Nature Communications
·
2023
·Vol. 14
·期 1
·1-9
·
IF 16.6
Yu Jun,Wang Han,Zhuge Fuwei,Chen Zirui,Hu Man,Xu Xiang,He Yuhui,Ma Ying,Miao Xiangshui,Zhai Tianyou
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-Li x MoS 2 as edge contact, we show that ultrafast (10–100 ns) and robust (endurance>10 6 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS 2 as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can facilitate hot carrier injection to the semiconductor channel and subsequent tunneling when compared to a conventional top contact with high density of defects at the metal interface. Our results suggest that contact engineering can become a strategy to further improve the performance of 2D flash memory devices and meet the increasing demands of high speed and reliable data storage.
研究领域:
材料科学
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电子工程
✓ 已验证
DOI
高影响因子
ORGANIC ELECTRONICS
·
2021
·
IF 3.721
Yijia Zhou,Xiaofeng Zhao,Yingna Zhang,Feng Dou,Shuhong Wang,Cheng Wang
The poly[2,7-9-(9-heptadecanyl)-9H-carbazole-co-benzo[4,5] imidazole[2,1-a]isoindol-11-one] (PCz-O) was synthesized by Suzuki coupling reaction, which structure was verified by FT-IR, 1 H NMR and 13 C NMR. The spin coating method was used to prepare RRAM devices based on PCz-O: ZrO 2 nanoparticle active layer, and the devices exhibited ternary switching. Through a series of performance tests, both pure polymer device and composited with ZrO 2 NPs devices had ternary storage characteristics. Among them, the content of composited with 8 wt% ZrO 2 showed the most excellent ternary storage characteristics. The ON/OFF current ratio was 2.60 × 10 4 , and the threshold voltage V th1 / V th2 was −0.60 V/-1.00 V. The current is stable for 10000 s in both ON/OFF states. After 3300 times of reading, the switch state current of the devices had slight variation. In addition, the switching mechanism of the device was also discussed. Through carefully testing and analyzing, the devices had good stability and durability, and had potential application value in terms of data storage.
研究领域:
材料科学
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电子工程
✓ 已验证
DOI
高影响因子
JOURNAL OF CHROMATOGRAPHY B-ANALYTICAL TECHNOLOGIES IN THE BIOMEDICAL AND LIFE SCIENCES
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2016
·
IF 2.687
Xiaoqin Ma,Zihui Meng,Lili Qiu,Jing Chen,Yushu Guo,Da Yi,Tiantian Ji,Hua Jia,Min Xue
A novel solanesol extraction method based on molecularly imprinted polymer (MIP) as the Flash chromatography stationary phase was established and evaluated. Spherical MIP particles in a size range of 250–350 μm (d (0.5) = 320 μm) for solanesol were synthesized by suspension polymerization, with imprinting factor of 3.9. The MIP particles (5.5 g) were packed in common Teflon column as the stationary phase while the sample solution and elution solvent were confirmed as methanol and methanol/acetic acid solution (80/20, v/v), loading at 4 ml/min and eluting 8 ml/min, respectively. Under the optimal chromatographic conditions, the adsorption capacity of the MIP-Flash column was determined as 107.3 μmol/g, and in each process, 370.8 mg purified solanesol (98.4%) could be obtained from the extract (20 mM, 40 ml) of tobacco leaves (14.7 g), and the yield of solanesol was 2.5% of the dry weight of tobacco leaves. The results reported here confirm the feasibility to extract highly purified active ingredients directly from natural products on a large scale by MIP-Flash chromatography.
研究领域:
植物化学
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分析化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ORGANIC ELECTRONICS
·
2019
·
IF 3.495
Fu-han Liu,Ju Bai,Guang Yu,Fang-hong Ma,Yan-jun Hou,Hai-jun Niu
A series of novel polyazomethines containing EDOT and thiophene units coded as PEDOTs (PEDOT-TPA, PEDOT-TDD, PEDOT-THIO, PEDOT-APM) and PTHIOs (PTHIO-TPA, PTHIO-TDD, PTHIO-THIO, PTHIO-APM) were synthesized successfully. They were gained in short time, low cost and mild reaction conditions by a straightforward synthetic path. It can be easily found from the electrochemical properties of these polymers that the polymers containing 3,4-ethylenedioxythiophene (EDOT) unit (PEDOTs) have lower initial oxidation potentials as compared to the polymers containing thiophene unit (PTHIOs). Spectroelectrochemical properties reveal that all of the polymer films exhibit outstanding multielectrochromic behaviors, distinct color contrast and excellent electrochemical stabilities. Kinetic studies show that the PEDOT-TPA film has the shortest response time (a color switching time of 4.54 s and a bleaching time of 3.88 s at 428 nm) and the PEDOT-THIO film exhibits the highest CE of 343.56 cm 2 C −1 . Typical I-V characteristics of the ITO/plymer/Al memory devices exhibit that all the memory devices based on PEDOTs and PTHIOs exhibited nonvolatile flash memory characteristics, with an ON/OFF current density ratio of 10 3 -10 4 and low threshold voltages (around 1 V). Thus, these characteristics illustrate that these novel polymers have great potential in optoelectronics applications as electrochromic materials and memory devices.
