NEW JOURNAL OF CHEMISTRY
·
2025
·
IF 2.5
Yafeng Xu,Yu Li,Jian Yao,Xiang Liu,Shengbiao Zhang,Shihao Zhang,Shuqin Dong,Yue Yao,Xihong Ding,Meng Wang
Antimony sulfide (Sb2S3) is regarded as a promising candidate for next-generation photovoltaic technology. In recent years, the efficiency of Sb2S3 solar cells has shown significant improvement, however, there still exists a considerable gap from the theoretical efficiency. This is partially due to the relatively high resistivity and parasitic light absorption of the CdS buffer layer, as well as the unsatisfactory crystal orientation of Sb2S3. In this work, a Zn salt additive is added to chemical bath solution of CdS to regulate the growth of CdS film. Elemental analysis indicates that only a small amount of zinc is deposited into the CdS film. The introduction of the Zn salt additive significantly increases the grain size and electrical conductivity of CdS, while also leading to preferential growth of the [hk1] orientation in Sb2S3 film. The low-cost Sb2S3 solar cells with inexpensive carbon electrodes were fabricated. The enhanced quality of the junction, attributed to the Zn salt additive, leads to improved charge transport and suppressed charge recombination in the Sb2S3 solar cells. As a result, the efficiency increases from 4.90% to 5.74%. This work presents a straightforward and efficient approach for the fabrication of superior CdS buffer layers and Sb2S3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY
·
2021
·
IF 5.742
Fengying Wu,Hu Li,Liquan Yao,Wenwei Lin,Limei Lin,Wenjuan Chen,Dong Wei,Shenglong Liu,Shuiyuan Chen,Guilin Chen
MoS 2 thin film is deposited on ITO/CdS substrate by in-situ hydrothermal method, which is expected to be a potential absorber material for planar heterojunction solar cell due to its high absorber coefficient and carrier mobility. The CdS buffer layer provides a robust template for the quasi-epitaxial growth of MoS 2 with (0 0 2) preferred orientation by enjoying the analogical hexagonal structures and the shared sulfur atoms, resulting in a benign interface of CdS/MoS 2 . Then a device with ITO/TiO 2 /CdS/MoS 2 /Carbon-Ag structure is assembled after coating carbon-Ag electrode. The effects of the growth characteristics, morphology changes and optical properties of MoS 2 on the device performance are studied systematically. Finally, a primary efficiency of 0.12% is achieved using a P-type MoS 2 absorber with a thickness of 305 nm, exhibiting an outstanding stability. The one-dimensional solar cell capacitance simulator (SCAPS) is further used to reveal the bottleneck of device performance. After optimizing the doping density (1 × 10 15 cm −3 ) and defect density (<5 × 10 15 cm −3 ) of MoS 2 film as well as inserting a hole transport layer, the efficiency of MoS 2 planar device can be enhanced to 10.77%. This work provides an in-situ growth route for constructing a CdS/MoS 2 planar heterojunction as a potential candidate for the low-cost solar cells.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2023
·
IF 6.7
Chunkai Wang,Bin Yao,Yongfeng Li,Zhanhui Ding,Ding Ma,Ting Wang,JiaYong Zhang,Dongxu Zhang,Yue Liu,Ruijian Liu
The physical properties of CdS buffer layers and the interface quality between CdS layer and Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber have a significant impact on the performance of CZTSSe solar cells. In the present work, five types of CZTSSe solar cells with conventional structure (denoted as CdS- x -cells, x = 55, 60, 65, 70 and 75) were fabricated by using CdS prepared at deposition temperatures of 55, 60, 65, 70 and 75 ℃, respectively, as buffer layer, and influence mechanism of the deposition temperature of CdS layers on power conversion efficiency (PCE) of the CdS- x -cells was investigated. It is found that the PCE of the CdS- x -cells increases from 8.52% to 10.36% as the deposition temperature rises from 55 to 60 ℃ but falls from 10.36% to 7.14% from 60 to 75 ℃. The analysis on the photovoltaic and electrical parameters indicates that the increase in PCE is predominantly derived from the decreased reverse saturated current density (J 0 ), followed by the decreased series resistance (R S ) and increased shunt resistance (R Sh ). The decreased PCE with the further increasing deposition temperature is mainly contributed from the increased J 0 , followed by the decreased R Sh and photogenerated current density (J L ). The influence mechanism of deposition temperature of the CdS layer on PCE is suggested via quantitatively analysis of influence of electrical, optical properties and crystal quality of CdS prepared at various deposition temperatures on J L and electrical parameters of CdS- x -cells. This work is helpful for improvement of PCE of CZTSSe solar cells by modification of properties of buffer layer.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Jingjing Liu,Mengsha Cao,Zhengdong Feng,Xiaomeng Ni,Jing Zhang,Jianhua Qiu,Shuai Zhang,Huafei Guo,Ningyi Yuan,Jianning Ding
