JOURNAL OF LUMINESCENCE
·
2022
·
IF 4.171
Wang Luo,Xintong Zhang,Kaofeng Huang,Bohan Wang,Yu Wang,Zhilie Tang,Kezhi Zheng
Long afterglow materials feature long-lasting luminescence after the cessation of the excitation source. The rising demand for afterglow materials in many applications such as deep tissue imaging, ultrasensitive sensing, and radiation detection has led to extensive research on X-ray-activated afterglow systems. However, the progress in this field is constrained by the limitation and shortage of radiation-induced afterglow materials. Herein, a newly X-ray-excited long afterglow phosphor CaZnOS:Tb 3+ has been developed by using lithium-assisted synthetic protocol. Afterglow properties of Tb 3+ -doped CaZnOS microcrystals are systematically investigated by considering the dopant concentration, reaction temperature, reaction time, reaction atmosphere, and gas flow . As the gas flow of argon atmosphere increases from 0.05 to 0.5 L/min, the CaZnOS:Tb 3+ microcrystals exhibit a distinct change in trap depth from 0.59 to 0.75 eV, corresponding to a gradual increase in afterglow time. Together with thermoluminescence analysis, the long afterglow mechanism is also discussed in this work. These results highlight the importance of reaction gas flow for the efficient regulation of traps and defects in afterglow materials. Furthermore, they provide a fundamental design principle and new route for the creation of lanthanide-doped CaZnOS afterglow phosphors.
研究领域:
材料科学
·
放射医学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF PHYSICS D-APPLIED PHYSICS
·
2023
·Vol. 56
·期 38
·384002
·
IF 3.4
Yushun Zhao,Yufan Xu,Gilbert Teyssèdre,Jianyi Xue,Yanning Zhao,Bin Du
Epoxy insulators in gas insulated switchgear and gas insulated transmission lines tend to accumulate surface charges, leading to insulation flashover. Improving the surface trap characteristics of epoxy materials, which can accelerate the surface charge dissipation of epoxy insulators, is a promising method to improve the surface insulation performance. The surface trap characteristics of epoxy materials are strongly influenced by the chemical groups in the acid anhydride molecules. In this work, by quantum chemical calculations and isothermal surface potential decay tests, taking six organic anhydrides that differ only in the methyl and carbon–carbon double bonds, we find the modulation laws of methyl and carbon–carbon double bonds on the charge trap depth within and between molecular chains. The regulation mechanism is revealed from the microscopic perspectives of electron energy structure and electron cloud offset. The changes of surface charge trap depth of epoxy materials are primarily attributed to the changes in the spatial distribution of the electron cloud density between and on the valence bonds caused by the interaction between the electron-donating methyl group and the electron-absorbing carbon–carbon double bond.
研究领域:
材料科学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
COMPOSITES SCIENCE AND TECHNOLOGY
·
2020
·
IF 7.094
Kai Yin,Qing Xie,Haoou Ruan,Qijun Duan,Fangcheng Lü,Xingming Bian,Tian Zhang
Composite dielectrics with high vacuum insulation properties are integral to today's advanced energy transmission. In this study, 5% mol Yttrium doped BiFeO 3 sub-particles were synthesized by a facile sol-gel route and then were blended with epoxy resin as filler to prepare the epoxy composites (BY5FO/EP) with a wide range of filler content . The multi-electrical investigations were employed, and the results show the BY5FO/EP composites present ultra-high surface insulation performance. As the concentration of filler increases, the dielectric constant of the BY5FO/EP composites exhibited sine-shaped variations. Considering the multiple-layers of filler particles , we determined the dielectric model of composites for a wide range of filler contents by simulation. Meanwhile, the trap depths of BY5FO/EP composites were calculated according to Isothermal Surface Potential Decay, and we found the trapping stability is of sinusoidal relevance with the filler content. The simultaneous sine-variations of dielectric polarization and trap depth lead to the vacuum surface breakdown strength of the composite increased by 111% with the optimal filler content. The results in this paper provide a prospective strategy to realize ultra-high surface insulation in a vacuum and evidence to the applicability of the Electron Triggered Polarization Relaxation theory.
