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CIGSSe
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY · 2020 ·Vol. 20 ·期 4 ·2578-2583 · IF 1.134

Fabrication of CIGSSe Thin Film Solar Cells with Colloidal Synthesized CuIn0.7Ga0.3S2 Nanocrystals

Cui Yong,Shao Hongmei,Zhang Zhiwei,Wang Zihan,Li Jing,Liu Shi,Wang Gang

Quaternary colloidal CuIn0.7Ga0.3S2 nanocrystals were synthesized by hot injection method using oleylamine as single solvent. The structure, morphology and optical absorption properties of assynthesized CuIn0.7Ga0.3S2 nanocrystals were characterized in detail using X-ray powder diffraction, transmission electron microscopy and UV-vis spectrometry. The as-fabricated CIGSSe thin film was obtained by spin-casting as-synthesized colloidal CuIn0.7Ga0.3S2 nanocrystals after selenization. The classical pn heterojunction CIGSSe/CdS thin film solar cells displayed the 6.18% power conversion efficiency under AM1.5G illumination.

研究领域: 材料科学 · 纳米技术 · 光伏技术
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Solar RRL · 2025 · IF 4.7

Exceeding 13% Power Conversion Efficiency of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells with AgNWs/TiOx Composite Transparent Conductive Window Layer

Yongliang Lai,Bowen Liu,Dongdong Shen,Zhuoer Deng,Xinan Shi,Daocheng Pan

Indium tin oxide (ITO) is usually served as the transparent conductive electrode of Cu(In, Ga)(S, -Se) 2 (CIGSSe) solar cells. However, ITO is fabricated by sputtering method, which will increase the cost of CIGSSe solar cells and prevent its large-scale market applications in the future. Hence, it is particularly important to develop low-cost transparent conductive window layers to replace the traditional ITO. Silver nanowires (AgNWs) are considered to be the most promising alternative to ITO. Compared with sputtered ITO, AgNWs have the advantages of high transmittance, low cost, and easy fabrication. Nevertheless, the poor adhesion and stability of AgNWs can prevent the transportation of carriers of CIGSSe solar cells. Here, we select amorphous TiO x as an adjuvant to fabricate AgNWs/TiO x composite transparent conductive layer to substitute the traditional ITO. Under the assistance of TiO x matrix, not only the connection, adhesion, and stability of AgNWs are greatly enhanced, but also the surface roughness of AgNWs is also reduced. The influence of AgNWs concentration on the performance of CIGSSe solar cells is investigated. When the AgNWs concentration is 2.5 mg/mL, the transmittance and sheet resistance of AgNWs thin film are 93.35% and 93 Ω/sq, respectively, and the devices achieved the highest efficiency of 13.59%.

研究领域: 材料科学 · 能源技术 · 光电技术
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ADVANCED FUNCTIONAL MATERIALS · 2026 · IF 19.9

Boosting Open-Circuit Voltage to a Record 0.692 V in Solution-Processed CIGSSe Solar Cells Through Surface Ga-Rich Engineering

Shuxia Wei,Xuejun Xu,Zongjie Su,Hongyi Lu,Yue Liu,Han Xu,Qianqian Gao,Yunfeng Wang,Ming Li,Tianyu Xing,Siyu Wang,Haoran Li,Li Wu,Yi Zhang

The open-circuit voltage ( V OC ) deficit remains a primary bottleneck hindering the efficiency of solution-processed Cu(In,Ga)(S,Se) 2 (CIGSSe) solar cells, largely due to the uncontrolled elemental diffusion during high-temperature selenization that prevents the formation of a beneficial bandgap gradient. Here, we propose a novel and highly effective low-temperature surface treatment strategy to overcome this long-standing challenge. By spin-coating a gallium-thiourea complex solution onto the pre-fabricated CIGSSe absorber, we construct a strategic Cu-poor, Ga-rich surface layer. Such design widens the surface bandgap, leading to an optimized band alignment at the CIGSSe/CdS heterojunction with a reduced conduction band offset (0.15 eV) and an enlarged valence band offset (1.13 eV). This synergistic effect drastically suppresses interface recombination. As a consequence, we achieve a champion device with a V OC of 0.692 V—the highest value reported to date for solution-processed CIGSSe—and a power conversion efficiency of 16.65% (17.93% with an MgF 2 anti-reflection layer). This work presents a simple yet powerful pathway for targeted front interface engineering, paving the way for high-efficiency, low-cost chalcopyrite photovoltaics.

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Solar RRL · 2024 · IF 6

Solution-Processed Bifacial Cu(In, Ga)(S, Se)2 Thin-Film Solar Cells with a Frontside Power Efficiency of 9.73%

Chenxi Zhao,Bowen Liu,Fuyan Chen,Jiaxin Gao,Xinan Shi,Daocheng Pan

Cu(In, Ga)(S, Se) 2 (CIGSSe) solar cell is one of the most promising thin-film solar cells with a record power conversion efficiency (PCE) of 23.6%. Conventional CIGSSe thin-film solar cells are usually fabricated on Mo-coated soda-lime glass substrate, thereby, the sunlight on the rear side cannot be utilized by the monofacial CIGSSe solar cells owing to the opacity of the Mo electrode. CIGSSe solar cells fabricated on transparent conductive oxide (TCO) electrode enable to fabricate bifacial solar cells, which can generate power on both sides of solar cells, so that bifacial solar cells have a high potential application in building-integrated photovoltaics. However, the PCEs of CIGSSe solar cells fabricated on TCO substrates are significantly lower than those of ones on Mo substrates. In this article, bifacial CIGSSe solar cells on fluorine-doped tin oxide (FTO) substrate are fabricated by using an ionic liquid-assisted solution approach and utilizing a MoO 3 thin film as an interface layer between FTO and CIGSSe absorber layer, yielding a front-side PCE of 9.73% and a back-side PCE of 1.77%.

研究领域: 材料科学 · 光伏技术 · 可再生能源
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