Frontiers in Chemistry
·
2022
·
IF 5.545
Lei Yuxi,Xiao Xuefeng,Ma Tianpeng,Li Weiyin,Zhang Huan,Ma Chao
Layered transition metal dichalcogenides (TMDs), such as molybdenum ditelluride (MoTe2), have attracted much attention because of their novel structure-related physicochemical properties. In particular, semi-metallic-phase MoTe2 (1T′) is considered as a competitive candidate for low-cost electrocatalysts for water splitting. However, there are few reports on the simple hydrothermal synthesis of MoTe2 nanostructures compared with other layered TMDs. In this study, a facile one-step hydrothermal process was developed for the fabrication of layered MoTe2, in which uniform nanotubes with a few layers of 1T′ MoTe2 were fabricated at a lower temperature for the first time. The as-obtained MoTe2 nanotubes were fully characterized using different techniques, which revealed their structure and indicated the presence of layered 1T′ nanocrystals. The efficient activity of MoTe2 nanotubes for the electrocatalytic hydrogen evolution reaction (HER) in 0.5 M H2SO4 was demonstrated by the small Tafel slope of 54 mV/dec−1 and endurable ability, which is attributed to the abundant active sites and remarkable conductivity of 1T′ MoTe2 with a few-layer feature. This provides a facile method for the design and construction of efficient layered MoTe2 based electrocatalysts.
研究领域:
材料科学
·
电化学
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Enzi Chen,Qing Zhu,Yaoyu Duan,Junhao Tang,Runze Zhan,Jingwen Huang,Xi Wan,Kun Chen,Shaozhi Deng
Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to integrate ultrathin high-κ dielectric directly on 1T′-MoTe2 surfaces, facilitating the creation of high-performance back-gated field-effect transistors (FETs). Exploiting 1T′-MoTe2’s natural oxidation in ambient conditions, we directly deposit dense and uniform HfO2 dielectric films below 5 nm, achieving an equivalent oxide thickness (EOT) of 0.97 nm. The resulting back-gate transistors, with a monolayer MoSSe on HfO2/1T′-MoTe2, show a current on/off ratio over 105 and operate at low voltages (<1 V), indicating high gating efficiency and a charge carrier mobility of 2.93 cm2V–1s–1. Additionally, we demonstrate a 6 × 5 bottom-gated array of MoSSe transistors using all-1T′-MoTe2 electrodes, achieving an 86.7% sample yield. Our approach also enables the creation of various integrated logic circuits such as inverters, NAND, and NOR gates. This research offers a feasible method for integrating high-κ dielectric films using industrially compatible ALD processes, providing excellent thickness control, uniformity, and scalability for 2D electronic devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small Structures
·
2022
·Vol. 3
·期 9
·2200025
·
IF 11.343
Tao Xu,Shouheng Li,Aolin Li,Yue Yu,Hui Zhang,Ping Hu,Wenzhe Zhou,Liping Sheng,Tian Jiang,Haifeng Cheng,Xiang'ai Cheng,Fangping Ouyang,Jin Zhang,Shanshan Wang
Alloying is widely applied to tailor properties of 2D materials. Herein, a space-confined chemical vapor deposition (CVD) strategy to homogeneously grow 100 μm-sized monolayer 1T’-MoTe 2 in batches is developed. Aberration-corrected annular dark-field scanning transmission electron microscopy combined with density functional theory calculations is applied to investigate the atomic structural alteration of 1T’-MoTe 2 alloyed with sulfur. 1T’-to-2H phase transition is observed, triggered by both thermodynamic (stability improvement) and kinetic (phase transition barrier reduction) reasons. The alloying degrees of MoS 2 x Te 2(1− x ) grown at different temperatures display homophilic and random configurations, respectively, providing a feasible approach to tailor the atomic mixture of the alloying elements. The intralayer reconstruction and the interlayer displacement take place as defect concentration increases at elevated alloying temperatures. In contrast, 1T’-MoTe 2 displays high susceptibility in the presence of oxygen. An encapsulation method is developed using CVD-grown monolayer MoS 2 , extending the lifetime of monolayer tellurides from several minutes to at least 24 h. These results gain fundamental insights into the structural change in both the beneficial (sulfurization) and detrimental (oxidation) alloying processes of atomically thin 1T’-MoTe 2 and provide a new degree of freedom for the controllable growth of 2D alloys (i.e., tailoring the alloying degree).
