly enhances the conductivity, yielding a value that is 3 times higher. However, further increases in Ga ratio in AlxGa0.25–x results in marginal increases in conductivity. The total conductivity reaches a maximum of 1.19 × 10–3 S cm–1 for Ga single doping (Ga0.25) at room temperature. In addition, Al0.25 also shows fast ion conducting behavior along the grain boundaries with a conductivity of 8.30 × 10–4 S cm–1. Consequently, this study sheds lights on the different doping characteristics between Al and Ga, providing guidance for fine composition engineering of these two promising dopants.
研究领域:
材料科学
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电化学
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DOI
高影响因子
Nano Research
·
2024
·
IF 9.5
Song Kai-Zheng,He Xiao-Hang,Chen Zhe-Yong,Tang Ge,Huang Jin-Zhao,Jiang Feng-Lei
Environment-friendly indium phosphide (InP)-based quantum dots (QDs) with efficient red-emitting properties are sufficiently needed to satisfy the requirement of burgeoning display and lighting technology. Currently, the syntheses of InP QDs using tris(trimethylsilyl)phosphine as the precursor are highly toxic and expensive. Herein, we successfully introduced gallium (Ga) ions into tris(dimethylamino)phosphine-based red InP cores through thermally-promoted cation exchange, and the obtained Ga-doped InP cores exhibited significantly increased photoluminescence quantum yields (PLQY) of up to 26%. The existence of Ga was directly confirmed by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, and the functions of Ga were systematically studied. After subsequent coating of Ga-doped InP cores with ZnSeS and ZnS shells, the resulting Ga-InP/ZnSeS/ZnS QDs achieved a high PLQY of 62% with an emission maximum at 640 nm. In contrast, without Ga-doping, the PLQY only attained 36% using the same synthetic approach. This indicated an approximate 1.7-fold increase in PLQY. The enhancement of photoluminescence was related to the Ga 3+ , as it not only passivated surface defects of InP cores but also reduced core-shell interface stress. The Ga-InP/ZnSeS/ZnS QDs exhibited good stability towards heat treatment and ultraviolet (UV) irradiation. Moreover, the red light-emitting diode (LED) based on Ga-InP/ZnSeS/ZnS QDs performed well in a wide injected current range of 2 to 200 mA, with a maximum power efficiency of 0.68 lm/W. This work showcases Ga-doping through cation exchange as a promising strategy for enhancing the efficiency of InP-based red emitters.
研究领域:
材料科学
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纳米技术
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DOI
高影响因子
JOURNAL OF APPLIED PHYSICS
·
2021
·Vol. 130
·期 14
·
IF 2.546
Peng Xiao-Yan,Tang Yu-Cheng,Zhang Bo-Ping,Zhu Li-Feng,Xun Bo-Wei,Yu Jing-Ru
BiFeO 3 -BaTiO 3 is a promising high-temperature lead-free piezo-ceramics due to its high Curie temperature ( T C > 500 °C) and excellent piezoelectric properties. However, a high leakage current was often detected in this system, which severely affects its applications. In this work, the 0.7BiFe (1− x ) Ga x O 3 -0.3BaTiO 3 (BFGa x -BT, 0.00 ≤ x ≤ 0.10) system was designed to reveal the reason of leakage-current density decreased by their leakage mechanism. Because of the suppression of generation of Fe 2+ and oxygen vacancy ( V O ∙ ∙ ), the leakage mechanism from space charge limited conduction mechanism found in Ga-free BF-BT ceramics turns into Ohmic conduction and Schottky emission mechanism as Fe 3+ was replaced with Ga 3+ . A good combination of piezoelectric properties ( d 33 = 174 pC N −1 and k p = 29%) and high Curie temperature ( T C = 497 °C) was achieved in the BFGa0.06-BT ceramic owning the lowest leakage-current density. This work will provide the clues for preparing the high insulation and high piezoelectric performance BF-BT-based ceramics by suppressing the valence change of Fe 3+ and V O ∙ ∙ appearance.