Chemical bath–deposited cadmium sulfide (CBD-CdS) is the most widely used buffer layer material for antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices , but its medium band gap, large band gap offset with transparent conducting oxides , and surface defects must be addressed to improve its applicability. Hexagonal CdS films (60 nm thick) prepared using the thermal evaporation method were used as the buffer layers of Sb 2 (S,Se) 3 photovoltaic devices. Compared with CBD-CdS (60 nm thick), thermal evaporation–deposited CdS (TED-CdS) films have a larger band gap and fewer surface defects. The Sb 2 (S,Se) 3 film deposited on TED-CdS is more compact, and its 1D ribbons are stacked more vertically to the substrate. The band gap offset between CdS and fluorine-doped tin oxide glass decreases from 0.76 eV (CBD-CdS) to 0.60 eV (TED-CdS). Therefore, suppressed electron trap density and charge recombination, as well as improved light harvesting, are achieved. By replacing CBD-CdS with TED-CdS, the best device efficiency increases from 6.14 % to 7.16 %, with the open circuit voltage, short-circuit current density, and fill factor increasing from 0.660 V, 15.96 mA/cm 2 , and 58.37 % to 0.664 V, 17.39 mA/cm 2 , and 62.85 %, respectively. The device stability and reproducibility are also improved.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2018
·
IF 6.735
Youchen Gu,Chen Ye,Xuewen Yin,Jianhua Han,Yu zhou,Heping Shen,Jianbao Li,Xiaojing Hao,Hong Lin
Cadmium sulfide (CdS) is the most widely used buffer material for a variety of thin-film solar cells including Cu 2 ZnSnS 4 . However, reports have shown that CdS film obtained by chemical bath deposition (CBD) is not the ideal buffer layer for pure sulfide CZTS solar cell. Zinc doping is a viable approach to modifying the CdS buffer film, but the present methods are far from satisfactory. Here, we innovatively developed an effective way of Zinc doping using partial electrolyte (PE) treatment, resulting in state-of-the-art buffer layer for solar cells based on high-surface-waviness CZTS light absorber. Our study shows that this Zn PE-treated CdS film improved the properties including coverage, full-range light transmittance and conduction band alignment with CZTS. Ultimately, the resultant modified CdS film boosted the open-circuit voltage of our devices by more than 100 mV, yielding power conversion efficiency (PCE) of 3.30%. We note that this is the highest efficiency that has been reported for all solution-processed CZTS solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
·
2023
·Vol. 109
·期 1
·182-191
·
IF 2.5
Sun Shuo,Zhang Siyu,Han Yuanyuan,Tan Haidong,Wen Jian,Liu Xingyun,Sun Yuxia,Liu Hongri
Abstract The strong Ti-O bonds in TiO 2 and poor compatibility with Sb 2 Se 3 result in poor performance when used as electron transport layers (ETL) for Sb 2 Se 3 solar cells. Therefore, cadmium sulfide is usually used as a buffer layer to improve its compatibility. In the present work, we deposited a layer of CdS by spin coating method on TiO 2 ETL and fabricated TiO 2 /CdS dual ETL. The CdS layer improved the electronic properties of TiO 2 and grain orientation of Sb 2 Se 3 thin films. As a result, the average short circuit current and fill factor of Sb 2 Se 3 solar cells were improved, and the final champion power conversion efficiency was enhanced from 2.6% to 4.71%. This study supplied a route for the application of titanium dioxide as a broad band gap electron transfer material for Sb 2 Se 3 solar cells. Graphical Abstract In this work, we deposited a 120 nm CdS layer on TiO 2 ETL. The CdS layer improved the electronic properties of TiO 2 and optimized the grain orientation of Sb 2 Se 3 thin films. The Jsc and Voc of Sb 2 Se 3 solar cells were also improved, and the ultimate champion power conversion efficiency was enhanced from 2.60 to 4.71%. Our work provides an effective method to improve the photovoltaic performance of Sb 2 Se 3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2022
·
IF 13.599
Licheng Lou,Yuancai Gong,Jiazheng Zhou,Jinlin Wang,Xiao Xu,Kang Yin,Biwen Duan,Huijue Wu,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng
Photo-generated carrier recombination loss at the CZTSSe/CdS front interface is a key issue to the open-circuit voltage ( V OC ) deficit of Cu 2 ZnSnS x Se 4− x (CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO (In 2 O 3 :Sn) interfacial properties. Based on Sn 4+ /DMSO (dimethyl sulfoxide) solution system, a total-area efficiency of 12.87% with a V OC of 529 mV has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the CdS film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/CdS/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.
研究领域:
材料科学
·
太阳能
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）