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JOURNAL OF COLLOID AND INTERFACE SCIENCE · 2021 · IF 8.128

Bi2WO6 quantum dots with oxygen vacancies combined with g-C3N4 for NO removal

Cheng Cheng,Dongyun Chen,Najun Li,Hua Li,Qingfeng Xu,Jinhui He,Jianmei Lu

Semiconductor materials have been used for photocatalytic degradation since they were discovered to be useful for photocatalytic degradation. Many studies have been researched to improve the efficiency of photocatalytic degradation. Among them, the introduction of vacancies to improve the photocatalytic efficiency has been verified to be a more feasible method. In this study, we combined two-dimensional (2D) graphite carbon nitride (g-C 3 N 4 ) nanosheets with oxygen-containing vacancy zero-dimensional (0D) Bi 2 WO 6 (BWO-OV) quantum dots to prepare 2D-0D g-C 3 N 4 /Bi 2 WO 6 -OV composite catalyst. The use of Bi 2 WO 6 containing oxygen vacancies enhanced the absorption of light and increased the generation of photogenerated carriers. In addition, the formation of heterojunction and the vacancy structure of Bi 2 WO 6 promote the life of photogenerated carriers and improve the catalytic effect of the catalyst. This structure shows high efficiency in removing low concentration (0.5 ppm) of nitric oxide (NO) at room temperature. The efficiency of the composite catalyst is much higher than g-C 3 N 4 or BWO-OV, and better than the composite g-C 3 N 4 /Bi 2 WO 6 without oxygen vacancies. When applied to NO removal, the composite g-C 3 N 4 /Bi 2 WO 6 -OV-10 showed the best catalytic activity which was up to 61.2%. At the same time, five cycles of experiments show that the material has excellent stability.

CAS / MDL: 57-13-6
研究领域: 材料科学 · 环境科学
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CHEMICAL ENGINEERING JOURNAL · 2022 · IF 16.744

Attapulgite-interpenetrated g-C3N4/Bi2WO6 quantum-dots Z-scheme heterojunction for 2-mercaptobenzothiazole degradation with mechanism insight

Yingshan Zeng,Qiao Yin,Zhi Liu,Hao Dong

The rational utilization of graphitic carbon nitride (g-C 3 N 4 ) and quantum dots (QDs) semiconductors to highlight their merits as efficient photocatalysts remains attractive and challenging. Targeted integration of g-C 3 N 4 and QDs with expanded interfacial contact and multi-channel electron transfer is an effective means to boost the transfer efficiency of photogenerated electrons and achieve prominent photocatalytic activity. In this article, novel attapulgite (ATP)-interpenetrated Bi 2 WO 6 QDs/g-C 3 N 4 nanocomposites (BWQ/g-C 3 N 4 /ATP, designated as BCAs) are successfully fabricated through a simple and effective in situ hydrothermal growth method. The nanorod-structured ATP acts as numerous bridges to intercalate into the interlayers and expands inner space of g-C 3 N 4 . Theoretical calculation results indicate that an interfacial internal electric field (IEF) is formed where electrons transfer from g-C 3 N 4 to Bi 2 WO 6 . Originating from the intact interfacial contact of the expanded g-C 3 N 4 and highly dispersed BWQ with reinforcing electronic transferability of ATP, the optimal sample of BCA5 with higher specific surface area, more active sites and electron transfer channels, and stronger light harvestability, exhibits a nearly-100% degradation of organic contaminant of 2-Mercaptobenzothiazole in water, 35-, 17- and 3-fold rate constant higher than that the pristine g-C 3 N 4 , BWQ and Bi 2 WO 6 /g-C 3 N 4 counterparts, respectively. Various characterization techniques are employed to put forward the mechanisms in depth on MBT degradation route and IEF-induced photocatalytic Z-scheme over the BCA5 under photoexcitation.

研究领域: 材料科学 · 环境科学
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