研究领域:
材料科学
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无机化学
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产品关联
DOI
高影响因子
Materials Today Bio
·
2025
·
IF 10.2
Hanrui Xi,Xihao Jiang,Shilang Xiong,Yinuo Zhang,Jingyu Zhou,Min Liu,Zhigang Zhou,Chengyu Zhang,Shiwei Liu,Zhisheng Long,Jianguo Zhou,Guowen Qian,Long Xiong
Exacerbation of osteolysis in osteoporotic bone defects presents a significant challenge for implant-based treatments. This underscores the urgent need to develop implants that actively mitigate osteolysis while simultaneously promoting bone regeneration. In this study, the osteogenic potential of mesoporous bioactive glass (MBG) and β-tricalcium phosphate (β-TCP) was combined with the anti-bone resorption property of Ga doping. Ga-MBG was synthesized using a self-transformation method and subsequently incorporated into β-TCP at concentrations of 5 wt%, 10 wt% and 15 wt%. Scaffolds were prepared using extrusion-based 3D printing. The cytocompatibility of the composite scaffolds and their regulatory effects on the differentiation of osteoblasts and osteoclasts were systematically examined. In addition, the molecular mechanisms underlying bone regeneration and osteolysis regulation in osteoblasts were explored. Subsequently, cranial defects were repaired in a rat model of osteoporosis to assess the therapeutic efficacy and biological safety of the optimal concentration of the Ga-MBG/TCP composite scaffold. These findings indicated that the 10 wt% Ga-MBG/TCP composite scaffold exhibited excellent biocompatibility, enhanced new bone formation, and effectively mitigated osteolysis. These results provide a foundation for further investigation into the optimal concentration of Ga-MBG implants and highlight their potential application in future therapies for osteoporotic bone defects.
研究领域:
生物材料学
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骨科医学
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再生医学
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产品关联
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
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2021
·
IF 13.273
Ying Zhang,Zhen Xin Hui,Hong Yu Zhou,Shi Feng Zai,Zi Wen,Jian Chen Li,Chun Cheng Yang,Qing Jiang
Design and fabrication of high-efficiency electrocatalysts for hydrogen evolution reaction (HER) in alkaline conditions are crucial to reduce energy losses in water-alkali and chlorine-alkali industry yet challenging. Herein, density functional theory simulations indicate that the Ga dopant could systematically enhance the HER activity of CoP by improving the H 2 O adsorption, weakening OH adsorption, and optimizing the H adsorption/desorption. Aided by these findings, we successfully prepared ultrathin Ga-doped CoP nanosheets (Ga-CoP NSs) self-supported electrode via electrodeposition followed by the phosphorization treatment for the first time. Ga-CoP NSs delivers superior HER electrocatalytic activities with a very low overpotential of 44 mV to drive a current density of 10 mA cm −2 , outperforming almost all non-noble metal based HER electrocatalysts in alkaline media.
研究领域:
材料科学
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电化学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2024
·
IF 5.8
Qihua Liang,Guotao Lin,Junting Gao,Zequan Li,Qingge Feng
Formaldehyde is a ubiquitous indoor pollutant. Developing metal oxide semiconductors gas sensors for selective ppb-level formaldehyde detection is challenging. Therefore, developing gas sensors that can selectively detect indoor formaldehyde at ppb levels is important. In this study, outer-walled thin sheet-like microspheres of Ga-doped In 2 O 3 (Ga x In 2-x O 3 , x = 0, 0.1, 0.2, 0.3, and 0.4) were fabricated using a facile two-step synthetic method. The Ga 0.3 In 1.7 O 3 based sensor shows the response (556 ± 25) to 100 ppm formaldehyde at 80 °C, which is around 6.5 times that of the pure In 2 O 3 based sensor at 90 °C. Furthermore, it has fast response time (< 3 s), excellent selectivity (S Formaldehyde /S Ethanol = 160, S Formaldehyde /S Acetone = 267), good stability (at least 60 days), and ultra-low limit of detection (10 ppb) for formaldehyde at 80 °C. The improved formaldehyde sensing performance of Ga 0.3 In 1.7 O 3 microspheres is attributed to the optimization of surface chemisorbed oxygen, which is caused by Ga doping regulating the Fermi level of In 2 O 3 as well as an increase in the specific surface area.
