Compositional modification for efficient near-room-temperature Ag2Se thermoelectrics through modulation decoration of amorphous Sb2S3
Compositing a secondary phase in Ag 2 Se can usually tune the electron and phonon scattering to improve the thermoelectric performance. However, the intrinsically high carrier concentration still limits the performance optimization. Here, we employ a modulation decoration strategy to simultaneously achieve submicron-scale constituents and compositional modification for synergistic optimization of thermoelectric properties . Amorphous nano Sb 2 S 3 has been decorated on the surface of Ag 2 Se powders, and S was added into the Ag 2 Se matrix through an ion exchange reaction accompanied by the formation of a crystal/amorphous mixed secondary phase of Sb 2 (S, Se) 3 . The S doping reduced the excessive intrinsic carrier concentration, leading to modified electrical transport properties and significantly reduced electrical thermal conductivity. On the other hand, introducing the S dopants and the crystal/amorphous interfaces into the Ag 2 Se matrix could increase the lattice anharmonicity, further contributing to the reduced thermal conductivity. Consequently, the Ag 2 Se-0.4 % Sb 2 S 3 sample obtains a high average zT value of > 1 in the temperature range of 300–390 K. In addition, the maximum cooling temperature difference of over 85 K can be predicted in an Ag 2 Se/Ag 2 Se-0.4 % Sb 2 S 3 segregated module at the hot side temperature of 350 K.
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