ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Abdul Basit,Tanveer Hussain,Xin Li,Jiwu Xin,Bin Zhang,Xiaoyuan Zhou,Guoyu Wang,Ji-Yan Dai
Being a major obstacle, Ag2Te has always been restricted in p-type AgSbTe2-based materials to improve their thermoelectric performance. This work reveals a stabilized AgSbTe2 through Sn/Ge alloying as synthesized by melting, annealing, and hot press. Interestingly, addition of Sn/Ge in AgSbTe2 extended the solubility limit up to ∼30% and hence suppressed Ag2Te in Ag(1–x)SnxSb(1–y)GeyTe2 compounds and led to enhanced electrical transport. Moreover, electrical and thermal transport properties of AgSbTe2 have been greatly affected by the phase transition of Ag2Te near 425 K. However, high-entropy Ag0.85Sn0.15Sb0.85Ge0.15Te2 compound results in a stabilized rock-salt structure and presents a high power factor of ∼10.8 μW cm–1 K–2 at 757 K. Besides, density functional theory reveals that available multivalence bands in Sn/Ge-doped AgSbTe2 lead to reduction in energy offsets. Meanwhile, a variety of defects appear in the Ag0.85Sn0.15Sb0.85Ge0.15Te2 sample due to entropy change, and thus lattice thermal conductivity decreases. Ultimately, a high figure of merit of ∼1.5 is attained at 757 K. This work demonstrates a roadmap for other group IV–VI materials so that the high-entropy approach may inhibit the impurity phases with extended solubility limit and result in high thermoelectric performance.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CRYSTENGCOMM
·
2023
·Vol. 25
·期 15
·2237-2242
·
IF 3.1
Cunxin Li,Kaijia Xu,Lanjun Cheng,Zhichuan Wu,Yinyin Qian
Group I–V–VI2 nanocrystals have been considered as potential candidates in the field of optoelectronics due to their highly tunable semiconductor characteristics. AgSbTe2, one of the emerging group I–V–VI2 nanocrystals with optical phase-change properties, a high light absorption coefficient and wide spectral response, is attractive for eco-friendly photodetector devices. However, a colloidal synthetic route for obtaining highly crystalline AgSbTe2 nanocrystals with low toxicity precursors, which is vital to high-performance solution-processed photodetector devices, is still rare. Herein, we investigate the colloidal synthesis of quasi-cube AgSbTe2 nanocrystals from the reaction of commercially available AgNO3 with Sb(Ph)3 in oleylamine at 190 °C, followed by the injection of a tellurium source, which was prepared by directly dissolving TeO2 in 1-dodecanethiol. Simple AgSbTe2/ITO heterostructure photodetectors were fabricated by a low-temperature colloidal synthetic route in combination with the spin-coating technique, which exhibit good photoresponse in a wide range from 405 to 980 nm with fast response times (0.49 and 0.58 s) and excellent stability. This work suggests that ternary silver-based I–V–VI2 compound nanostructures have great potential for high-performance optoelectronic applications.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Wenjie Shu,Yuxia Tang,Bingwen Su,Aijun Hong,Lin Lin,Xiaohui Zhou,Zhibo Yan,Jun-Ming Liu
Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300–700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1–xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1–xCuxTe2. Overall, Cu doping improves the ZT of AgSb1–xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.
研究领域:
材料科学
·
热电学
·
半导体物理
·
能量转换
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 18
·8215-8220
·
IF 9.931
Mingtao Yan,Xiaojian Tan,Zhiwei Huang,Guoqiang Liu,Peng Jiang,Xinhe Bao
Rhombohedral GeSe is a promising p-type thermoelectric material with a multivalley band structure. However, its figure of merit ZT, especially average ZT is still relatively low compared with the state-of-art thermoelectric materials. Here, we show that alloying with AgSbTe2 can synergistically optimize the electronic and thermal transport properties of GeSe. On one hand, alloying can tune the crystal field and promote the band convergence between the lower light valence band and higher heavy valence band. The rising light valence band maximum increases both the density of state effective mass and carrier mobility, leading to a significantly improved power factor. On the other hand, the phonon scattering is also enhanced by the alloying effect, resulting in a low lattice thermal conductivity of 0.7 W m−1K−1 at 754 K. A peak ZT of ≈1.0 at 754 K was achieved in GeSeAg0.2Sb0.2Te0.4 and more importantly, the ZTavg (0.65) between 301 K and 754 K was improved by more than 56% compared to GeSeAg0.2Sb0.2Se0.4 (ZTavg = 0.41).