研究领域:
材料科学
·
电气工程
✓ 已验证
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2024
·
IF 3.3
Chengyue Li,Xia Cai,Yaochun Qiang,Xuesong Shi,Yujia Jiang,Yan Chen,Fengqin Lai,Bo Wang,Yifan Leng,Weixiong You
Blue-light activated long afterglow luminescence phosphors have attracted much attention because of their potential application in many fields. Herein, the influence of trap depth and the quantity of electrons captured by the traps on the long afterglow luminescence properties were systematically revealed through a comparative analysis of the long afterglow luminescence performance of the series of Y 3 Al 5-x Ga x O 12 (YAGG):Ce 3+ , Cr 3+ (x = 0, 1, 2, 3, 4, 5) phosphors. To achieve long afterglow luminescence, it requires that the traps can effectively capture electrons, and possess an appropriate trap depth. Additionally, it is discovered that the quantity of electrons captured by the traps is the main factor affecting the duration of long afterglow luminescence. The more electrons are captured, the longer the afterglow lasts. The quantity of trapped electrons is inversely proportional to the energy differences between CB M -Ce 5d and trap depth. The sample exhibits the high quantity of trapped electrons attributable to its small energy differences which allows electrons to be directly captured by traps through the tunneling effect. On this basis, the effects of crystal field splitting (ε cfs ), centroid shift (ε c ), and the degree of dodecahedral distortion (D (YO)) on trap depth (E T ) were discussed to manipulate the trap depth, demonstrating there is a significant positive correlation between ε c -ε cfs (2(1-10D(YO))) and E T values for the garnet structure A 3 B 2 C 3 O 12 , when the ion doped at the A-position remains constant and the ions at the B and C positions vary. Notably, A larger D (YO) value corresponds to a deeper trap depth. This study provides a new perspective toward the development and design of long afterglow materials with superior afterglow emission.
研究领域:
材料科学
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光学
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
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2022
·
IF 16.744
Peng Liu,Yuchi Zhang,Bohan Li,Le Han,Yan Xu
Anti-counterfeiting and encryption are key technologies for information transmission in modern society. Whereas, most optical materials reported only provide single luminous color and fixed response mode, which limits their safety in advanced anti-counterfeiting applications. In this work, we reported a Bi 3+ -assisted trap depth engineering strategy to achieve a dual-mode dynamic photoluminescence response of MgGa 2 O 4 : Bi 3+ with intriguing anti-counterfeiting and encryption performances. Upon the ultraviolet (UV) of 254 nm irradiation for 20 s, the color of MgGa 2 O 4 : x% Bi 3+ (x = 0, 1.0, 2.0, 3.0, 5.0) samples showed dynamic transformation from green or near-infrared to bluish-white emission. Combined with the dynamic photoluminescent (PL) behavior of MgGa 2 O 4 : 2.0% Bi 3+ , high-level dynamic anti-counterfeiting and encryption properties of MgGa 2 O 4 : Bi 3+ for tagging spies were investigated through powder filling followed by a masked screen printing method. On the other hand, the fluorescence intensity ratios (FIR) of I 430 nm /I 500 nm and I 430 nm /I 709 nm for MgGa 2 O 4 : 2.0% Bi 3+ showed excellent temperature-dependent quenching behaviors in the temperature range of 283 to 393 K, and the relative temperature sensitivities for FIR of I 430 nm /I 500 nm and I 430 nm /I 709 nm are 2.18% and 2.98% K −1 at 283 K, respectively. These results inspired more flexible designs to safeguard information security and develop novel high-efficiency optical temperature detectors.
研究领域:
材料科学
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光学
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信息安全
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温度传感
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2022
·
IF 4.171
Kaiming Zhu,Zhanglin Chen,Yuzhen Wang,Hui Liu,Yude Niu,Xin Yi,Yihuan Wang,Xuanyi Yuan,Guanghua Liu
Eu 2+ -doped CaAlSiN 3 ‐type structure nitrides have been extensively studied as a red-emitting phosphors in white light emitting diodes (w-LEDs), but there are few reports of systematic research on the effect of solid solution substitution on their long persistent luminescent properties. In this work, a series of (M,Ca)AlSiN 3 :Eu 2+ (M = Sr, Mg) phosphors have been successfully synthesized by efficient combustion synthesis . We investigated the effect of Sr and Mg solid solution on long persistent luminescent properties. Thermoluminescence (TL) measurements were performed in those persistent phosphors to obtain direct experimental results on the trap depth. The results show that the SrAlSiN 3 :0.2 at% Eu 2+ phosphor exhibits the most intense red persistent luminescence with the persistent time of as long as 200 min at the threshold value of 0.32 mcd/m 2 due to the presence of more trap levels with suitable depths of 0.71 eV. Compared with the solid solution of Sr, the solid solution of Mg ions can increase the depth of trap levels in CaAlSiN 3 . Among them, Mg 0.2 Ca 0.8 AlSiN 3 :0.2 at% Eu 2+ phosphor achieved a maximum trap depth of 0.98 eV, making it a promising candidate for optical information storage applications.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2015
·Vol. 7
·期 25
·11048-11054
·
IF 7.394
Jintao Kong,Wei Zheng,Yongsheng Liu,Renfu Li,En Ma,Haomiao Zhu,Xueyuan Chen
