Journal of Superconductivity and Novel Magnetism
·
2021
·Vol. 34
·期 10
·2565-2572
·
IF 1.506
Zhao Caiye,Yi Xiaolei,Hou Qiang,Feng Jiajia,Zhang Yufeng,Xu Mingxiang,Shi Zhixiang
In this work, a series of FeS 1- x Te x (0 ≤ x ≤ 0.15) single crystals were successfully synthesized by a hydrothermal method for the first time. According to the measurement of in-plane resistivity, Hall effect, and magnetoresistance (MR), we find that the superconducting transition temperature T c is rapidly suppressed with the increasing Te substitution, and finally the superconductivity disappears when x > 0.05. With the substitution of Te for S, the residual resistivity ρ 0 increases while the residual resistivity ratio (RRR) decreases monotonously. Meanwhile, the MR of FeS 1- x Te x is also reduced by Te doping. All these results reveal that the Te substitution introduces more impurity scattering. In consequence, the non-linear field-dependent of Hall resistivity ρ xy at low temperature region is suppressed and a linear behavior is restored upon Te doping. The negative Hall coefficients R H for all the FeS 1- x Te x samples suggest that the electron-type carrier dominates the electrical conduction. Moreover, the MR of FeS 1- x Te x obviously follows Kohler’s law, indicating the isotropic scattering rates in the Fermi surface.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2023
·
IF 3.8
Muhammad Younis,Hao Wu,Li Yang,Luji Li,Hongda Li,Wenfeng Zhang,Haixin Chang
Most of topological crystalline insulators show no presence of intrinsic ferromagnetism at and above room temperature. Here, we report the Cr0.03Pb0.02Sn0.05Te0.1 ferromagnetic crystal prepared through the modified Bridgman route that possesses intrinsic above room-temperature ferromagnetism with Tc ∼335 K and magnetic moments ∼8.85 emu/g. The presence of the anomalous Hall effect in Cr0.03Pb0.02Sn0.05Te0.1 crystals verifies above room-temperature intrinsic ferromagnetism, indicating a great potential of the Cr0.03Pb0.02Sn0.05Te0.1 crystal for many spintronic and topological devices.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
Matter
·
2025
·
IF 17.5
Li Yang,Hao Wu,Fei Guo,Gaojie Zhang,Wenfeng Zhang,Haixin Chang
Electrical control of the anomalous Hall effect (AHE) provides an important gateway to reveal and regulate topological properties of spins. However, direct, immediate electrical tuning of the AHE in materials has been elusive, unfeasible, and rarely reported. Here, we demonstrate direct, immediate, nonlinear, electric current regulation of the AHE in a single, novel, van der Waals, room-temperature, ferromagnetic, ultrathin, two-dimensional (2D) crystal for intrinsic sensitivity of nodal electronic structures induced by 2D spin-orbit coupling (SOC) in a 2D quantum limit with an ultrasmall current (∼10 2 A cm −2 ). The multivalued electrical tuning of anomalous Hall resistance (R AHE ) ( R A H E 1 R A H E 2 ∗ 100 % ) is up to 584% and remains 126% at room temperature. The squared correlation between R AHE and longitudinal resistance indicates an SOC-dominated Berry curvature-induced AHE. This immediate-current AHE with distinct dependence on the dimension, crystal layer, and electronic topology provides unique quantum platforms for probing the essence of the dimension and for low-power spintronics and brain-like quantum devices.
