The electron transport layer (ETL) of Sb 2 Se 3 thin film solar cells is not only responsible for electron extraction and transport but also manipulates the orientation of the Sb 2 Se 3 photoactive layer’s growth, which is crucial for performance optimization. In this study, the dual functionality of solution-processed SnO 2 film treated with CdCl 2 was achieved as the ETL in Sb 2 Se 3 solar cells. The CdCl 2 treatment simultaneously improves the efficacy of the SnO 2 ETL and induces the longitudinal growth of Sb 2 Se 3 grains. These two aspects effectively enhance electron transport and/or extraction, thereby reducing the charge recombination, which contributes to the improvement of all device parameters. The results demonstrate that CdCl 2 treatment optimizes the interface properties of the SnO 2 ETL, providing a facile and effective method for enhancing the performance of the Sb 2 Se 3 solar cell.
Enhancing the electrical properties of Sb 2 Se 3 thin films through elemental doping is a crucial strategy to improve its potential applications in photodetectors. In this study, thin films of Co-doped Sb 2 Se 3 were fabricated through electrochemical deposition. When the doping concentration reached x=0.05, Sb 2 Se 3 thin films were effectively fabricated exhibiting [ hk 1] orientation and a large average grain size. Consequently, the electrical characteristics of the films were improved. Following the incorporation of an Al 2 O 3 barrier layer and CdCl 2 treatment of CdS layer, the photodetector utilizing a thin film of Sb 2 Se 3 with x=0.05 demonstrates a significant response within the visible to near-infrared spectrum under 0 bias conditions. The optimal results were achieved at a wavelength of 635 nm, where the dark current (I dark ) was measured at 5.9 × 10 −7 mA, responsivity (R) at 92 mA/W, detectivity (D*) at 2.11 × 10 12 Jones, and the fitting ideal factor (θ) was determined to be 0.959. The selectivity within the visible wavelength range, coupled with the excellent values of D* and θ, position the device as having significant potential for various applications.
Yu Mao,Yuanyuan Huang,Yanmei Deng,Mengyang Wang,Wenjian Chan,Ziyang Ren,Ening Gu,Xianzhong Lin,Guowei Yang
Inkjet-printed Cu 2 ZnSn(S,Se) 4 (CZTSSe) has emerged as a promising route for cost-effective and high-throughput production of photovoltaic devices. To further enhance the performance of CZTSSe solar cells, it is urgently necessary to address the issues of severe interface recombination and carrier transport resistance within the devices. In this sense, a surface modification strategy is introduced by treating the inkjet-printed CZTSSe absorber surface with cadmium chloride (CdCl 2 ). As a result, the Cd-treated CZTSSe films exhibit smooth and compact surfaces and a small conduction band offset, which boosts carrier transport. Furthermore, the Cd treatment significantly reduces interface defects from 5.1 × 10 15 to 2.4 × 10 15 cm −3 , thereby reducing carrier recombination while expanding the depletion width from 138 to 272 nm and improving carrier collection efficiency. Consequently, the optimized CZTSSe device achieves a stimulating increase in power conversion efficiency from 11.83% to 13.64%, which is the highest efficiency reported to date for inkjet-printed CZTSSe solar cells. This work provides critical insights for advancing cost-effective and high-performance inkjet-printed CZTSSe solar cells.
危险品化学品经营许可证（带存储）