An ultra-low dark current, high-performance photodetector based on CVD-grown Bi2TeO5
Low-dimensional materials, particularly quasi-2D semiconductors like bismuth oxychalcogenides (BiOX), offer unique advantages for advanced photodetection due to van der Waals integration and quantum-confined properties. In this research, Bi2TeO5 nanosheets were successfully grown using a chemical vapor deposition method. The resulting Bi2TeO5 photodetector exhibited remarkable performance characteristics. Specifically, it demonstrated an open circuit voltage of −1.14 V, a depolarization field of 5.7 × 107 V m−1, a remarkably low dark current of 10−15 A, an impressive on/off ratio of 103, a responsivity of 466.80 mA W−1, a detectivity of 4.23 × 1012 Jones, and an EQE of 218.44% at 8 V bias. The work highlights the significant potential of Bi2TeO5 and provides new design strategies for developing next-generation 2D photodetectors.
危险品化学品经营许可证（带存储）