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Bi2Te2.7Se0.3
Physica Status Solidi-Rapid Research Letters · 2020 ·Vol. 14 ·期 4 ·1900679 · IF 2.291

Enhanced Thermoelectric Performance of Bi2Te2.7Se0.3/Bi2S3 Synthesized by Anion Exchange Method

Xi Chen,Fanggong Cai,Chuanrong Liu,Rong Dong,Lanxin Qiu,Lili Jiang,Guocai Yuan,Qinyong Zhang

Decoupling the electric conductivity, Seebeck coefficient, and thermal conductivity is a core issue to improve the properties of thermoelectric materials by tuning the electron and phonon transport properties. Herein, Bi 2 Te 2.7 Se 0.3 /Bi 2 S 3 heterostructure is successfully synthesized by a simple anion exchange method with Bi 2 Te 2.7 Se 0.3 as the starting material. The Bi 2 Te 2.7 Se 0.3 /Bi 2 S 3 heterointerfaces can achieve an effective phonon scattering and significant decrease in thermal conductivity, while maintaining a high power factor, resulting in an enhanced figure of merit ( ZT ). By controlling the concentration of Bi 2 Te 2.7 Se 0.3 /Bi 2 S 3 heterointerfaces, the carrier-transporting and phonon-scattering behaviors can be simultaneously optimized. A maximum ZT of 0.7 is obtained at 473 K, which is 23% higher than that of pure Bi 2 Te 2.7 Se 0.3 . In addition, the average ZT at 300–548 K increases from 0.49 to 0.61, which is 25% higher than that of pure Bi 2 Te 2.7 Se 0.3 .

研究领域: 材料科学 · 物理学
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CARBON · 2021 · IF 9.594

High-performance microwave absorption of 3D Bi2Te2.7Se0.3/Graphene foam

Jianglin Diao,Zhihao Cai,Lun Xia,Ziyuan Wang,Zhanzhao Yin,Xiaoyan Liu,Wenle Ma,Yi Huang

Graphene foam (GF) has grabbed considerable attention for microwave absorption (MA) due to its high specific surface area, rich micro-nano structures and versatile processing. However, restricted by the intrinsic electromagnetic properties of graphene, the MA property of GF is usually unsatisfactory. To further improve the absorption strength of GF, groundbreakingly, the thermoelectric material Bi 2 Te 2 .7 Se 0.3 (BTS) and graphene are combined to form Bi 2 Te 2 .7 Se 0.3 /GF (BTSGF) composites through a solvothermal self-assembly method. BTSGF composites have achieved much enhanced MA properties. The minimal reflection loss (RL min ) and the qualified absorption bandwidth of BTS9GF-200 (90 wt% BTS, annealed at 200 °C) reaches improved −73.0 dB and 5.32 GHz, respectively. Meanwhile, BTS3GF-300 (30 wt% BTS, annealed at 300 °C) exhibits an impressive qualified absorption bandwidth of 8.9 GHz and achieves an enhanced RL min of −58 dB. The enhanced MA performance of BTSGF stems from various synergistic effects of BTS and GF, such as conduction loss and polarization. More importantly, BTS's thermal energy-electric energy conversion capability is believed to can quickly convert heat into electricity and strengthen the attenuation of electromagnetic waves. Therefore, a new electromagnetic wave-thermo-electric loss MA mechanism is proposed, which is of great significance to the study of thermoelectric materials as high-efficiency MA materials .

研究领域: 材料科学 · 电磁学
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles

Tao Chen,Shujin Li,Ke Chen,Mazhar Hussain Danish,Hui Liu,Di Li,Hongxing Xin,Yongsheng Zhang,Jian Zhang,Xiaoying Qin

Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZTmax = 1.19 (at 373 K) and an average ZTave ∼ 1.12 (300–473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.