研究领域:
凝聚态物理
·
量子材料
·
自旋电子学
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Physics
·
2025
·
IF 9.7
Sichao Dai,Wei-Bin Wu,Wei Tang,Duo Zhao,Xiaokeng Wu,Zelong Li,Chenxu Kang,Xiaoliang Weng,Muhammad Younis,Anwar Ali,Zhimin Mao,Su-Yun Zhang,Hui Fang,Lu Qi,Jun-Yi Ge,Yu-Jia Zeng
Recent discovery of peelable van der Waals (vdW) magnets has opened new avenues for the advancement of atomic-level spintronic devices; however, their magnetic transition temperatures are typically well below room temperature. In spite of considerable explorations, including defect engineering, strain engineering, elemental doping, and the magnetic proximity effect (MPE), controllable fabrication of room-temperature vdW spintronic devices remains a great challenge. Herein, we report the growth of layered vdW Cr 0.08 Co 0.92 Cl 2 crystals, which exhibit antiferromagnetic ordering at approximately 23.4 K. Particularly, unexpected anomalous Hall effect (AHE) and spin Hall magnetoresistance (SMR) are observed in the 2D Cr 0.08 Co 0.92 Cl 2 /Pt heterostructure at a much higher temperature of 300 K. These distinctive room-temperature magnetic signals are attributed to the MPE at the Cr 0.08 Co 0.92 Cl 2 /Pt interface, which also result in a large spin Hall angle of 0.139. This study not only expands the transition metal dihalide family as 2D magnets, but also demonstrates room-temperature spintronic devices utilizing vdW magnets with otherwise low transition temperatures, paving a pathway for spintronic applications of 2D magnets.
研究领域:
材料科学
·
自旋电子学
✓ 已验证
产品关联
DOI
高影响因子
NANO LETTERS
·
2022
·
IF 12.262
Runzhe Xu,Yunhe Bai,Jingsong Zhou,Jiaheng Li,Xu Gu,Na Qin,Zhongxu Yin,Xian Du,Qinqin Zhang,Wenxuan Zhao,Yidian Li,Yang Wu,Cui Ding,Lili Wang,Aiji Liang,Zhongkai Liu,Yong Xu,Xiao Feng,Ke He,Yulin Chen,Lexian Yang
Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as the quantum anomalous Hall effect and the axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin-film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.
研究领域:
凝聚态物理
·
材料科学
·
量子物理
·
纳米技术
✓ 已验证
DOI
高影响因子
Nature Communications
·
2022
·Vol. 13
·期 1
·1-8
·
IF 17.694
Zhang Gaojie,Guo Fei,Wu Hao,Wen Xiaokun,Yang Li,Jin Wen,Zhang Wenfeng,Chang Haixin
The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications of 2D vdW crystals in next-generation low-power magnetoelectronic and spintronic devices. Here, we report a vdW intrinsic ferromagnetic crystal Fe 3 GaTe 2 that exhibits record-high above-room-temperature Curie temperature ( Tc , ~350-380 K) for known 2D vdW intrinsic ferromagnets, high saturation magnetic moment (40.11 emu/g), large PMA energy density (~4.79 × 10 5 J/m 3 ), and large anomalous Hall angle (3%) at room temperature. Such large room-temperature PMA is better than conventional widely-used ferromagnetic films like CoFeB, and one order of magnitude larger than known 2D vdW intrinsic ferromagnets. Room-temperature thickness and angle-dependent anomalous Hall devices and direct magnetic domains imaging based on Fe 3 GaTe 2 nanosheet have been realized. This work provides an avenue for room-temperature 2D ferromagnetism, electrical control of 2D ferromagnetism and promote the practical applications of 2D-vdW-integrated spintronic devices.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 31
·期 13
·2008116
·
IF 18.808
Li Yang,Hao Wu,Liang Zhang,Wenfeng Zhang,Luying Li,Tappei Kawakami,Katsuaki Sugawara,Takafumi Sato,Gaojie Zhang,Pengfei Gao,Younis Muhammad,Xiaokun Wen,Boran Tao,Fei Guo,Haixin Chang
The discovery of type-II Weyl semimetal states in layered transition metal dichalcogenides Td-WTe 2 indicates great potential for novel electronic, spintronic, and quantum devices. Theoretically, the interaction between the topological states and the magnetic ordered states of Td-WTe 2 enables the modulation of Weyl semimetal states by an external magnetic field. However, currently, ferromagnetism in layered Td-WTe 2 is still elusive and rarely observed. In this research, ferromagnetic order into WTe 2 using magnetic chromium (Cr) doping with a two-step Te flux strategy is introduced. The Curie temperature ( T c ) and the ferromagnetic moment are well tuned with a Cr doping concentration. The T c of the Cr-doped layered Td-WTe 2 could be regulated from 182 to 283 K, which is close to room temperature. The saturation magnetic moment could be changed from 2.26 to 4.20 emu g –1 , which is stronger than most values reported for these materials. Most intriguingly, the Cr-doped layered Td-WTe 2 single crystals still exhibit semimetallic behavior and they possess very large magnetoresistance with obvious Shubnikov de Haas (SdH) quantum oscillations and an anomalous Hall effect. The findings offer feasible ways to induce and tune ferromagnetic orders in layered Td-WTe 2 and thus to control its topological phase with external magnetic fields.
