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ADVANCED MATERIALS · 2023 · IF 29.4

Sugar-Derived Nanocrystalline Graphite Matrix C/C Composites with Excellent Ablative Resistance at 3000 °C

Wenzheng Zhang,Mingyi Tan,Daming Chen,Boqian Sun,Yuan Cheng,Liancai Xun,Jingsheng Hu,Chenlin Hou,Yuxuan Liu,Yuhao Fang,Ping Hu,Wenbo Han,Shun Dong,Shanyi Du,Jiecai Han,Shuxi Miao,Qidong Yang,Yanchun Zhou,Xinghong Zhang

Sugars are renewable resources essential to human life, but they are rarely used as raw materials for the industrial production of carbon-based materials, especially for the preparation of carbon fiber-reinforced carbon-matrix (C/C) composites, which are extremely useful for the semiconductor and aerospace sectors. Herein, a method utilizing sugar-derived carbon to replace petrochemicals as dense matrix to preparing C/C composites is reported. The matrix from sugar-derived C/C (S–C/C) composites has a nanocrystalline graphite structure that is highly thermally stable and effectively bonded to the carbon fibers. The mechanical properties of the S–C/C composite are comparable to those prepared from petrochemical sources; significantly, it exhibits a linear ablation rate of 0.03 mm s −1 after 200 s of ablation at 3000 °C in 10 MW m −2 heat flux. This new class of S–C/C is promising for use in a broad range of fields, ranging from semiconductor to aerospace.

研究领域: 材料科学 · 航空航天工程
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SOLID STATE COMMUNICATIONS · 2021 · IF 1.804

Growth of millimeter-size single-crystal boron phosphide by eutectic melt at 5.0 GPa and 3000 °C

Wenjia Liang,Lu Zhang,Xiaojun Xiang,Junpu Wang,Liu Zhang,Binbin Wu,Yipeng Wang,Yan Zeng,Shixue Guan,Qiqi Tang,Fang Peng

Single-crystal boron phosphide (BP), a high-temperature semiconductor, is prepared by a eutectic melting method. Large BP single crystals (>1 mm) are synthesized at high pressure and high temperature (5.0 GPa and 3000 °C). Their growth mechanism is analyzed. Ultraviolet–visible spectroscopy and thermogravimetry/differential thermal analysis show that BP is an indirect semiconductor (2.01 eV) and has excellent thermal stability (>1200 °C). Success in the synthesis of good BP crystals offers a huge opportunity to determine their intrinsic properties and will also stimulate more research on their performance as semiconductors.

CAS / MDL: 7440-42-8 7723-14-0
研究领域: 材料科学 · 半导体物理
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