研究领域:
材料科学
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环境科学
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DOI
高影响因子
Nanoscale Research Letters
·
2018
·Vol. 13
·期 1
·1-10
·
IF 3.125
Lan Lifang,Li Sheng,Li Jun,Lu Lu,Lu Yan,Huang Si,Xu Shuaijun,Pan Chunyang,Zhao Fenghua
A sol-gel method was adopted to obtain LiNi 0.5-x Ga x Mn 1.5 O 4 ( x = 0, 0.04, 0.06, 0.08, 0.1) samples. The effect of Ga doping on LiNi 0.5 Mn 1.5 O 4 and its optimum content were investigated, and the electrochemical properties at room temperature and at a high temperature were discussed. The structural, morphological, and vibrational features of LiNi 0.5-x Ga x Mn 1.5 O 4 ( x = 0, 0.04, 0.06, 0.08, 0.1) compounds were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy (FT-IR). The XRD results demonstrate that all samples have a disordered spinel structure with a space group of Fd3m, and Ga doping restrains the formation of the Li x Ni 1-x O secondary phase. FT-IR analysis reveals that Ga doping increases the degree of cation disorder. The SEM results reveal that all samples possess a fine spinel octahedron crystal. The electrochemical performance of the samples was investigated by galvanostatic charge/discharge tests, dQ/dV plots, and electrochemical impedance spectroscopy (EIS). The LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample with the optimum content shows a superior rate performance and cycle stability after Ga doping, especially at a high discharge rate and high temperature. In addition, the LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample retained 98.3% of its initial capacity of 115.7 mAhg −1 at the 3 C discharge rate after 100 cycles, whereas the pristine sample delivered a discharge capacity of 87.3 mAhg −1 at 3 C with a capacity retention of 80% at the 100th cycle. Compared with the pristine material, the LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample showed a high capacity retention from 74 to 98.4% after 50 cycles at a 1 C discharge rate and 55 °C.
研究领域:
材料科学
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电化学
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DOI
高影响因子
Journal of Materials Chemistry A
·
2022
·Vol. 10
·期 13
·7300-7313
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IF 14.511
Zhao Sun,Junpeng Liu,Rongjun Zhang,Yu Wu,Hongwei Li,Sam Toan,Zhiqiang Sun
Sorption-enhanced steam reforming of methanol (SE-SRM) is a promising approach to creating a high-purity hydrogen supply. However, catalysts suffer from activity deactivation and low CO2 uptake capacity. In this study, we investigate the role of Ga doping of Cu–MgO in SE-SRM by synthesizing a series of MgO embedded xGaCuMg catalytic sorbents via a sol–gel method. The TEM-EDX mapping results indicate that MgO nanoparticles can be successfully embedded in the bulk-phase of the catalytic sorbent with a stabilized microstructure. The results from in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) reveal that the Ga-doped catalytic sorbent is conducive to promoting the conversion of C-containing intermediates in SE-SRM, and absorbing CO2 in the form of bidentate carbonate rather than monodentate carbonate. Experimental studies verify that the best uptake capacity of 18GaCuMg catalytic sorbent (36.25 mg CO2/g MgO) achieves almost complete conversion of methanol (99.70%) with 100% H2 selectivity at 200 °C. Specifically, no CO is formed during the kinetic-control stage of SE-SRM. Density functional theory (DFT) calculations based on the Cu(111)Ga2O3(202)MgO(200) model revealed that the Ga doping can enhance the adsorption energies of methanol and carbon dioxide, promoting methanol activation and increasing CO2 uptake capacity. These findings provide valid strategies for functionalized nanomaterial design, which will substantially promote the SE-SRMR performance with desired catalytic sorbent recyclability.
