Zhenying Chen,Xiuqing Cao,Yuyang Huang,Shuang Zhang,Wenjian Pan,Wen Deng
Ti-doped ZnO (TZO) and Bi2O3thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3(TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi2O3, and TZO/Bi2O3films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10−3Ω·cm). However, the Bi2O3film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 102Ω·cm). The I–V curve of TZO/Bi2O3composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi2O3films.Keywords:TZO film;Bi2O3film;TZO/Bi2O3heterojunction;magnetron sputtering;optoelectronic properties
Bismuth-based compounds have been regarded as a kind of promising material due to their narrow bandgap, high carrier mobility, low toxicity, and strong oxidation ability, showing potential applications in the field of photoelectrochemical (PEC) activities. They can be applied in sustainable energy production, seawater desalination and treatment, optical detection and communication, and other fields. As a member of the broader family of bismuth-based materials, β-Bi2O3exhibits significant advantages for applications in engineering, including high photoelectric response, stability in harsh environments, and excellent corrosion resistance. This paper presents the synthesis of β-Bi2O3thin films utilizing the mist chemical vapor deposition (CVD) method at the optimal temperature of 400 °C. Based on the β-Bi2O3thin film synthesized at optimal temperature, a PEC-type photodetector was constructed with the highest responsivity R of 2.84 mA/W and detectivity D of 6.01 × 1010Jones, respectively. The photodetection performance was investigated from various points like illumination light wavelength, power density, and long-term stability. This study would broaden the horizontal and practical applications of β-Bi2O3.
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