研究领域:
材料科学
·
热电学
·
凝聚态物理
·
能量转换材料
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry C
·
2024
·
IF 3.3
Yi Pan,Yongzhao Feng,Shiyu Wang,Xiaofang Lai,Hong Zhang,Jikang Jian
P-type AgSbTe2 exhibits great potential due to its high thermoelectric (TE) performance in the medium-temperature range. It is of importance from both scientific and application perspectives to enhance the TE performance of AgSbTe2 by substituting the environmentally harmful and expensive Te with the eco-friendly and cost-effective element S. In this work, we report an enhanced maximum figure of merit zT value of 1.31 at 573 K and an average zT value of 0.87 in the temperature range of 300–623 K for S-doped AgSbTe2, which are increases of about 23% and 30% than those of the undoped sample through the synergistic optimization of the electrical and thermal transport properties. S dopant suppresses the formation of Ag2Te precipitates at the grain boundaries, increases the p-type carrier concentration, and enlarges effective mass, which promotes the power factor. Meanwhile, the thermal conductivities of AgSbTe2–xSx samples decrease due to enhanced phonon scattering caused by S doping. This work demonstrates that the eco-friendly and low-cost substitution for Te with S is promising to advance the applications of AgSbTe2-based TE materials.
研究领域:
材料科学
·
热电学
·
能量转换
·
固体物理
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Jing Chen,Tao Li,Haiyang Dai,Chao Wang,Zhiquan Chen,Jie Wu,Shizhuo Wang,Xuerui Cheng,Renzhong Xue
In this study, the impact of codoping Mg and Ti on the thermoelectric performance of AgSbTe2 materials was investigated. Through a two-step synthesis process involving slow cooling and spark plasma sintering, AgSb0.98–xMg0.02TixTe2 samples were prepared. The introduction of Mg and Ti dopants effectively suppressed the formation of the undesirable Ag2Te phase. Density functional theory (DFT) calculations confirmed that Ti doping facilitated the band convergence, leading to a reduction in the effective mass of the carriers. This optimization enhanced carrier mobility and, consequently, electrical conductivity. Additionally, the codoping strategy resulted in the reinforcement of point defects, which contributed to a decrease in lattice thermal conductivity. The AgSb0.98–xMg0.02TixTe2 sample achieved a maximum figure of merit (ZT) value of 1.45 at 523 K, representing an 87% improvement over the undoped AgSbTe2 sample. The average ZT value over the temperature range of 323–573 K was 1.09, marking a significant enhancement in thermoelectric performance. This research demonstrates the potential of Mg and Ti codoping as a strategy to improve the thermoelectric properties of AgSbTe2-based materials.
研究领域:
材料科学
·
热电学
·
固体物理
·
能源材料
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Simin Zhang,Suiting Ning,Xinran Hu,Zhangheng Lai,Wenzeng Zhao,Hailin Liu,Yichu Wu,Zhiquan Chen
As a mid-temperature thermoelectric material, CuGaTe2 features a distinctive crystal structure, environmentally friendly and high tunability, all of which contribute to its promising thermoelectric performance. However, due to its intrinsically low electrical conductivity and high lattice thermal conductivity, the thermoelectric performance of pristine CuGaTe2 is unsatisfactory. In this work, Cu-deficient Cu0.96GaTe2 was alloyed with different contents of AgSbTe2 via a combined approach involving melting, ball milling, and spark plasma sintering. The Cu-poor condition introduces Cu vacancies, thereby providing more hole carriers. AgSbTe2 alloying leads to a further increase in the carrier concentration. Despite of the decrease in carrier mobility, the electrical conductivity was evidently enhanced. On the other hand, Sb doping increases the density of states at the Fermi level, leading to enhancement of the Seebeck coefficient. Moreover, Cu vacancies and AgSbTe2 alloying both cause a significant decrease in sound velocity, thereby decreasing the lattice thermal conductivity to an ultralow value of 0.29 W m–1 K–1 at 743 K. Finally, the optimized (Cu0.96GaTe2)0.9(AgSbTe2)0.1 sample demonstrates the highest thermoelectric performance, achieving an average zT of 0.41, which represents a 215.4% improvement over pristine CuGaTe2. Its peak zT reaches 1.39 at 743 K, corresponding to a 124.2% improvement relative to pristine CuGaTe2.
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）