ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Zhi-Hong Zhang,Shan-Shan Yan,Yu-Long Chen,Zhen-Dong Lian,Ai Fu,You-Chao Kong,Lin Li,Shi-Chen Su,Kar-Wei Ng,Zhi-Peng Wei,Hong-Chao Liu,Shuang-Peng Wang
The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal–semiconductor–metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.
研究领域:
材料科学
·
光子学
·
纳米技术
·
电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·Vol. 35
·期 50
·e10929
·
IF 19
Yuxin Luo,Huihui Yu,Xiaofu Wei,Juxiu Wen,Haoran Zeng,Yue Zheng,Zheng Zhang,Xiankun Zhang,Yue Zhang
Infrared phototransistors have emerged as critical components in next-generation optoelectronic integrated circuits owing to their ultra-high responsivity. However, the high carrier concentration inherent in narrow-bandgap infrared materials poses significant challenges in suppressing dark current in room-temperature infrared phototransistors. Conventional strategies for reducing dark current, such as constructing heterojunctions, often compromise response speed. Here, a self-biased phototransistor (SBPT) architecture is reported capable of simultaneously achieving ultrahigh responsivity, ultrafast response speed, and ultralow dark current in infrared photodetection. This architecture extends the drain electrode as a series gate and constructs a tunable barrier homojunction using an air gap, which can effectively reduce dark current. Additionally, the introduction of this barrier shortens the transport distance for Te photogenerated electrons near the bottom double electrodes, optimizes carrier transport and collection, and enhances the photoelectric response speed. The built Te-based SBPT demonstrated the 0.6 nA room temperature dark current and the ultrafast response speed of 7.9 µs, both of which surpass previously reported Te-based phototransistors. Moreover, the SBPT detector obtained a sharp edge image at short-wave infrared, and the edge rise rate is 94.26. The SBPT architecture demonstrates cross-material compatibility with diverse semiconductor systems, thereby establishing a proof-of-concept for ultralow-power and high-speed optoelectronic devices.
研究领域:
光电子学
·
半导体器件
·
红外探测
·
纳米电子学
·
集成光子学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2024
·
IF 4.8
Wenfeng Sun,Shaolong Liu,Caizheng Wang,Xiaotao Zu,Sean Li,Xia Xiang
Lead-free perovskites are considered to be candidates for next-generation photodetectors, because of their excellent charge carrier transport properties and low toxicity. However, their application in integrated circuits is hindered by their inadequate performance and size restrictions. To aim at the development of lead-free perovskite-integrated optoelectronic devices, a CsAg2I3/silicon (CAI/Si) heterojunction is presented in this work by using a spatial confinement growth method, where the in-plane growth of CAI microbelts with high-quality single-crystal characteristics is primarily dependent on the concentration of surrounding precursor solution. The fabricated photodetectors based on the CAI/Si heterojunctions exhibit a broad-spectrum detection capability in the ultraviolet–visible–near-infrared (UV-vis-NIR) range. In addition, the photodetectors show good photoelectric detection performance, including a maximum responsivity of 48.5 mA/W and detectivity of 1.13 × 1011 Jones, respectively. Besides, the photodetectors have a rapid response of 6.5/224 μs and good air stability for over 2 months. This work contributes a new idea to design next-generation optoelectronic devices with high integration density.
研究领域:
材料科学
·
光电子学
·
半导体器件
·
纳米技术
·
光电探测
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）