研究领域:
材料科学
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催化化学
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能源工程
✓ 已验证
DOI
高影响因子
SOLID STATE IONICS
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2025
·
IF 3.3
Shihao Fu,Pingmei Li,Shiyu Yu,Yang Hu,Yibo Liu,Daming Chen,Yaqing Wei,Yuanxun Li,Yong Chen
The garnet-type Li 7 La 3 Zr 2 O 12 (LLZO) has garnered significant attention due to its superior thermal stability and broad electrochemical window. However, LLZO exhibits instability at room temperature and readily transforms from a cubic phase ( c -LLZO) to a tetragonal phase ( t -LLZO), resulting in issues such as low ionic conductivity. Herein, the effect of Ga doping on LLZO is investigated. Combined with SEM, activation energy, ionic conductivity and XRD refinement, the results demonstrate that Li 7-3x Ga x La 3 Zr 2 O 12 exhibits better properties when x = 0.25. Solid-state nuclear magnetic resonance (SSNMR) showed that Ga0.25-LLZO was favorable for promoting Li + transport. Moreover, Li| [email protected] |Li symmetric cells exhibit lower interfacial specific impedance (IASR) and higher critical current density (CCD) than both Li|Ag@Ga0-LLZO|Li and Li| [email protected] |Li and was stabilized at 0.15 mA/cm 2 for 1300 h of stable cycling. In addition, the all-solid-state battery Li| [email protected] |LFP was cycled at 0.2C for 100 cycles with 82 % capacity retention, demonstrating its promising application in lithium batteries.
研究领域:
材料科学
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电化学
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产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2025
·
IF 5.5
Dong Wang,Huijuan Wu,Xiangbin Chen,Ning Qi,Man Jiang,Zhiquan Chen
In this paper, gallium-doped indium oxide (In2O3) compounds with different doping amounts were fabricated through the hydrothermal method and the Spark Plasma Sintering process. X-ray diffraction showed that Ga was efficiently doped into the In2O3 lattice. The electrical conductivity is significantly improved by Ga doping, which is due to the reduced potential barrier of the carriers for the transition to the conduction band. The carrier concentration of Ga-doped In2O3 reaches 1.11 × 1020 cm–3, which is 12 times that of pristine In2O3, and the electrical conductivity (6.79 × 104 S m–1) is 5 times that of pristine In2O3. Furthermore, the lattice distortion in the doped sample acts as strong phonon scattering centers, which effectively reduce the mean free path of the phonons, resulting in a significant decrease in the lattice thermal conductivity. Finally, at 873 K, the zT value of In1.88Ga0.12O3 reaches 0.22, which shows a 100% increase compared with that of the pure In2O3 sample. Our results show that the control of metal doping and microstructure can achieve synergistic optimization of the electrical properties and thermal conductivity of In2O3, providing a reference for other thermoelectric materials.
研究领域:
材料科学
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凝聚态物理
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Wei Luo,Peitong Li,Yi Liu,Xiaoyan Yuan,Xu Jiang,Shouwu Guo
In this study, a series of V 2 (Al 1−x Ga x )C microrods are synthesized for the first time in a molten salt system using short carbon fibers as carbon source and sacrificial template. The phase components, structural characteristics, and microwave absorption performance of as-prepared V 2 (Al 1−x Ga x )C microrods are systematically investigated. The calculated lattice distortion degree results confirm that the phase structure, grain boundary density, and internal stress of V 2 (Al 1−x Ga x )C microrods can be effectively modulated by controlling the doping amount of gallium element. The synergistic effects of dielectric loss, magnetic loss, multiple reflection and scattering afford the V 2 (Al 1−x Ga x )C microrods with enhanced microwave absorption intensity and bandwidth. Specifically, V 2 (Al 0.5 Ga 0.5 )C microrod displays a minimum RL value of − 55.62 dB at 12.00 GHz, and the broadest EAB could reach 4.16 GHz with a thickness of 1.75 mm. Compared with the M sites doped MAX phases, A sites doped V 2 (Al 1−x Ga x )C exhibit more excellent electromagnetic energy attenuation capacities.
研究领域:
材料科学
·
电磁学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）