High-melting-temperature solid triacylglycerol (TAG) is the main source of controversy with regard to the nutritional assessment of milk fat. This study investigated the microscopic changes and hydrolysis kinetics of milk fat globules (MFGs) reconstituted with butterfat and its primary fractions (30S, 20S, and 20L) during in vitro digestion. The 30S, 20S, and 20L on behalf of high-, medium- and low-melting-temperature fractions, respectively, had well-distinguished melting temperatures (42.1, 38.9, and 22.0 °C) and long-chain saturated TAG contents (19.3, 3.2, and 1.8%). The results revealed that the gastrointestinal fate of these butterfat fractions varied greatly with their TAG composition, and the gastric phase was a sensitive target in terms of the physiological site. The 20S- and 30S-reconstituted MFG emulsions during gastric digestion compared to that of 20L had higher extensive aggregation, lower hydrolysis extent (29.8, 28.0, and 57.3%, respectively), and slower apparent hydrolysis rate constants k (2.4, 2.1, and 6.1 min–1, respectively).
An urgent demand for electronic and optoelectronic devices able to work in extreme environments promotes a series of research studies on semiconductor materials. Cubic boron phosphide (BP) as a semiconductor material with excellent characteristics shows great application potential. However, since the synthesis conditions required are difficult to achieve and the growth mechanism of BP is still unclear, there are few reports on the basic properties of BP and pure isotope BP, resulting in a narrow understanding of their special physical properties. Here, we successfully obtained highly pure isotopic 10BP crystals by a vapor–liquid–solid (VLS) method unconventionally designed, which successfully overcomes the thermodynamic conflict between the high melting point of the boron element and low sublimation temperature of the phosphorus element. The 10BP achieved owns an aspect ratio as high as 104 and a hardness up to 41 GPa. Besides, as an indirect bandgap semiconductor, it has ultrawide red emission spectra, a p-type conductivity with extremely low resistivity, and excellent photoelectronic and piezoelectric characteristics. Furthermore, compared with other superhard semiconductors like cubic BN and diamond, 10BP has an obvious advantage of lower growth temperature (1200 °C). All these characteristics confirm the prospects owned by 10BP in its applications to the field of high-conductivity, optoelectronic, strain-sensing, and superhard semiconductors.
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