Effects of B2O3-Bi2O3 addition on the dielectric properties of low-temperature-sintered MgO-TiO2(w) ceramics
The effects of different contents of B 2 O 3 -Bi 2 O 3 on the sintering temperature and dielectric properties of MgO-12%TiO 2 (w) ceramics were investigated. B 2 O 3 -Bi 2 O 3 addition effectively reduced the sintering temperature and improved the dielectric properties of ceramic samples; however, an excessive amount of B 2 O 3 -Bi 2 O 3 led to the deterioration of dielectric properties. This is because Bi 2 O 3 participated in the chemical reaction between MgO and TiO 2 and generated a high-dielectric-loss Bi 2 Ti 2 O 7 phase, resulting in an increased dielectric loss in the ceramic samples. In contrast, B 2 O 3 formed a liquid phase to fill the grain gaps and pores during sintering, improving the densities of the ceramic samples. An appropriate amount of B 2 O 3 -Bi 2 O 3 accelerated the reaction between MgO and TiO 2 and formed ultralow-dielectric-loss phases—MgTiO 3 and Mg 2 TiO 4 , and the dielectric losses of the ceramic samples decreased to an order of 10 −5 .
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