研究领域:
凝聚态物理
·
材料科学
·
自旋电子学
·
量子材料
·
拓扑物态
✓ 已验证
DOI
高影响因子
Science China-Materials
·
2021
·Vol. 65
·期 2
·477-485
·
IF 8.273
Li Hao,Li Yaoxin,Lian Yukun,Xie Weiwei,Chen Ling,Zhang Jinsong,Wu Yang,Fan Shoushan
As a sister compound of MnBi 2 Te 4 , the high-quality MnSb 2 Te 4 single crystals are grown via solid-state reaction where prolonged annealing and narrow temperature window play critical roles on account of its thermal metastability. Single-crystal X-ray diffraction (SCXRD) analysis on MnSb 2 Te 4 illustrates a crystal model that is isostructural to MnBi 2 Te 4 , consisting of Te-Sb-Te-Mn-Te-Sb-Te septuple layers (SLs) stacking in an ABC sequence. However, MnSb 2 Te 4 reveals a more pronounced cation intermixing in comparison with MnBi 2 Te 4 , comprising 28.9(7)% Sb antisite defects on the Mn (3a) site and 19.3(6)% Mn antisite defects on the Sb (6c) site, which may give rise to novel magnetic properties in emerging layered MnBi 2 Te 4 -family materials. Unlike the antiferromagnetic (AFM) nature in MnBi 2 Te 4 , MnSb 2 Te 4 exhibits a glassy magnetic ground state below 24 K and can be easily tuned to a ferromagnetic state under a weak applied magnetic field. Its magnetic hysteresis, anisotropy, and relaxation process are investigated in detail via static and dynamic magnetization measurements. Moreover, anomalous Hall effect as a p-type conductor is demonstrated with transport measurements. This work grants MnSb 2 Te 4 a possible access to the future exploration of exotic quantum physics by removing the odd/even layer number restraint in realizing quantum transport phenomena in intrinsic AFM MnBi 2 Te 4 -family materials, as a result of the crossover between its magnetism and potential topology arising from the Sb-Te layer.
研究领域:
凝聚态物理
·
材料科学
·
磁学
·
量子输运
·
晶体化学
✓ 已验证
DOI
高影响因子
npj 2D Materials and Applications
·
2024
·Vol. 8
·期 1
·1-7
·
IF 9.1
Wang Mingjie,Lei Bin,Zhu Kejia,Deng Yazhou,Tian Mingliang,Xiang Ziji,Wu Tao,Chen Xianhui
Two-dimensional (2D) magnetic materials are of not only fundamental scientific interest but also promising candidates for numerous applications. However, so far only a few intrinsic magnets with long-ranged order down to the 2D limit have been experimentally established. Here, we report that the intrinsic 2D ferromagnetism can be realized in van der Waals (vdW) Fe 3 GaTe 2 nanoflake down to monolayer. By measuring the Hall resistance and magnetoresistance, we demonstrate that the Fe 3 GaTe 2 monolayer exhibits 2D hard ferromagnetism with record-high Cure temperature ( T c ) of 240 K for the monolayer of known intrinsic ferromagnets. Both of square-shaped hysteresis loops with near-vertical jump in anomalous Hall effect (AHE) and the negative magnetoresistance (NMR) behavior with an applied out-of-plane magnetic field reveal robust perpendicular magnetic anisotropy (PMA) in Fe 3 GaTe 2 nanoflakes down to the monolayer limit. Furthermore, we find the intrinsic mechanism that stems from the Berry curvature of electronic bands dominates AHE of nanoflakes in the low temperature range. Our results not only provide an excellent candidate material for next-generation spintronic applications, but also open up a platform for exploring physical mechanisms in 2D ferromagnetism.
