ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Abubakar Yakubu Haruna,Yubo Luo,Wang Li,Zheng Ma,Tian Xu,Qinghui Jiang,Junyou Yang
Bismuth telluride-based (Bi2Te3) alloys have long been considered the best thermoelectric (TE) materials at room temperature. However, the n-type Bi2Te3 alloys always exhibit poor thermoelectric performance than their p-type counterpart, which severely limits the energy conversion efficiency of thermoelectric devices. Here, we demonstrate that incorporating AgBiSe2 can concurrently regulate the electrical and thermal transport properties as well as improve the mechanical performance of n-type Bi2Te2.69Se0.33Cl0.03 for high thermoelectric performance. Among these, AgBiSe2 effectively enhanced the Seebeck coefficients of n-type Bi2Te2.69Se0.33Cl0.03 due to the reduced carrier concentration and reduced the thermal conductivity of n-type Bi2Te2.69Se0.33Cl0.03 owing to the enhanced phonon scattering by AgBiSe2 as well as its low thermal conductivity nature. Consequently, the simultaneous optimization of electrical and thermal transport properties enables us to achieve a maximum ZT of ∼1.21 (at ∼353 K) and an average ZTave of ∼1.07 (300–433 K) for 3.5 wt % AgBiSe2-incorporated Bi2Te2.69Se0.33Cl0.03, which are ∼25.62 and ∼23.36% larger than those of Bi2Te2.69Se0.33Cl0.03, respectively. This work proves that the incorporation of AgBiSe2 is an efficient way to improve the thermoelectric performance of bismuth telluride-based materials.
研究领域:
材料科学
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能源技术
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高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Abubakar Yakubu Haruna,Yubo Luo,Zheng Ma,Wang Li,Haiqiang Liu,Xin Li,Qinghui Jiang,Junyou Yang
The thermoelectric performance of n-type Bi2Te3 needs further enhancement to match that of its p-type Bi2Te3 counterpart and should be considered for competitive applications. Combining Cu/Cl and multiscale additives (AgBiSe2) presents a suitable route for such enhancement. This is evidence of the enhanced thermoelectric performance of Bi1.995Cu0.005Te2.69Se0.33Cl0.03. Moreover, by incorporating 0.65 wt % AgBiSe2 (ABS) into Bi1.995Cu0.005Te2.69Se0.33Cl0.03, we further reduce its lattice thermal conductivity to ∼0.28 W m–1 K–1 at 353 K owing to the extra phonon scattering of multiscale ABS. Additionally, the Seebeck coefficient enhances (−183.89 μV K–1 at 353 K) owing to the matrix’s reduced carrier concentration caused by ABS. As a result, we achieve a high ZT of ∼1.25 (at 353 K) and a high ZTave of ∼1.12 at 300–433 K for Bi1.995Cu0.005Te2.69Se0.33Cl0.03 + 0.65 wt % ABS. This work provides a promising strategy for enhancing the thermoelectric performance of n-type Bi2Te3 through Cu/Cl doping and ABS incorporation.
研究领域:
材料科学
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能源材料
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热电材料优化
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JOURNAL OF ALLOYS AND COMPOUNDS
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2025
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IF 6.3
Fenghao Yu,Chaoxin Qiu,Cong Xiao,Yanxin Du,Lin Lai,Wei Ren,Wei Li,Liting Jiang,Xiaohua Luo,Shengcan Ma
At present, Ag-based thermoelectric materials have received extensive attention and have demonstrated excellent performance in related device application. Among them, AgBiSe 2 is a lead-free thermoelectric material that exhibits significant n -type doping characteristics. It has been previously reported that R Cl 3 -doping ( R denotes the rare earth elements) has achieved excellent results in some n -type thermoelectric materials. However, there is still a lack of systematic research on the effect of R Cl 3 doping on AgBiSe 2 based materials. In this work, n -type AgBiSe 1.98 polycrystalline materials doped with CeCl 3 (0.5–2 mol%) are successfully synthesized by the melting method in combination with spark plasma sintering (SPS) technique. Compared with AgBiSe 2 , the CeCl 3 -doped AgBiSe 1.98 samples have achieved a significant increase in thermoelectric figure of merit ( ZT ) value, which should be attributed to the higher power factor ( PF = S 2 σ ) and inherently low thermal conductivity. Specifically, a large ZT max of ∼ 0.65 is achieved at 733 K in the 2 mol% CeCl 3 -doped AgBiSe 1.98 sample, which shows an increase of 41 %. This study demonstrates that CeCl 3 -doping, as a novel strategy that can improve simultaneously n H and m *, reveals excellent optimization effects in the thermoelectric performance regulation of AgBiSe 2 -based materials.
研究领域:
材料科学
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热电材料
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凝聚态物理
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无机非金属材料
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能源材料
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高影响因子
Nanoscale
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2022
·Vol. 14
·期 30
·10750-10760
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IF 8.307
Jingge Zhang,Enna Ha,Danyang Li,Luyang Wang,Junqing Hu
Stimulus-responsive ternary chalcogenide nanomaterials are regarded as promising ‘all-in-one’ nanotheranostics agents on account of their tunable band structures and multi-metal intrinsic properties. Herein, ultrasmall AgBiSe2 nanodots are prepared by a simple thermal injection method. It shows a narrow band gap of 0.91 eV and high absorption coefficient in the NIR-II biowindow, resulting in excellent photothermal performance. Under the irradiation of a 1064 nm laser, AgBiSe2 can induce the overexpression of intracellular heat shock protein (Hsp70) and cell apoptosis to inhibit the growth of tumor cells. The strong signal from CT/thermal imaging also provides guidance for tumor diagnosis. Importantly, AgBiSe2 can be rapidly excreted from the body, thus avoiding long term toxicity. This study presents the first biomedical application of AgBiSe2 nanodots in cancer treatment and extends the development of ternary chalcogenide-based semiconductor nanomedicine.
研究领域:
生物材料
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癌症治疗
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纳米医学
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医学影像
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PubMed
高影响因子
Crystals
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2021
·Vol. 11
·期 9
·
IF 2.589
Xiao-Cun Liu,Ming-Yan Pan
AgBiSe2, which exhibits complex structural phase transition behavior, has recently been considered as a potential thermoelectric material due to its intrinsically low thermal conductivity. In this work, we investigate the crystal structure of Sn-doped AgBiSe2through powder X-ray diffraction and differential scanning calorimetry measurements. A stable cubic Ag1−x/2Bi1−x/2SnxSe2phase can be obtained at room temperature when the value ofxis larger than 0.2. In addition, the thermoelectric properties of Ag1−x/2Bi1−x/2SnxSe2(x= 0.2, 0.25, 0.3, 0.35) are investigated, revealing that Ag1−x/2Bi1−x/2SnxSe2compounds are intrinsic semiconductors with a low lattice thermal conductivity. This work provides new insights into the crystal structure adjustment of AgBiSe2and shows that Ag1−x/2Bi1−x/2SnxSe2is a potentially lead-free thermoelectric material candidate.
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高影响因子
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