A Novel White-Light-Emitting Phosphor Based on Bi3+-Doped BaLu2MgGa2Si2O12 for Near-UV Excited White LEDs
Bi3+-activated luminescence materials have gained growing attentions for optoelectronic applications. In this work, a novel BaLu2MgGa2Si2O12: Bi3+ garnet phosphor was synthesized through a traditional high-temperature solid phase reaction method. The crystal structure was ascertained through X-ray diffraction analysis and Rietveld structural refinement. The particle morphology and constituent elements distributions were investigated through scanning electron microscope and element mapping. Excited at 330 or 370 nm, the phosphors exhibit two emission peaks located at 413 and 495 nm, which is ascribed to the allowed transitions of Bi3+: 3P1 → 1S0. The luminescence intensity reaches the maximum at the 4 mol% Bi3+ doping content, and the emission color is easily manipulated by tuning the excitation wavelength. Besides, the luminescence intensity at 150 ℃ remains 80% of that at room temperature. These results suggest that the novel phosphors have promising application in the near-UV excited white LEDs.
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