APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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2021
·Vol. 127
·期 7
·1-8
·
IF 2.584
Zhang Junlin,Wang Yunfan,Zhou Biao,Cao Hongyuan,Yang Xiutao,Li Bing,Zhang Jingquan,Feng Lianghuan,Zeng Guanggen,Zhong Zhengxiang,Ghali Mohsen,Karazhanov Smagul
In this work, CdS thin films were deposited on glass/fluorine-doping tin oxide (FTO) substrates by low-cost chemical bath deposition (CBD), followed by annealing with CdCl 2 -doping (Cl-doping) to fabricate resistive-type photodetectors (PDs) with a vertical structure of glass/FTO/CBD-CdS:Cl/electrode. The effect of annealing with Cl-doping (AwCl) on the various properties of films and the photodetection performance of PDs were systematically characterized by special testing methods. The results revealed that the surface morphology and crystal structure of CBD-CdS:Cl films were improved, accompanied by an enhancement of hexagonal phase (002) crystal plane (wurtzite structure), and the optical bandgap of films can be adjusted between 2.43 and 2.26 eV while the electron activation energy of the films was reduced from 75.9 to 10.3 meV after AwCl. Furthermore, the light responsivity of CBD-CdS:Cl PDs were 0.57, 0.59 and 1.67 A/W under 365, 400 and 530 nm illumination at a bias of −2.0 V, respectively, and the detectivity of photons at corresponding wavelengths were 3.7 × 10 8 , 3.9 × 10 8 and 1.08 × 10 9 Jones. Meanwhile, the PDs showed optimized repeatability and improved sensitivity under periodic illumination. The above results demonstrated that the CBD-CdS:Cl PDs with a vertical structure developed in this work had good detection performance at certain characteristic wavelengths.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2021
·
IF 4.126
Jiayong Zhang,Ting Wang,Bin Yao,Zhanhui Ding,Yongfeng Li,Chunkai Wang,Jia Liu
High carrier recombination at the Cu2ZnSn (S, Se)4(CZTSSe)/CdS interface is the critical issue that results in the low power conversion efficiency (PCE) of CZTSSe solar cells. To reduce the recombination by optimizing the CZTSSe/CdS interfacial structure, we fabricated a Zn doped CdS (ZnxCd1 – xS) thin film with x of 0–0.32 and a CZTSSe solar cell with the ZnxCd1 – xS as the buffer layer. It is found that Zn substitutes for Cd in the x range of 0–0.26 and that some of the Zn substitutes for Cd and another Zn locates in the interstitial site of the CdS lattice in the x range of 0.26–0.32, which make the lattice mismatch between CZTSSe and ZnxCd1 – xS decrease in x of 0–0.26 and increase in x of 0.26–0.32. The conduction band offset at the CZTSSe/ZnxCd1 – xS interface is demonstrated by XPS to be a positive ″spike″-like type and increases from 0.11 to 0.43 eV as x increases from 0 to 0.32. PCE is increased from 5.00 to 7.73% by optimizing x. The increased PCE is attributed to increased open-circuit voltage (VOC) and filling factor (FF), while the decreased PCE is due to decreased VOC, FF, and JSC. By using quantitative analysis methods, the increased VOC and FF are mainly attributed to the increased shunt resistance (Rsh) and decreased reverse saturation current density (J0), and the decreased short-circuit current density (JSC) is attributed to the increased conduction band offset (CBO). The influence mechanism of Zn doping on Rsh, J0, and CBO is discussed.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
VACUUM
·
2022
·
IF 4.11
Wen-Wei Lin,Ning-Wei Wang,Ze-Ying Lan,Zhe Fu,Zhi-Ping Huang,Li-Mei Lin,Qing-Ying Ye,Shui-Yuan Chen,Gui-Lin Chen
In this work, we develop a vapor transport deposition (VTD) technology to prepare CdS film with tetragonal phase for the first time, and then construct a CdS/Sb 2 Se 3 planar heterojunction by full VTD tactics. Compared with the CdS synthesized by traditional chemical bath deposition (CBD), the CdS-VTD has superior crystalline, conductivity and lower Urbach energy, which also induces the growth orientation of Sb 2 Se 3 and has a favorable energy level matching structure with Sb 2 Se 3 . With the improved carrier transport efficiency, finally, the built carbon-based Sb 2 Se 3 device delivers an efficiency of 4.91%, obviously improved by 15.8% than Sb 2 Se 3 device with CdS-CBD (4.24%), which is the champion Sb 2 Se 3 device with full VTD process and pave a successive way for the construction of CdS/Sb 2 Se 3 planar heterojunction.
