Preparation of AlxZn1-xO resistive switching film by sol–gel method and its corrosion behavior in 3.5 wt% NaCl solution
Al x Zn 1- x O films were prepared on SS304 by using sol–gel method combined with spinning and heat treatment. The surface morphology, composition and structure of films were observed and characterized by scanning electron microscopy, X-ray diffractometer and Fourier transform infrared spectroscopy. The oxygen vacancy content and semiconductor type of Al x Zn 1- x O films were determined by X-ray photoelectron spectroscopy, electronic para -magnetic resonance spectroscopy, Mott-Schottky curve and density function theoretical calculation. The corrosion resistance and resistive switching performance of Al x Zn 1- x O films were measured by using electrochemical methods and immersion-polarisation experiments. The results show that the prepared Al x Zn 1- x O films are in n -type semiconductor material with a homogeneous and dense surface, the oxygen vacancy content is decreased with the increasing of Al dopping content. The corrosive resistance of Al x Zn 1- x O film was increased with the increasing of Al doping content with the best corrosion resistance at the doping content of 4% Al. During the immersion process, the corrosion resistance of Al x Zn 1- x O film was firstly increased and then decreased. The corrosion resistance of Al x Zn 1- x O films could be switched in the high and low resistance states under the immersion-polarization process by adjusting of the oxygen vacancy content in film.
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