Low-temperature sintered SrCu0.95Mn0.05Si4O10-Ba3V2O8 microwave dielectric ceramics with enhanced temperature stability for LTCC applications
With the advent of fifth-generation technology, high-performance microwave dielectric materials with low dielectric constant are urgently needed to enable the miniaturization and integration of communication devices. This study presents the synthesis and characterization of a composite comprising SrCu 0.95 Mn 0.05 Si 4 O 10 (SCSMn) and Ba 3 V 2 O 8 (BV) ceramics, designed for LTCC applications. In a solid-state reaction method, the composition of the synthesized composite was tailored to adjust the τ f value and lower the sintering temperature . The results indicate that the composition of 47.5 wt% SCSMn and 52.5 wt% BV sintered at 925 °C exhibits optimal microwave dielectric properties , including ε r of 8.86, a Q × f of 33860 GHz, and a τ f of 3 ppm/°C. Microstructural analysis revealed that interionic diffusion during sintering induced amorphous phase formation and an increased concentration of defect-associated Cu + and V 5+ species. Concomitant modifications in bond valence summation (BVS) parameters and global instability index (GII) values within the composite ceramics were observed, which collectively account for the discrepancies between theoretical predictions and experimental dielectric properties . The composite material also demonstrated excellent impedance matching and radiation performance when utilized as a substrate for simulating a slot-coupled antenna, validating its promising potential for LTCC applications .
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