Two-dimensional (2D) ReS 2 has received widespread attention because of its unique anisotropic properties, weak interlayer interactions and broad application prospects. Therefore, the controllable and repeatable growth of 2D ReS 2 flakes is very important for studying their properties and practical applications. In this work, 2D single-crystalline ReS 2 flakes with different layer numbers were synthesized on mica substrates using chemical vapor deposition (CVD) by adjusting the distance between the mica substrate and Re source, and the growth mechanism was further discussed. The fluorescence quenching effect and surface-enhanced Raman scattering (SERS) effect of 2D ReS 2 flakes were investigated using rhodamine B (RhB), crystal violet (CV) and malachite green (MG) dye molecules as Raman probes. The results show that the fluorescence quenching effect and SERS effect of 2D ReS 2 flakes are enhanced with decreasing layer number. The lowest detection limits on monolayer ReS 2 flake substrates are 10 −10 M, 10 −9 M and 10 −8 M for RhB, CV and MG under 532 nm laser excitation, respectively. 2D ReS 2 flakes used as a sensitive SERS-active substrate have excellent uniformity and stability. The surface Raman enhancement mechanism of 2D ReS 2 flakes was discussed.
Zhijun Lai,Shiya Rong,Shule Huang,Moran Qin,Jieming Huang,Xuyan Zhang,Zhang Zhang,Junming Liu
All-solid-state flexible supercapacitors with high-efficiency and durable performance show a promising application prospect in wearable electronics, electrochemical energy storage. However, it still exists challenges to integrate flexible, efficient and stable performance for all-solid-state supercapacitor. In this work, we have synthesized the ultra-high density ReS 2 nanosheets on the porous carbon framework (ReS 2 @PCF) by a hydrothermal method . Based on ReS 2 @PCF, we have further prepared a ReS 2 @PCF-based supercapacitor device. Electrochemical measurements demonstrate that the flexible ReS 2 @PCF electrode possesses a specific capability of 125.3 F/g and also a large power density of 10.278 kW/kg at a charge/discharge current density of 5 A/g, which is able to light up a red light-emitting diodes (LED). Moreover, it keeps a high 91.5% capacitance retention ratio after being tested for 6000 cycles. Our work offers a new insight into the solutions for the integration of flexible, highly efficient and stable supercapacitor. It shows a potential application in special cases, such as wearable electronic clothes, and it will also facilitate their development towards a practical application.
Jun Gou,Xiutao Yang,Hang Yu,He Yu,Yuchao Wei,Ziyi Fu,Laijiang Wei,Zexu Wang,Jiayue Han,Zhiming Wu,Yadong Jiang,Jun Wang
Conventional nm-scale Bi 2 O 2 Se-based near-infrared (NIR) photodetectors (PDs) exhibit commendable performance in terms of responsivity and response speed. Currently, the growing complexity of application scenarios requires NIR PDs to possess not only these fundamental functionalities but also the capability for NIR polarization detection and operation well under dim light conditions. Here, this study proposes the 2D ReS 2 /3D Bi 2 O 2 Se homo-heterojunction PD, which exhibits high photo-response speed, polarization-sensitive detection capabilities, and enhanced sensitivity in the NIR spectrum. In detail, a device constructed from µm-thick Bi 2 O 2 Se demonstrates polarization-sensitive photodetection at a wavelength of 850 nm, exhibiting a polarization ratio of 1.4 achieved by applied voltage modulation. Based on photogating effect and strong intrinsic absorption, the homo-heterojunction PD also can detect light power level of nW at 1310 nm, with a response speed of ≈10 µs and responsivity of 34.8 A W −1 at this wavelength. Additionally, this configuration exhibits an outstanding specific detectivity exceeding 10 10 Jones within the wavelength range of 700 to 1310 nm. Even at a cut-off wavelength of 1550 nm, the device achieves a specific detectivity of ≈10 9 Jones. The ReS 2 /Bi 2 O 2 Se heterojunction NIR PD shows promise for advanced optoelectronic applications due to its high sensitivity and polarization-sensitive photodetection in NIR band.