JOURNAL OF PHYSICS D-APPLIED PHYSICS
·
2021
·Vol. 54
·期 40
·405101
·
IF 3.207
Wei-song Liu,Hui Yang,Lan Li
The heterostructure device based on polyvinylidene fluoride (PVDF)/MoS2 films was succesfully prepared and showed a good hysteresis feature with a unique resistive switching perpromance, where the logarithmic I–V curve looks like a butterfly. The on-off ratio for the resistive switching in the device based on PVDF/MoS2 films reaches 2.5 × 102 and the resistive switching happens at −0.9 V and −4.9 V for a half loop. The influence of the introduction of MoS2 and ferroelectric PVDF film was also studied and compared to a device based on a single film. The underlying physical mechanism for the unique resistive transition was attributed to the polarization field from the ferroelectric polymer PVDF and the S vacancies in MoS2.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Advanced Science
·
2017
·
IF 9.034
Su‐Ting Han,Liang Hu,Xiandi Wang,Ye Zhou,Yu‐Jia Zeng,Shuangchen Ruan,Caofeng Pan,Zhengchun Peng
Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Fangfang Huang,Fengzhen Lv,Danruoyu Wang,Yuan Gao,Tao Wang,Jun Liu,Xuedong Tian,Fuchi Liu,Lizhen Long
A series of (CH3NH 3 ) 2- x Cs x AgBiBr 6 films ( x =0, 0.1, 0.2, 0.3, 0.4) were fabricated on ITO/glass substrates through the sol-gel method. 15 % Cs doping ( x =0.3) was the optimal condition for enhancing the film quality and achieving nonvolatile bipolar resistive switching (BRS) performance in the devices. The on/off ratio in the (CH 3 NH 3 ) 1.7 Cs 0.3 AgBiBr 6 (Cs-MAABB-3)-based RS device reached 7.7×10 4 , high and low resistance states were maintained for over 10 4 s. Under different light intensities with a wavelength of 430 nm, six distinct resistance states were recorded at −0.3 V in the Au/Cs-MAABB-3/ITO/glass device. These multilevel states remained after 5000 s and 650 cycles, indicating the excellent retention and endurance of multilevel RS memory in the Au/Cs-MAABB-3/ITO/glass device. The RS behavior in this device followed the trap-controlled space charge-limited current and conductive filament models. Cs-doping increased the concentration of intrinsic vacancies appropriately, leading to a more prominent RS effect. With varying intensities of illumination, the change of Schottky-like barrier at the Au/Cs-MAABB-3 interface, modulated by the photo-induced carriers, affected the multilevel resistance states in the device. The excellent multilevel RS performance was observed for the first time in the Cs-MAABB-3-based device. It presents broad possibilities for improving high-density memory in lead-free halide double perovskite-based devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2022
·Vol. 10
·期 5
·2102306
·
IF 10.05
Guoqing Lin,Muqing Si,Longgang Wang,Shuxin Wei,Wei Lu,Hao Liu,Yi Zhang,Danyang Li,Tao Chen
Flexible strain sensors are of great importance in many emerging applications for human motion monitoring, implanted devices, and human–machine interactive systems. However, the dual-channel sensing systems that enable both strain-dependent electronic and visually optical signal responses still remain underdeveloped, but such systems are of great interest for human–machine interactive uses. Here, inspired by the mechanically modulated skin color changes of squids via muscle contracting/releasing movements, a class of mechanofluorescent and conductive hydrogel laminates for visually flexible electronics is presented. The sensing laminates consist of interfacially bonded red fluorescent hydrogel, polydimethylsiloxane and carbon nanotubes (CNTs) film. Since the densely stacked microscopic CNTs film can be precisely stretched to induce the formation of network microcracks, the developed hydrogel laminates are endowed with simultaneous fluorescence-color and resistance changes, which can function as dual-channel flexible sensors for real-time human motion monitoring. These properties make the bioinspired soft hydrogel laminate electronics quite promising in the flexible electronics field.
研究领域:
生物医学工程
·
材料科学
·
柔性电子
✓ 已验证
DOI
高影响因子
Nano-Micro Letters
·
2024
·Vol. 17
·期 1
·1-18
·
IF 31.6
Li Xufeng,Chen Chunyan,Li Zhenyang,Yi Peng,Zou Haihan,Deng Gao,Fang Ming,He Junzhe,Sun Xin,Yu Ronghai,Shui Jianglan,Pan Caofeng,Liu Xiaofang
Unique inter-skeleton conductive films are constructed in polymer foam.
