Zonglun Li,Dexiang Gao,Shuxin Chen,Lei Yue,Bao Yuan,Xudong Shen,Le Kang,Quanjun Li,Bingbing Liu
Examining the evolution of photocurrent response in materials under high pressure is an exceptionally effective strategy for deepening our understanding of the intricate relationship between the material structure and its photoelectric-related properties. Herein, we demonstrated the low compressibility of the photoelectric properties of AsI3. With increasing pressure, the photocurrent response of AsI3 under 520 nm laser and xenon lamp illumination exhibits irregular yet gentle fluctuations within the range of 0.67–1.56 nA and 7.4–21.2 nA, respectively, demonstrating low sensitivity to pressure. In stark contrast, the elongation of As–I bonds culminated in a distinct molecular-ionic crystal isostructural transition around 4 GPa, while the bandgap underwent a pronounced monotonic decrease upon compression. This discrepancy may originate from the low dispersion of the valence band and conduction band in AsI3, causing irregular shifts of the valence band maximum and conduction band minimum within the Brillouin zone under pressure. These findings unveil a fresh perspective for gaining a deep understanding of the electronic structure and photoelectric properties of layered non-metal halides, potentially catalyzing the exploration and advancement of high-performance photoelectric materials.
Two isostructural adducts CHI3·(S8)3 (1) and AsI3·(S8)3 (2) are synthesized by a simple solution method. Both of them crystallize in noncentrosymmetric R3m, featuring van der Waals interaction linked CHI3 tetrahedra or SbI3 trigonal pyramids with crown-like S8 molecules. Both 1 and 2 show strong SHG responses and phase matchability under either 1.064 or 2.1 μm. The results of DFT calculations indicate that the electron transfer happens from S-3p to I-5p orbitals, and both of them demonstrate indirect band gaps. The NLO effects of 1 and 2 are almost fully contributed from the CHI3 or AsI3 units. Compared with AgGaS2, their powder laser damage thresholds are ca. 15 and 51 times higher.
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