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2016
·Vol. 5
·期 3
·1035-1042
·
IF 8.262
Ming Liu,Zhaojie Wang,Junxue Liu,Guijuan Wei,Jiao Du,Yanpeng Li,Changhua An,Jun Zhang
The synthesis of layered transition metal dichalcogenide nanocrystals with excellent properties in energy conversion and storage has been well documented in the past several years. However, due to the metallic character of Te, the realization of the chemical synthesis of uniform well-defined MoTe2 nanostructures still remains a challenge, especially to achieve metastable 1T′-MoTe2. In this work, we have developed a colloidal chemical strategy for the synthesis of ultrathin 1T′-MoTe2 nanosheets. The as-achieved sample was characterized by a layered-expanded feature with an interlayer distance of 0.723 nm and rich defects. The shapes of 1T′-MoTe2 can be controlled by varying Mo precursors and the reaction atmosphere, where CO plays an essential role in determining the nanosheet feature. Interestingly, the optimized few-layer 1T′-MoTe2 nanosheets can be used as an efficient supercapacitor electrode with specific capacitances of 1393 F g−1 and 714 F g−1 at current densities of 1 A g−1 and 100 A g−1, respectively. An asymmetric 1T′-MoTe2//activated carbon supercapacitor exhibits a maximum specific capacitance of 158.9 F g−1 with an energy density up to 56.4 W h kg−1. To the best of our knowledge, it is the first time that ultrathin MoTe2 nanosheets have been used as ideal electrode materials for supercapacitors. The present work highlights a facile synthetic strategy to realize uniform transition metal telluride nanostructures for enhancing their electrochemical performances.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
Applied Materials Today
·
2026
·
IF 7
Tongtong Kang,Changyong Lan,Shuren Zhou,Xinyi Luo,Xiaoqi Gao,Haodong Fan,Yi Yin,Chun Li
1T’-MoTe 2 /flat-Si and 1T’-MoTe 2 /pyramidal-Si heterojunction photodetectors were in-situ fabricated. • The MoTe 2 /pyramidal-Si heterojunction photodetector exhibits 31% enhancement in responsivity compared with the MoTe 2 /flat-Si counterpart. • The MoTe 2 /pyramidal-Si heterojunction photodetector exhibits broadband spectral response (400-1550 nm), high responsivity (451 mA/W), high specific detectivity (7.8 × 10 11 Jones), and fast response (4 μs). • An 8 × 8 photodetector array is fabricated and demonstrates good imaging capability. Mixed van der Waals (vdW) heterojunction photodetectors have attracted considerable attention in recent years due to synergistic effects of component materials with different dimensions, which enable enhanced performance. Among these mixed vdW heterojunctions, two-dimensional (2D) material/Si heterojunction photodetectors hold great promise, combining the superior optoelectronic properties of 2D materials with the mature processing technology of Si. In this work, we report the fabrication of a 1 T′-MoTe 2 /pyramidal-Si heterojunction photodetector via sputtering and subsequent in-situ thermal conversion. Compared with the MoTe 2 /flat-Si counterpart, the MoTe 2 /pyramidal-Si photodetector shows a 31% enhancement in responsivity, reaching 451 mA/W at 820 nm. In addition, it exhibits excellent photodetection performance in terms of specific detectivity (7.8 × 10 11 Jones at 850 nm under zero bias), broadband spectral response (400–1550 nm), large linear dynamic range (162 dB), and fast response (4 μs at 850 nm under a bias voltage of −5 V). An 8 × 8 photodetector array is fabricated and demonstrates good imaging capability. Our work provides a novel approach for developing high-performance mixed vdW heterojunction photodetectors. Download: Download high-res image (207KB) Download: Download full-size image
✓ 已验证
DOI
高影响因子
Nature Communications
·
2021
·Vol. 12
·期 1
·1-10
·
IF 14.919
Zhang Xiankun,Liu Baishan,Gao Li,Yu Huihui,Liu Xiaozhi,Du Junli,Xiao Jiankun,Liu Yihe,Gu Lin,Liao Qingliang,Kang Zhuo,Zhang Zheng,Zhang Yue
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T′-MoTe 2 and the semiconducting monolayer MoS 2 . We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS 2 , the Schottky barrier width can be effectively enlarged by 59%. The 1 T′-MoTe 2 /healed-MoS 2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 10 5 , and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.
研究领域:
材料科学
·
纳米技术
·
半导体物理
·
器件工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Nano
·
2025
·
IF 16
Yao Yao,Yue Zhao,Huijuan Zhang,Wenting Pan,Wei Liang,Yijian Jiang,Xinlong Yan,Yinzhou Yan
The development of surface-enhanced Raman spectroscopy (SERS) as an ultrasensitive fingerprint analysis technique in precision medicine requires high-performance SERS substrates with controllable nanostructure (hot-spot) distribution, simple fabrication, superior stability, biocompatibility, and extraordinary optical responses. Unfortunately, fabrication of arbitrary nanostructures with high homogeneity on a large scale for SERS is still challenging. Herein, we report an ultrafast laser parallel fabrication protocol for Au/2D-transition-metal dichalcogenide hybrid SERS biosensors. The leveraged photonic nanojets (PNJs) are generated by a micron-sized microsphere monolayer to simultaneously trigger localized phase transition in 2H-MoTe2, achieving a 1T′-MoTe2 nanopattern array with a density of 1 million per mm2 by a single laser shot. The Au nanoparticle clusters (AuNCs) are subsequently grown in situ from the 1T′ regions, creating a AuNCs on 1T′/2H-MoTe2 (AuNCs@1T’/2H-MoTe2) hybrid SERS substrate. The fabricated feature diameter and overlay accuracy of the patterned AuNCs are 210.1 ± 3.4 and 9.2 ± 1.7 nm, respectively. To eliminate background noise, we designed dimer-AuNCs@1T′/2H-MoTe2 (dAuNCs@1T′/2H-MoTe2), achieving a detection limit of 10–13 M with an enhancement factor of 4.9 × 108 for the methylene blue (MB) analyte. The strong localized surface plasmon resonances in the dAuNCs as well as efficient charge transfers between Au, 2H-MoTe2, and MB contribute to the majority of Raman enhancement. The multiscale dAuNCs@1T′/2H-MoTe2 array provides a powerful SERSome (comprising multiple SERS spectra) platform for therapeutic drug monitoring, by which we successfully identified the metabolic behaviors of living gastric adenocarcinoma cells administered with two drugs, i.e., capecitabine, oxaliplatin, and their combination. The present work establishes opportunities for creating a highly ordered nanopattern array for ultrasensitive SERSome analysis of cell metabolism in cancer therapy.
研究领域:
纳米技术
·
生物医学工程
·
分析化学
·
癌症研究
·
材料科学
·
光学与光子学
·
精准医学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）