研究领域: 材料科学 · 能源工程
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CARBON · 2022 · IF 11.307

High-performance electromagnetic interference shielding and thermoelectric conversion derived from multifunctional Bi2Te2.7Se0.3/MXene composites

Jianglin Diao,Jia Yuan,Zhihao Cai,Lun Xia,Zheng Cheng,Xiaoyan Liu,Wenle Ma,Shufang Wang,Yi Huang

High-performance electromagnetic interference (EMI) materials with remarkable thermoelectric conversion/self-powered capabilities seem to be predictably imperative to eliminate electromagnetic wave pollution and reduce local overheating of devices to ensure the reliable operation of electronic instruments and wearable electronic devices. Herein, multifunctional Bi 2 Te 2.7 Se 0.3 /Ti 3 C 2 T x (BTS/MXene) composites are fabricated by mixing BTS and MXene dispersion followed by vacuum-assisted filtration and hot pressing, which exhibit highest EMI shielding efficiency (EMI SE) of 94.33 dB and average EMI SE of 83.4 dB over the whole X band (BTS/MX-30, containing 30 wt% MXene). Meanwhile, the BTS/MXene composites also demonstrate impressive thermoelectric (TE) conversion capabilities, achieving a peak dimensionless figure of merit (ZT) of 1.2 from 313 to 498 K for BTS/MX-1.5 (involving 1.5 wt% MXene). The excellent electromagnetic wave shielding performances originate from the reflection caused by the impedance mismatch, the multiple scattering at the BTS/MXene interface, the polarization at the terminal of MXene and BTS, etc. On the other hand, the excellent thermoelectric performance of BTS/MXene comes from the high conductivity of MXene and the blocking of low-energy carriers and the scattering of phonons at the interface. Hence, multifunctional BTS/MXene composites display broad prospects for simultaneous implementation of EMI shielding and thermoelectric conversion/self-powered applications in miniature and wearable electronic instruments.

研究领域: 材料科学 · 电子工程
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MODERN PHYSICS LETTERS B · 2024 · IF 1.8

Improved thermoelectric performance of Bi2Te2.7Se0.3 with honey dispersion

Qinglin He,Delin Yang,Wanwan Zhang,Hongzhang Song

Bi 2 Te 3 -based alloys are only commercial thermoelectric materials. While, currently, n -type Bi 2 Te 2 . 7 Se 0 . 3 -based alloys commonly have lower ZT values than those of p -type Bi 0 . 5 Sb 1 . 5 Te 3 based alloys. In this paper, the influence of different amounts of dispersing honey on the thermoelectric performance of n -type Bi 2 Te 2 . 7 Se 0 . 3 alloys synthesized by the hydrothermal and hot-pressing methods was investigated. The carbon atoms contained in honey could increase lattice defects and grain boundary density effectively, and improved the Seebeck coefficient and suppress lattice thermal conductivity simultaneously. By adjusting the amount of honey, the maximum ZT value reached 0.82 at 423 K, which was approximately 65% higher than that of the pristine Bi 2 Te 2.7 Se 0.3 .

研究领域: 材料科学 · 热电学 · 能量转换
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ACS Applied Materials & Interfaces · 2021 · IF 9.229

Realize High Thermoelectric Properties in n-Type Bi2Te2.7Se0.3/Y2O3 Nanocomposites by Constructing Heterointerfaces