研究领域:
材料科学
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电化学
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光学
✓ 已验证
DOI
高影响因子
RSC Advances
·
2019
·Vol. 9
·期 47
·27665-27673
·
IF 3.049
Qian Zhang,Chunpeng Ai,Dianzhong Wen,Dongge Ma,Cheng Wang,Shuhong Wang,Xuduo Bai
Three novel donor–acceptor polymers (PCz0, PCz2 and PCz4) based on 9-(9-heptadecanyl)-9H-carbazole and isoindolo[2,1-a]benzimidazol-11-one with fluorine substituents (0, 2 and 4) on the acceptor unit were prepared by Suzuki polymerization. The synthesized polymers were studied by theoretical calculation, and optical and electrochemical characterizations to further investigate the performance of memory storage and light-emission. The memory devices of the three polymers all exhibited obvious ternary flash behavior with total ON/OFF state current ratio around 104 and threshold voltages below 3.0 V, with no other blending or doping. Bright emissions of an electroluminescence device based on PCz0 was obtained at 556 nm, the maximum brightness was 2006 cd m−2 with EQE of 0.21%. The results suggested that polymers with the structure of carbazole-based donor as backbone and isoindolo[2,1-a]benzimidazol-11-one segment as acceptor could be excellent materials for memory storage and light-emitting applications with further investigation and could be used for further design of other new polymer systems.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
NEW JOURNAL OF CHEMISTRY
·
2018
·Vol. 42
·期 23
·19008-19019
·
IF 3.201
Yanhua Yang,Jing-Cheng Xia,Youxuan Zheng,Yingzhong Shen,Gaozhang Gou
An efficient and readily available novel asymmetric diamine monomer containing a strongly electron-donating triphenylamine moiety and a flexibility segment was designed and synthesized through a Suzuki coupling reaction. Then, two thermally stable and highly soluble polyimides (PI(TPA-PMDA) and PI(TPA-BPDA)) were prepared and characterized. The ITO/PI(TPA-PMDA)/Al memory device exhibited write-once read-many-times (WORM) memory behavior with a threshold voltage of −1.12 V, while the PI(TPA-BPDA) memory device demonstrated flash-type memory behavior with a turn-on voltage at −0.78 V and a turn-off voltage at +1.98 V. Both devices showed high ON/OFF current ratios beyond 103 and long retention times of 4 × 103 s. Space-charge limited-current (SCLC) conduction and local filament conduction governed the OFF- and ON-state current conduction of the two memory devices, respectively. The electrical memory switching behaviors were induced by a charge transfer process under an applied electric field, and the differences between the dihedral angles and dipole moments resulted in different memory types.
研究领域:
材料科学
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电子工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
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2022
·
IF 6.76
Zihan Zhou,Yunwen Wu,Huiqin Ling,Jie Guo,Su Wang,Ming Li
3D NAND flash memory with vertically stacked cells has been developed to break through the limits of technology nodes. However, during the selective etching process, it is difficult to ensure the byproducts diffuse away from the trenches in the multistacked layers. Once saturated, the byproduct causes abnormal redeposition on the SiO 2 layers. This problem has restricted the development of high-density 3D NAND memory. To solve this problem, the composition and formation mechanism of the redeposited layer must be clarified. In this study, a ternary-wafer system comprising a Si 3 N 4 /SiO 2 /Si 3 N 4 stack was fabricated to study the redeposition mechanism, and the morphology, elastic properties , and chemical composition of the redeposited layer were clarified. The redeposited layer consists of spherical particles with elastic surfaces (average Young’s modulus of 24.17 GPa). The particles were confirmed to comprise colloidal silica gel covered by silanols . By considering the chemistry of silica , the redeposition mechanism was proposed as follows: colloidal silica gel is formed by the aggregation of silicic acids from Si 3 N 4 etching, which adsorb onto the SiO 2 layer through oxide bridges and hydrogen bonding . Our work will contribute to the development of high-density 3D NAND memory.
研究领域:
微电子学
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半导体工艺
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材料科学
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表面化学
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纳米材料
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固态物理
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集成电路制造
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2019
·Vol. 6
·期 1
·1900493
·
IF 6.312
Huiwu Mao,Chen Gu,Shiqi Yan,Qian Xin,Shuai Cheng,Peng Tan,Xiangjing Wang,Fei Xiu,Xiaoqin Liu,Juqing Liu,Wei Huang,Linbing Sun
Low-dimensional MXene materials including MXene quantum dots (MQDs) and nanosheets have attracted extensive attention owing to their unique structures and novel properties, but their most attractive features are still less explored than expected. A systematic study of the memory effects of MQD-based electronics is reported. Monodisperse MQDs are prepared by using a one-step facile hydrothermal synthetic method. By varying the MQD content in polyvinylpyrrolidone (PVP) hybrid composite films, the electrical conductance of an indium tin oxide (ITO)/MQD-PVP/gold (Au) sandwich structure can be tuned precisely from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. These irreversible and reversible resistive switches are capable of exhibiting write-once-read-many times (WORM) and flash memory effects, respectively. Both types of devices operate stably under retention testing, with a high on/off current ratio up to 100. The tunable memory and transient features of these hybrid films are likely due to MQD charge trapping due to their quantum confinement and dissolvability of memristive components. The results suggest that MXene nanomaterials are promising as resistive switching trigger for emerging nonvolatile memories for data storage, specially data storage security.
研究领域:
材料科学
·
纳米技术
·
电子学
·
存储器件
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数据存储
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）