Yan Li,Shiyu Deng,Yang Li,Huan Tang,Ziyu Chen,Jinyue Xie,Feng Song,Wei Huang
With the increasing demand for anti-counterfeiting measures, the efficient integration of multi-level optical anti-counterfeiting information has become a critical challenge. In this study, a novel bottom-up self-assembly technique is introduced for fabricating composite integrated films. This method overcomes the size limitations of phosphors that achieve circularly polarized light (CPL) through co-assembly with cellulose nanocrystals. Specifically, rare earth metal-organic frameworks with a length of 140 µm can generate CPL with an asymmetry factor of 0.65. Moreover, the introduction of random defects in the film imparts unpredictable CPL properties, enabling dynamic auroral anti-counterfeiting within the decryption optical path. Additionally, an innovative two-stage serial decryption process is proposed by leveraging the non-correlation between orthogonal decryption patterns. Notably, the label surface features biomimetic fingerprint textures that exhibit 3D physical unclonable functions (PUFs) at the mesoscopic scale. These textures possess high entropy close to the ideal value of 1, and an encoding capacity in a 175 × 175 µm 2 area reaches 2 62500 . In summary, the composite label achieves a high degree of integration by combining three levels optical anti-counterfeiting information: full-chromatographic tunable photoluminescence, spatially selective random dynamic aurora responses, and 3D bionic mesoscopic PUFs fingerprints.
Extreme ultraviolet (EUV) lithography has become the essence of advanced semiconductor manufacturing processes. While enabling smaller feature sizes, EUV lithography imposes increasingly stringent requirements on the comprehensive performance and stochastic defect suppression of photoresist. The widely recognized strategy to minimize these defects is a material that integrates high EUV absorption and energy utilization into a homogeneous system based on molecular building blocks—the ideal formulation for EUV photoresist. However, achieving these integrated characteristics within a single molecule has remained an unresolved challenge. Here, we address all these requirements by polytelluoxane using an organic telluride monomer polymerized via Te─O bonds. This polymeric photoresist, operating through a main chain scission mechanism, demonstrates high-performance positive-tone lithography. Attributed to this ideal formulation, our photoresist achieves a comprehensive 18-nm line width at a dose of 13.1 mJ/cm 2 with a line edge roughness of 1.97 nm. We believe that this strategy establishes a framework for the design of next-generation EUV photoresists.
危险品化学品经营许可证（带存储）