Qiujun Hu,Wenbin Qiu,Longqing Chen,Jie Chen,Lei Yang,Jun Tang

Due to the excellent thermoelectric performance, bismuth telluride (Bi2Te3) compounds are highly promising for the thermoelectric conversion in the room temperature range. However, the inferior thermoelectric performance of the n-type leg severely restricts the applications of Bi2Te3-based thermoelectric couples. Herein, n-type Bi2Te2.7Se0.3 (BTS)-based thermoelectric materials incorporated with nanosized Y2O3 (0.5–3 wt %) are prepared and their thermoelectric properties are systematically studied. The dramatically improved thermoelectric performance is ascribed to the realization of a multiscale feature of Y2O3 nanoparticle (NP)-induced interfacial decorations distributed along grain boundaries, which creates massive BTS/Y2O3 interfaces for the manipulation of carrier and phonon transport properties. The geometric phase analysis is employed to further confirm the condition of local strain in the BTS composite incorporated with Y2O3 NPs. Due to the presence of heterointerfaces and high density of dislocations in BTS matrices, the minimum lattice thermal conductivity (κl) of the nanocomposites (NCs) is dramatically suppressed from 0.76 to 0.37 W m–1 K–1. With the incorporation of 3 wt % Y2O3 NPs, the Vickers hardness of the BTS/Y2O3 NC is increased by about 32%. Overall, the BTS + 1.5 wt % Y2O3 NC maintains excellent thermoelectric properties (ZTave = 1.1) in the whole operative temperature range (300–500 K). The present strategy of implementing high-density heterogeneous interfaces by Y2O3 NP addition offers an applicable pathway for fabricating high-performance thermoelectric materials with both optimized thermoelectric properties and mechanical properties.

研究领域: 材料科学 · 热电学 · 纳米复合材料 · 能量转换
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CERAMICS INTERNATIONAL · 2024 ·Vol. 50 ·期 9 ·15209-15217 · IF 5.1

Enhanced thermoelectric properties of Bi2Te2.7Se0.3/hexagonal BN composites and optimized modules for power generation

Junbiao Guo,Qin Ma,Kaiyi Luo,Wenbin Qiu,Haowen Chen,Pingping Qian,Yixiao Deng,Xiaoyong Wu,Lei Yang,Jun Tang

Bismuth telluride-based materials are well known for their excellent thermoelectric (TE) properties within the near-room temperature range. However, the poor thermoelectric performance of their n-type counterparts has posed a major hindrance to the application of bismuth telluride-based thermoelectric generator (TEG). In this study, a dual optimization approach was implemented. Specifically, 2D ceramic nano-sized hexagonal boron nitride (h-BN) was introduced into n-type Bi 2 Te 2.7 Se 0.3 (BTS) to enhance its performance, aligning it with p-type materials. It is indicated that ceramic h-BN decoration leads to the emergence of a high density of dislocations, which boosts the phonon scattering and reduces lattice thermal conductivity significantly. Meanwhile, a high carrier mobility is maintained to ensure an improved power factor. With the addition of moderate ceramic h-BN, the composite material achieved a ZT value of 1.1 at 400 K. The geometric configuration of TEG was optimized using finite element methods to strike the optimal balance between output power ( P o u t ) and efficiency ( η ). Based on the structure optimization results, the predicted P o u t and η increased by 48 % and 36 %, respectively. The fabricated TEG demonstrated to achieve an efficiency of 6.4 %. This work allows the evolution from bismuth telluride-based prototype to a functional TEG advanced in room-temperature heat recovery.

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Journal of Materials Chemistry C · 2025 · IF 5.1

Enhanced thermoelectric performance of Bi2Te2.7Se0.3 by constructing multiple interfaces through the introduction of heterojunction compounds

Zheng Jiang,Shengqiang Cui,Shan Wang,Yajing Wang,Xinxin Wang,Guangmeng You,Xueke Gu,Pengli Si,Gui Yang,Chao Wang

Enhancing phonon scattering has emerged as an effective strategy for suppressing lattice thermal conductivity (κL), thereby improving the performance of bulk thermoelectric materials. Compared with other strategies, the primary purpose of introducing more grain boundaries is to enhance the scattering of mid to low-frequency phonons, consequently reducing the κL at the near-room temperature, which proves advantageous for enhancing the thermoelectric properties of Bismuth telluride-based materials. In this study, MnS/MoS2 as a heterojunction compound was incorporated into a Bi2Te2.7Se0.3 matrix, resulting in the formation of a unique (Bi2Te2.7Se0.3 → MnS → MoS2) three grain boundary interface structure, which significantly enhanced phonon scattering. Additionally, the MnSe secondary phase was observed and confirmed through both X-ray diffraction (XRD) and transmission electron microscopy (TEM). The introduction of 0.3% MnS/MoS2 leads to a reduction in the κL from 0.58 W m−1 K−1 to 0.41 W m−1 K−1 at 300 K. Simultaneously, the synergistic optimization of electrical properties results in a PF of 33 µW cm−1 K−2 at 300 K. Finally, a high ZT value ∼1.17 (375 K) and an average ZTave ∼ 1.08 (300–500 K) were achieved for Bi2Te2.7Se0.3–0.3% MnS/MoS2, which was enhanced 54% and 57% compared with those of the Bi2Te2.7Se0.3 alloy, respectively.

