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Materials Today Communications · 2025 · IF 4.5

Extremely low dielectric loss of Mg and Al co-substituted CCTO ceramic with excellent temperature stability

Zefeng Guo,Jianhua Zhang,Yongke Yan,Guoyu Zhang,Dongdong Liu,Zhipeng Lei,Yuanyuan Li,Lu Li

Achieving both low dielectric loss (tan δ ) and high temperature stability of ceramic capacitors can greatly broaden their potential application. In this study, the effects of Mg and Al co-substitution on the microstructure and dielectric properties of CCTO-based ceramics were investigated in CaCu 3- x Mg x Ti 4- x Al x O 12 ( x  = 0, 0.025, 0.050, and 0.075) ceramics prepared by a sol-gel method. XRD analysis shows that the primary crystalline phase of CCTO is formed in all samples, indicating that Mg 2 + and Al 3+ have entered the lattice. SEM results reveal the co-substitution of Mg and Al inhibits the grain growth, leading to an increase in grain boundary density. All co-substituted samples exhibited low tan δ and excellent temperature stability. Notably, CaCu 2.95 Mg 0.05 Ti 3.95 Al 0.05 O 12 ceramics exhibited an extremely low tan δ of 0.007 (at 10 3 Hz) and its dielectric constant maintained excellent stability over a broad temperature spectrum (−125 to 150 °C), meeting the commercial standards for X8P capacitors. The reduction of tan δ is mainly attributed to the inhibition of grain growth in Mg and Al co-substituted samples, which increases grain boundary density and subsequently suppresses the mobility of oxygen vacancies, leading to an increase in grain boundary resistance. Furthermore, the improvement in temperature stability is ascribed to the reduction in the content of oxygen vacancies and the suppression of electron transitions between Ti 4+ and Ti 3+ as well as Cu 2+ and Cu + in Mg and Al co-substituted samples, resulting in an increase in grain boundary activation energy. These novel findings are hoping to contribute to not only the fabrication of new CCTO-based ceramics with extremely low tanδ and excellent temperature stability but also the application of CCTO-based ceramics at a very broad temperature range in electronic devices, new energy vehicles, aerospace, and polar scientific research equipment.

CAS / MDL: 9002-89-5
研究领域: 材料科学 · 电子工程
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2020 ·Vol. 31 ·期 11 ·8481-8488 · IF 2.22

Enhanced dielectric properties of CCTO ceramics doped by different halogen elements

Zhang Jianhua,Li Zhuoxiao,Liu Yuqian,Zheng Jiecheng,Lu Wenmin,Guo Siqi,Lei Zhipeng,Lin Lingyan,Tian Muqin

In this work, effects of different halogen elements (F, Br, and I) on the microstructure, morphology, and dielectric properties of CaCu 3 Ti 4 O 12 (CCTO) ceramics prepared through sol–gel method were systematically studied. It was found that the dielectric loss of the CCTO ceramics doped with F reduced to 0.022 and the breakdown field strength increased to 9.4 kV/cm, simultaneously. Moreover, the Br-doped samples exhibited the lowest dielectric loss of 0.019 and the highest dielectric constant of about 82,047, while the breakdown field strength declined obviously compared to pure CCTO samples. However, in contrast to F or Br element, the I element did not significantly improve the dielectric properties of CCTO ceramics. In addition, the decreased dielectric loss for the doped CCTO ceramics could be owed to the increasing resistance of the grain boundaries, and the improved breakdown field strength could be attributed to the enhanced potential barrier height. All the results suggest that introducing anions, like halogen elements, is an efficient approach to improve the dielectric properties of CCTO ceramics.

研究领域: 材料科学 · 无机非金属材料 · 电子功能材料 · 介电材料 · 固态化学
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