Poly(arylene ether nitrile) Dielectric Film Modified by Bi2S3/rGO-CN Fillers for High Temperature Resistant Electronics Fields
High-quality film capacitors are widely used in many fields such as new energy vehicles, electronic communications, etc., due to their advantages in wide frequency response and low dielectric loss. The dielectric film is a crucial part of the film capacitor, and its properties have an important impact on the performance and use conditions of the film capacitor. In this work, a novel high-temperature-resistant dielectric film was prepared. Firstly, the Bi 2 S 3 /rGO-CN fillers were prepared by hydrothermal method combined with cyanation treatment, and then added to the poly(arylene ether nitrile) (PEN) matrix to prepare the dielectric film materials (PEN/Bi 2 S 3 /rGO-CN). After high temperature treatment, the fillers Bi 2 S 3 /rGO-CN reacted with the PEN matrix, and the composites materials transformed into a thermosetting hybrid film (PEN-Bi 2 S 3 /rGO) with gel content of 97.88%. The prepared hybrid dielectric films did not decompose significantly before 400 °C, and showed a glass transition temperature ( T g ) of up to 252.4 °C, which could increase the effective use temperature of the materials. Compared with the composite films without heat treatment, they exhibit better mechanical properties, with further improvement in tensile strength and elastic modulus, and a decrease in elongation at break. The dielectric constant of the hybrid films can be up to 6.8 while the dielectric loss is only about 0.02 at 1 kHz. Moreover, the hybrid films showed excellent dielectric stability during temperature changes, and remain relatively stable before 250 °C, which is suitable as a high-temperature-resistant high-dielectric material and is more advantageous for practical applications.
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