研究领域:
凝聚态物理
·
材料科学
·
纳米技术
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry C
·
2022
·
IF 4.177
Yafang Li,Wang Li,Jiawei Lin,Zhongnan Guo,Fan Sun,Xin Chen,Yubo Luo,Junyou Yang,Wenxia Yuan
The ferromagnetic shandite Co3Sn2S2 has attracted great attention in physics and chemistry communities owing to its Kagome net, magnetism, and topological property. Here, for the first time, we report the effect of Sb doping on the crystal structure, magnetic interaction, and transport behavior of this ferromagnetic Weyl semimetal. A relatively low doping limit has been determined as x = 0.1 in a Co3Sn2–xSbxS2 system. Single-crystal X-ray diffraction indicates that the Sb doping shows a preferred occupation at the Sn sites between Kagome layers (Sn(1)) rather than the intralayer sites (Sn(2)), leading to the anisotropic contraction of the lattice. The ferromagnetic interaction is weakened upon Sb doping with the Curie temperature decreased from 172 to 146 K, which resulted from the shifting of the Fermi level toward high energy. Due to the electron injection, the Sb-doped sample shows the declined thermoelectric property with the reduced absolute value of the Seebeck coefficient compared to the parent compound. The anomalous Hall effect is still maintained in Co3Sn1.9Sb0.1S2 with the increased anomalous Hall resistivity based on the measurement on polycrystalline samples. Our work provides a new electron doping system to understand the interplay between the magnetism and quantum properties of this Weyl semimetal.
研究领域:
材料科学
·
物理学
·
化学
✓ 已验证
DOI
高影响因子
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS
·
2024
·
IF 4.2
Zhiwen Wang,Ziqi Wang,Yang Liu,Hongyu Zhao,Bowei Li,Qianyu Guo,Aokai Xu,Hongan Ma,Liangchao Chen,Xiaopeng Jia
Diamond, as a wide-bandgap semiconductor, is expected to enable miniaturized applications for high-frequency and high-power electronics. One of the problems affecting the application of boron-doped diamond (BDD) lies in the inhomogeneous distribution of their boron impurities. This article reports the synthesis of BDDs in the Fe-Ti-B-C system. The growth sectors as well as the depth distribution characteristics of boron impurities were focused on. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy demonstrated that the boron content decreases along the (111), (113), and (100) directions in the growth sectors. Raman and Hall effect measurements of the crystals before and after polishing showed a higher boron content on the surface of the BDD than that of in the interior. The results of X-ray Photoelectron Spectroscopy (XPS) depth profiling responded that the contents of both B C and B O bonds on its surface decreased with the increase of etching depth. This work is an important reference for predicting the distribution pattern of boron impurities, which will be of great significance for the modernization and implementation of BDDs.
研究领域:
材料科学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2025
·Vol. 37
·期 20
·2405686
·
IF 26.8
Heng Zhang,Yiying Zhang,Yong Zhang,Bo Chen,Jingwen Guo,Yu Du,Jiajun Li,Fuwei Zhou,Fengyi Guo,Yongxin Zhang,Zixiang Zhao,Hangkai Xie,Zhixin Zhang,Tianqi Wang,Wuyi Qi,You Song,Fucong Fei,Xuefeng Wang,Fengqi Song
MnBi 2n Te 3n+1 is a representative family of intrinsic magnetic topological insulators, in which numerous exotic phenomena such as the quantum anomalous Hall effect are expected. The high-quality crystal growth and magnetism manipulation are the most essential processes. Here a modified chemical vapor transport method using a feedback-regulated strategy is developed, which provides the closed-loop control of growth temperature within ± 0.1 °C. Single crystals of MnBi 2 Te 4 , MnBi 4 Te 7 , and MnBi 6 Te 10 are obtained under different temperature intervals respectively, and show variable tunability on magnetism by finely tuning the growth temperatures. Specifically, the cold-end temperatures not only vary the strength of antiferromagnetic coupling in MnBi 2 Te 4 , but also induce magnetic ground state transitions from antiferromagnetism to ferromagnetism in MnBi 4 Te 7 and MnBi 6 Te 10 . In MnBi 2 Te 4 with optimized magnetism, quantized transport with Chern insulator state can be easily replicated. These results provide a systematic picture for the crystal growth and the rich magnetic tunability of MnBi 2n Te 3n+1 family, providing richer platforms for the related researches combining magnetism and topological physics.
研究领域:
凝聚态物理
·
拓扑材料
·
晶体生长
·
磁性
·
量子输运
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）