CAS / MDL: 60-54-8 7782-49-2
研究领域: 材料科学 · 凝聚态物理 · 功能材料 · 热电转换 · 纳米复合材料
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CERAMICS INTERNATIONAL · 2023 ·Vol. 49 ·期 11 ·18371-18378 · IF 5.2

Realize high thermoelectric properties in n-type Bi2Te2.7Se0.3 materials via ZrO2 ceramic nanoparticles mediated heterogeneous interface

Qiujun Hu,Junbiao Guo,Hanyang Zuo

Bismuth telluride (Bi 2 Te 3 )-based thermoelectric materials have been commercially utilized for refrigeration and energy conversion at room/near room temperature. However, n -type Bi 2 Te 3 compounds always exhibit inferior performance compared with their p-type counterparts, which is pronouncedly impeding Bi 2 Te 3 -based energy converters from further optimizations. Herein, a promising ZT value ( ZT  = 1.33) was obtained in n-type Bi 2 Te 2.7 Se 0.3 (BTS) materials by using an interface engineering strategy to synergistically optimize the electron and phonon transport properties. In detail, ZrO 2 ceramic nanoparticles (NPs) were entered into BTS matrix to construct high-density heterogeneous interfaces. The heterogeneous interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by ZrO 2 NPs doping. A planar module consisting of 127 pairs of p-n single legs were assembled. At the temperature difference of 200 K, the output power and energy conversion efficiency reached 9.6 W and 6.2%, respectively. This strategy provides a feasible way to rationally design advanced n-type Bi 2 Te 2.7 Se 0.3 materials with excellent thermoelectric and mechanical properties induced by high-density heterogeneous interfaces.

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Materials Today Chemistry · 2026 · IF 7.4

Tailoring the thermoelectric performance of 3D-printed n-type Bi2Te2.7Se0.3 through Ag doping in vdW-gaps

Qiujun Hu,Xiaowei Liang,Xiaomiao Zhao,Panjun Wang,Chunlong Guan,Shun Wang,Zhiwei Zhao

Thermal-driven Ag intercalation enables vdW-gaps doping in 3D-printed n-type Bi 2 Te 2.7 Se 0.3 . • vdW-gaps Ag enhances electrical transport and lowers lattice thermal conductivity. • Peak ZT of 1.26 and module efficiency of 6.0% are achieved. Bi 2 Te 3 -based materials are recognized as the benchmark thermoelectrics for near-room-temperature applications. However, substantially inferior thermoelectric performance in n-type Bi 2 Te 3 compared to highly performance p-type variants creates a critical performance asymmetry, restricting energy conversion efficiency. Herein, we develop thermal-driven Ag intercalation into van der Waals (vdW) gaps of 3D-printed n-type Bi 2 Te 2.7 Se 0.3 (BTS), achieving vdW-gaps doping. The first-principles calculations demonstrate that interstitial Ag atoms are mainly located at the vdW gaps, which reduces their direct perturbation to the conductive layers. As a result, they provide spatially separated conduction electrons, increasing carrier concentration while sustaining high carrier mobility. Furthermore, the Ag-intercalation-induced superlattice structures efficiently scatter mid-to-long wavelength phonons, thereby effectively suppressing lattice thermal conductivity. Ultimately, the BTS + 0.2% Ag intercalated sample achieves a peak ZT of 1.26 at 375 K, with an average ZT ∼1.12 maintained across the operational temperature range of 300-500 K. Leveraging such exceptional thermoelectric performance, a thermoelectric module assembled with 127 pairs legs delivers a conversion efficiency of 6.0% under ΔT = 180 K. This work provides a facile thermal-driven Ag intercalation strategy for vdW-gaps doping of n-type Bi 2 Te 3 -based thermoelectrics, breaking the performance asymmetry bottleneck and enabling high-efficiency near-room-temperature thermoelectric modules.