The resistance change of the foam can reach four orders of magnitude under compression.
This foam exhibits strain-adaptive electromagnetic interference shielding performance, anti-interference pressure sensor with high sensitivity over a wide pressure range and compression-regulated Joule heating function.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2024
·
IF 4.2
Weijie Jia,Lifang Hu,Wei Gao,Wenjin Mu,Zhao Chou,Xiao Cheng
TiO 2 -based resistive random access memory (RRAM) devices has the potential to fabricating nonvolatile memory applications. However, the memories based on TiO 2 have severe problems like large resistive switching parameter fluctuations, poor cycling endurance and so on, which can be a limitation of the device in practical applications. Graphene oxide (GO) is a novel material that has attracted much attention and is often applied to enhance the performance of memories due to its own special properties. In this work, two types of bilayer structure based on TiO 2 for RRAM devices were fabricated. The significant improvement in uniformity of operating voltages and high HRS/LRS ratio of the TiO 2 -based RRAM were realized by inserting a two-dimensional GO film between TiO 2 and FTO. The presence of the GO film would prevent the ion exchange between the electrodes and the switching layer as well as its insulating properties. The conduction mechanisms of all the devices in low and high resistance states were dominant by the Ohmic conduction mechanism and the space charge limited conduction mechanism, respectively. This research manifests the promising potential of two-dimensional GO embedded layer for improving resistive switching performance of RRAMs.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
CORROSION SCIENCE
·
2025
·
IF 8.5
Fei Xue,Yutong Hou,Jihui Wang,Wenbin Hu,Feixiong Mao,Liping Wang
Zn 1- x La x O film was prepared on SS304 steel surface by using hydrothermal method combined with the following heat treatment. The morphology, structure, composition, oxygen vacancy concentration and semiconductor type of film were determined. The corrosion resistance and resistive switching properties of film were analyzed by electrochemical tests and polarization-immersion experiments. The oxygen vacancy formation energy, surface adsorption energy and diffusion energy barrier of films were calculated by density functional theory (DFT). The experimental results show that the polarization treatment enables Zn 1- x La x O films switch between high and low resistance states cyclically and stably, and the excellent corrosion resistance and durability are achieved through resistive switching behavior of films. Polarization treatment can reduce the formation energy and diffusion barrier of oxygen vacancies, promoting the formation of oxygen vacancy conductive filaments in the thin film. Regulating the formation and fracture of oxygen vacancy conductive filaments can achieve cyclic switching between high and low resistance states. The film is in a state of constant repair, preventing the invasion of corrosive media through the formation and annihilation of oxygen vacancies, which provides a novel corrosion protection strategy.
研究领域:
材料科学
·
电化学
·
理论计算
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Ping Guan,Shuaixin Wu,Haoyan Meng,Zhenya Li,Mengru Liu,Yuping An,Yingliang Liu,Shengang Xu,Shaokui Cao
Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation storage technologies due to its simple structure, high running speed, excellent durability, high integration density, and low power consumption. This paper focuses on the application of organic–inorganic hybrid perovskite (OIHP) materials in RRAM by introducing an innovative three-dimensional POPA modification strategy, which is realized by binding octa-amine-polyhedral oligomeric silsesquioxanes (8NH2–POSS) onto the side chains of poly(acrylic acid) (PAA), thereby enhancing the material’s resilience under elevated temperatures and humidity conditions. POPA cross-links with perovskite grains at crystalline boundaries through multiple –NH3+ and –C═O chemical anchoring sites on its branch chain, enhancing the grain adhesion, optimizing the film quality, and improving the cage structure distribution at the perovskite grain boundaries. The experimental results demonstrate that the POPA-modified OIHP RRAM exhibits an excellent resistance switching performance, with an optimal ON/OFF ratio of 5.0 × 105 and a data retention time of 104 s. After 150 days of environmental exposure, the ON/OFF ratio remains at 1.0 × 105, indicating good stability. Furthermore, the POPA modification endows the perovskite film with considerable flexibility, maintaining stable resistance switching performance under various bending radii. This study provides a vital reference for flexible, high-performance, and long-lifespan perovskite memory devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Electronic Materials
