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Nature Energy · 2025 · IF 60.1

Solution-processed kesterite solar module with 10.1% certified efficiency

Xiang Chunxu,Yuan Mingjun,Ding Chuan’an,Zheng Yuanyuan,Li Yize,Hu Xiaole,Zhang Jie,Li Xinyu,Ma Chengfeng,Wang Shaoying,Yan Weibo,Yang Chunlei,Huang Wei,Xin Hao

Solution processing has great advantages for emerging thin-film solar cells but remains a big challenge for multielemental inorganic films due to complicated phase evolution and grain growth during crystallization. Here we report the fabrication of uniform, large-area Cu 2 ZnSn(S,Se) 4 (CZTSSe) films and solar modules from solution. By tuning the thiourea/metal ratio to increase film porosity—thereby promoting more uniform vertical reaction and lateral grain growth—we improved the uniformity of CZTSSe films and achieved a single-cell efficiency of 13.4% and a solar module efficiency of 8.91%. We further optimized the module structure to reduce non-ideal contact and patterning-induced shunt and resistive losses, resulting in a champion CZTSSe module with a National Renewable Energy Laboratory-certified efficiency of 10.1%. This module also exhibits the lowest cell-to-module loss in open circuit voltage and current density among state-of-the-art emerging thin-film solar modules. Our work demonstrates the viability of solution processing to deposit uniform, large-area CZTSSe film and efficient solar modules, advancing the development of the technology.

研究领域: 材料科学 · 光伏技术 · 薄膜太阳能电池 · 无机功能材料 · 能源材料
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING · 2024 ·Vol. 130 ·期 3 ·1-11 · IF 2.5

Comparative study on the effects of substitutional Ag and substitutional Ge on kesterite thin-film solar cells

Hu Jiaming,Han Xiuxun,Zhu Wuzhi,Wu Fangfang,Tan Xiaohui

Incorporating substitutional elements from groups I, II and IV is an important approach to improve the quality of kesterite thin films. Among the elements, Ag and Ge are most effective in promoting the performance of Cu 2 ZnSn(S,Se) 4 solar cells. Although several theoretical and experimental studies have been conducted on the Ag/Ge-alloyed kesterite, there are significant differences in the reported morphological characteristics, photovoltaic performance and even the optimal Ag/Ge substitution ratio due to different preparation processes utilized, which leads to difficulties in comparing the Ag-incorporated and Ge-incorporated kesterite solar cells. Currently, there is little literature on the comparative study concerned. Herein, we fabricated Ag-alloyed and Ge-alloyed kesterite solar cells based on the same solution method and process conditions, and laterally compared the effects of Ag substitution and Ge substitution on the phase compositions, morphologies, optical bandgaps, minority carrier lifetime and device performance of kesterite Cu 2 ZnSn(S,Se) 4 thin films.

研究领域: 材料科学 · 光伏技术 · 薄膜技术 · 固体物理 · 半导体器件
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Carbon Energy · 2025 ·Vol. 7 ·期 5 ·e70001 · IF 24.2

Tailoring a Back-Contact Barrier for a Self-Powered Broadband Kesterite Photodetector With Ultralow Dark Current Enabling Ultra-Weak-Light Detection

Qianfeng Wu,Chuanhao Li,Shuo Chen,Zhenghua Su,Muhammad Abbas,Chao Chen,Qianqian Lin,Jingting Luo,Liming Ding,Guangxing Liang

Visible and near-infrared photodetectors are widely used in intelligent driving, health monitoring, and other fields. However, the application of photodetectors in the near-infrared region is significantly impacted by high dark current, which can greatly reduce their performance and sensitivity, thereby limiting their effectiveness in certain applications. In this work, the introduction of a C 60 back interface layer successfully mitigated back interface reactions to decrease the thickness of the Mo(S,Se) 2 layer, tailoring the back-contact barrier and preventing reverse charge injection, resulting in a kesterite photodetector with an ultralow dark current density of 5.2 × 10 −9 mA/cm 2 and ultra-weak-light detection at levels as low as 25 pW/cm 2 . Besides, under a self-powered operation, it demonstrates outstanding performance, achieving a peak responsivity of 0.68 A/W, a wide response range spanning from 300 to 1600 nm, and an impressive detectivity of 5.27 × 10 14 Jones. In addition, it offers exceptionally rapid response times, with rise and decay times of 70 and 650 ns, respectively. This research offers important insights for developing high-performance self-powered near-infrared photodetectors that have high responsivity, rapid response times, and ultralow dark current.

研究领域: 光电子学 · 光探测器 · 材料科学 · 半导体器件 · 可再生能源
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