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Microwave dielectric properties of Bi(Sc1/3Mo2/3)O4 ceramics for LTCC applications

Wang Zixing,Yuan Changlai,Zhu Baohua,Feng Qin,Liu Fei,Miao Lei,Zhou Changrong,Chen Guohua

A novel microwave dielectric ceramics Bi(Sc 1/3 Mo 2/3 )O 4 with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc 1/3 Mo 2/3 )O 4 ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO 4 2− tetrahedra. The dielectric loss of Bi(Sc 1/3 Mo 2/3 )O 4 ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc 1/3 Mo 2/3 )O 4 ceramic sintered at 875 °C/4 h, with dielectric constant ~ 25, Q  ×  f ~ 51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~ − 70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.