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CERAMICS INTERNATIONAL · 2023 ·Vol. 49 ·期 19 ·32144-32152 · IF 5.2

Enhanced thermoelectric properties of n-type Bi2Te2.7Se0.3 materials by TiO2 ceramic nanoparticle dispersion-induced energy filtering effect

Qiujun Hu,Junbiao Guo,Hanyang Zuo,Haowen Chen

Due to their superior thermoelectric capabilities, Bi 2 Te 3 -based materials have long been a popular area of study in the thermoelectric field. However, further advancements in the energy conversion efficiency of Bi 2 Te 3 -based thermoelectric modules are constrained by the low figure of merit of n -type Bi 2 Te 3 . Here, we describe an efficient method for enhancing the electrical and thermal characteristics of n -type Bi 2 Te 2.7 Se 0.3 (BTS) material by dispersing TiO 2 ceramic nanoparticles (NPs) in the matrix of the BTS. In more detail, the energy potential barrier, created by the matrix and the addition of TiO 2 NPs, causes an energy filtering effect, which in turn raises the Seebeck coefficient. The lattice thermal conductivity is decreased as a result of dislocations at the TiO 2 /BTS interface and an increase in grain boundary density brought on by the fine grain strengthening of TiO 2 ceramic NPs. Last but not least, the ZT max for the BTS + 3 wt% TiO 2 sample increased to 1.31, representing an improvement of 52% over the pristine sample. Additionally, at a maximum temperature differential of 150K, we have built a thermoelectric module with a power output and energy conversion efficiency of 7.2 W and 5.9%, respectively. This study introduces a viable approach towards the rational design of advanced n -type Bi 2 Te 2.7 Se 0.3 materials.

研究领域: 材料科学 · 热电学 · 纳米复合材料 · 能量转换
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2024 · IF 5.8

Realizing high mechanical and thermoelectric properties of N-type Bi2Te2.7Se0.3 ingots through powder sintering and carrier concentration regulation

Wanwan Zhang,Mengyao Li,Mochen Jia,Yuchao Fan,Yingjiu Zhang,Zengguo Tian,Xinjian Li,Yu Liu,Dawei Yang,Hongzhang Song,Andreu Cabot

Bi 2 Te 3 -based crystal ingots produced by zone melting (ZM) are the most widely used materials to manufacture commercial thermoelectric (TE) devices. However, the poor mechanical properties of such crystalline materials limit the production of small-scale devices. While processability can be improved by powder metallurgy (PM), it also leads to the deterioration of the TE properties due to the donor-like effect of the introduced defects and grain boundaries. Thus, additional efforts towards re-optimizing doping are required. Here, we report a PM method to improve the mechanical properties of Bi 2 Te 3 -based TE materials through the crushing and hot pressing of Bi 2 Te 3 ingots obtained by ZM. Besides, we demonstrate the TE properties of n-type Bi 2 Te 2.7 Se 0.3 (BTS) to be remarkably improved by Cu doping, which enables optimization of the carrier concentration and enhances phonon scattering at heterointerphases thus increasing the Seebeck coefficient and reducing thermal conductivity. Overall, optimized materials reach dimensionless TE figures of merit ( ZT ) up to 1.16 at 408 K, i.e. 45% higher than that of state-of-the-art BTS, and an average ZT value of 1.08 in the temperature range of 300–473 K.

CAS / MDL: 1317-38-0
研究领域: 材料科学 · 热电转换技术
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