Persistent luminescence phosphors, which are capable of emitting light for a long time after ceasing excitation, have shown great promise in diverse areas as bioprobes, lighting and displays. Exploring new materials to realize efficient persistent luminescence is a goal of general concern. Herein, we report a novel persistent luminescence phosphor based on Eu3+-doped SnO2 nanoparticles (NPs). The afterglow decay behaviour, the trap depth distribution as well as the underlying mechanism for persistent luminescence of the NPs were comprehensively surveyed by means of thermoluminescence and temperature-dependent afterglow decay measurements. It was found that the thermal activation mechanism is responsible for the afterglow decay of the NPs with an inverse power-law exponent of 1.0 (or 1.7) in the temperature region below (or above) 220 K. In particular, the co-existence of uniform and exponential distributions in trap depths may result in such a unique afterglow decay behaviour. These results reveal the great potential of SnO2 NPs as an excellent host material for Eu3+ doping for the generation of efficient persistent luminescence.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Wuhui Li,Yixi Zhuang,Peng Zheng,Tian-Liang Zhou,Jian Xu,Jumpei Ueda,Setsuhisa Tanabe,Le Wang,Rong-Jun Xie
Deep-trap persistent luminescent materials, due to their exceptional ability of energy storage and controllable photon release under external stimulation, have attracted considerable attention in the field of optical information storage. Currently, the lack of suitable materials is still the bottleneck that restrains their practical applications. Herein, we successfully synthesized a series of deep-trap persistent luminescent materials Y3Al5–xGaxO12:Ce3+,V3+ (x = 0–3) with a garnet structure and developed novel phosphor-in-glass (PiG) films containing these phosphors. The synthesized PiG films exhibited sufficiently deep traps, narrow trap depth distributions, high trap density, high quantum efficiency, and excellent chemical stability, which solved the problem of chemical stability at high temperatures in the reported phosphor-in-silicone films. Moreover, the trap depth in the phosphors and PiG films could be tailored from 1.2 to 1.6 eV, thanks to the bandgap engineering effect, and the emission color was simultaneously changed from green to yellow due to the variation of crystal field strength. Image information was recorded on the PiG films by using a 450 nm blue-light laser in a laser direct writing mode and the recorded information was retrieved under high-temperature thermal stimulation or photostimulation. The Y3Al5–xGaxO12:Ce3+,V3+ PiG films as presented in this work are very promising in the applications of multidimensional and rewritable optical information storage.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Powder Materials
·
2025
·
IF 24.9
Rujun Yang,Kunjie Song,Yuantian Zheng,Chenhan Zhan,Yajing Wang,Cunjian Lin,Tianliang Zhou,Yixi Zhuang,Rong-Jun Xie
Persistent Luminescence (PersL) materials, which use traps to store energy and emit photons over a long period, have found important applications in the fields of optical information storage, security labeling, and biological imaging. The trap depth is a crucial factor determining the performance of these materials; however, achieving the desired trap depth with high precision remains a great challenge. Here, we provide double perovskite phosphors (Cs 2 SnCl 6 -Cs 2 ZrCl 6 -Cs 2 HfCl 6 series) with highly compatible crystal structures, enabling continuous and precise tuning of trap depth over an ultra-wide range of 0.11 to 1.25 eV. By incorporating W 4+ as the luminescent centers, these phosphors exhibit outstanding near-infrared (NIR) PersL performance at approximately 900 nm and a lasting emission duration exceeding 10 h. The underlying mechanism of PersL is elucidated, and the wide-range tunability of trap depth is attributed to the universal applicability of band-gap engineering in the entire material system. Furthermore, we demonstrate the practical application of these materials by designing a flexible detector plate for X-ray imaging. The detector plate exhibits a storage time of more than 1 week, a detection limit of 0.83 μGy air ·s -1 in the near-infrared region, and real-time and delay-time imaging resolutions of 14.2 lp·mm -1 and 2.5 lp·mm -1 , respectively. These attributes demonstrate strong potential for X-ray luminescence extension imaging.
研究领域:
材料科学
·
光学材料
·
固体物理
·
纳米技术
·
生物医学成像
·
X射线探测
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Wenjing Chen,Yifan Song,Wenxing Zhang,Renren Deng,Yixi Zhuang,Rong-Jun Xie
The discovery of X-ray-charged persistent luminescence (PersL) in fluoride nanoparticles enables these materials to emit photons without real-time excitation, which provides a great possibility for the development of new luminescent nanotechnologies. In this work, we developed NaLuF4:Mn nanoparticles with intense green PersL and functionalized surfaces and accordingly achieved time-gated imaging of latent fingerprints (LFPs) with Level 3 details. These surface-modified NaLuF4:Mn nanoparticles exhibited near-spherical morphology, long-lasting emission for several hours, appropriate trap depth distribution, and tight chemical bonding with amino acids from fingerprints, thus greatly improving the accuracy of LFP imaging in a variety of environments. The developed NaLuF4:Mn PersL nanoparticles are expected to find broad applications in the fields of LFP imaging and in vivo biological imaging.
研究领域:
材料科学
·
纳米技术
·
法医学
·
生物医学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）