·
2024
·
IF 4.3
Ang Li,Zhiqing Wang,Zhen Peng,Jing Zhou,Wen Chen
The facile ionic transport in all-inorganic CsPbX3 is crucial for the switching behavior and reliability of ion migration-based memristors. This work presents a method of halide ion doping to reduce the bromine vacancies on the surface of CsPbBr3 quantum dots (QDs) and enhance the migration barriers of bromine ions. This improves the performance of memristors and achieves a more stable resistive switching process. The switching voltages (VSET/VRESET) for the CsPb(Br0.93I0.07)3 QD-based device are 0.92 V/–3.01 V. The VSET/VRESET dispersion range has narrowed from ±0.12 V/±0.16 V for the CsPbBr3 QD-based device to a more consistent ±0.07 V/±0.11 V, resulting in a notable improvement in switching voltage uniformity. The stability of the device over 100 cycles has been optimized, and the HRS resistance varies from 550 × (100 ± 17%) Ω to 69550 × (100 ± 4.1%) Ω, with the ON/OFF ratio increasing significantly to 103. Consequently, this approach can effectively modulate memristive behaviors, indirectly suppressing the random generation of conductive channels. This is enlightening in constructing memristors with high stability and storage capacity.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2017
·Vol. 29
·期 3
·2007-2015
·
IF 2.019
Pang Lingyun,Ni Xiuyuan
In this article, we have carried out the polymerization of vinyl imidazole and pyrrole by using graphene oxide (GO) as photoinitiator, aiming to obtain a new nanocomposite for fabricating functional devices through solution processing. The structures of the as-synthesized ternary GO–polyvinyl imidazole–polypyrrole (GO–PVim–PPy) composite were studied by specular reflection infrared spectroscopy, transmission electron microscopy, atomic force microscopy and ultraviolet–visible spectrophotometer. The as-synthesized composites show the good water dispersibility which is generated from the structures of the composites. Raman spectroscopy and X-ray photoelectron spectroscopy were used to analyze the properties of the material interface. Moreover, by using the ternary composite as the active layer, the memory devices with the sandwich structure of Al/GO–PVim–PPy/ITO were fabricated by the spin coating. The prepared devices exhibit the nonvolatile resistive switching memory properties with the ON/OFF-state current ratio reaching 10 6 and the retention time exceeding 10 4 s. The charge transport characteristics at ON-state and OFF-state were studied by analyzing the current–voltage curves.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 4
·期 12
·1800346
·
IF 5.466
Peng Li,Wei Zhang,Jiangang Ma,Xiao Wang,Haiyang Xu,Lujia Cong,Yichun Liu
Metal fiber nanomeshes, fabricated by depositing metals on the electrospun nanofiber templates, have come into the spotlight as promising stretchable transparent conductors. However, most currently stretchable metal fibers are produced via expensive vacuum deposition methods. This work reports a low-cost approach to prepare transparent, conducting, and serpentine silver nanofiber mesh elastomers (SNME). The key of forming SNME is buckling the electrospun polymer nanofiber templates into wavy structure and subsequently electrolessly depositing silver on the templates. Optoelectronic performance of the SNME is elaborately optimized by tuning the number of Ag nanoseeds and the electroless deposition time. The resulting SNME exhibit a high visible light transmittance of 81%, a low sheet resistance of 9.2 Ω sq −1 , and an excellent stretchability with 2.4-times of resistance increases after repeated stretching to 70% for 1000 cycles. In situ observations indicate that the SNME are capable of straightening and rearranging to adapt to the tensile deformation. Its application potential as an ideal platform for fabricating intelligent interfaces is demonstrated by using the SNME as a wearable resistance sensor which can monitor finger joint motions.
研究领域:
材料科学
·
纳米技术
·
电子工程
✓ 已验证
DOI
高影响因子
Nanoscale Research Letters
·
2020
·Vol. 15
·期 1
·1-8
·
IF 3.578
Lv Fengzhen,Ling Kang,Zhong Tingting,Liu Fuchi,Liang Xiaoguang,Zhu Changming,Liu Jun,Kong Wenjie
High-quality CH 3 NH 3 PbI 3− x Cl x (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）