In this work, Tm:YAG (Tm:${{\rm Y}_3}{{\rm Al}_5}{{\rm O}_{12}}$) ceramic-derived multimaterial fiber was fabricated by using the molten core method, which has a high gain per unit length of 2.7 dB/cm at 1950 nm. To our knowledge, this is the highest gain per unit length at 2 µm band in similar Tm:YAG-derived multimaterial fibers. A distributed Bragg reflector (DBR) fiber laser was built based on a 10-cm-long as-drawn fiber. The achieved 1950 nm laser, which has a maximum output power of $\sim{240}\;{\rm mW}$ and a slope efficiency of 16.5%, was pumped by a self-developed 1610 nm fiber laser. What is more, an all-fiber-integrated passively mode-locked fiber laser based on the 10-cm-long as-drawn fiber was realized. The mode-locked pulses operate at 1950 nm with duration of $\sim{380}\;{\rm ps}$, and the repetition rate is 26.45 MHz. The results described here indicate that the Tm:YAG ceramic-derived multimaterial fiber with high gain per unit length has promising applications in 2 µm all-fiber fiber lasers.
Gang He,Wendong Li,Zhaoqi Sun,Miao Zhang,Xiaoshuang Chen
Recently, much attention has been paid to the investigation of solution-driven oxides for application in thin film transistors (TFTs). In current study, a fully solution-based method, using 2-methoxyethanol as solvent, has been adopted to prepare InZnO thin films and HfAlOx gate dielectrics. Amorphous HfAlOx thin films annealed at 600 °C have shown a high transparency (>85%), low leakage current density (6.9 × 10−9 A cm−2 at 2 MV cm−1), and smooth surface. To verify the potential applications of HfAlOx gate dielectrics in oxide-based TFTs, fully solution-induced InZnO/HfAlOx TFTs have been integrated. Excellent electrical performance for InZnO/HfAlOx TFTs annealed at 450 °C has been observed, including a low operating voltage of 3 V, a saturated mobility of 5.17 cm2 V−1 s−1, a high Ion/Ioff of ∼106, a small subthreshold swing of 87 mV per decade, and a threshold voltage shift of 0.52 V under positive bias stress (PBS) for 7200 s, respectively. In addition, time dependent threshold voltage shift under PBS could be described by a stretched-exponential model, which can be due to charge trapping in the semiconductor/dielectric interface. Finally, to explore the possible application in logic operation, a resistor-loaded inverter based on InZnO/HfAlOx TFTs has been built and excellent swing characteristic and well dynamic behavior have been obtained. Therefore, it can be concluded that fully solution-driven InZnO/HfAlOx TFTs have demonstrated potential application in nontoxic, eco-friendly and low-power consumption oxide-based flexible electronics.
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