研究领域:
材料科学
·
太阳能电池研究
✓ 已验证
DOI
高影响因子
Advanced Materials Interfaces
·
2019
·Vol. 6
·期 12
·1900367
·
IF 4.713
Lun Cai,Wenxian Wang,Lei Jin,Zhirong Yao,Wenjie Lin,Lanxiang Meng,Bin Ai,Zongcun Liang,Yuelong Huang,Fuqin Zhang,Pietro P. Altermatt,Hui Shen
Most crystalline silicon (c-Si) solar cells are based on high temperature–processed p-n junctions or highly doped heterojunctions. The concept of dopant-free carrier selective contact has become a research hotspot and been successfully demonstrated with n-type Si wafers, showing the great potential of simplified fabrication process and lower thermal-consuming. However, there are few successful cases on p-Si, dopant-free p-Si/CdS (cadmium sulfide)/ITO (indium tin oxide) solar cells with champion efficiency of 12.29% (device area 4 cm 2 ) have been demonstrated with DC magnetron sputtered CdS thin films working as electron-selective contact. A proper annealing treatment is found essential in improving the p-Si/CdS/ITO heterocontact and device performance. The author's preliminary results confirm the feasibility of preparation of efficient p-Si wafer–based dopant-free solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2023
·
IF 4.6
Jiang Cheng,Zhen Zhang,Minghao Zhao,Youwei Guan,Xihao Chen,Xiang Meng,Hua Tang,Lu Li,Shenghao Wang
CdS films prepared via chemical bath deposition exhibit extremely good performance as a buffer layer of chalcogenide solar cells. However, their commercial application is very limited because of the production of a large amount of wastewater containing cadmium. In this study, we develop an efficient way to prepare CdS films using the spin-coating technique. The spin solution is anhydrous, and the oxygen content can be well controlled by changing the Cd/S content ratio in the solution. The crystal structure, morphology, and optical and electrical properties of CdS films with different Cd/S content ratios are characterized. The effect of the oxygen content on the device performance is investigated. We find that the introduction of an appropriate amount of oxygen can improve the carrier transport efficiency by decreasing the interface recombination. The spin-coated CdS films have good coverage of the substrate for film thicknesses below 50 nm. By the optimizing of Cd/S content ratio, we achieve an improved efficiency of 5.76% for the Sb 2 Se 3 solar cells. This preparation technique is sufficiently simple for large-scale processing and produces much less wastewater containing cadmium; thus, it is promising for application to future large-scale solar cell production.
研究领域:
材料科学
·
太阳能
·
纳米技术
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2016
·Vol. 27
·期 8
·7839-7844
·
IF 1.798
Chang Xi,Jiang Wenlong,Ding Guiying,Wang Jin,Zhang Gang,Yao Guangxin
The device inserted 0.5 nm thick cadmium sulfide (CdS) as buffer layer, prepared by vacuum thermal evaporation method, has been studied on the non-doped blue organic light-emitting diode. Compared to the device without ultra-thin CdS film, the maximum luminance of the device with ultra-thin CdS film was 11,370 cd/m 2 at 11 V, and the maximum current efficiency reached 3.10 cd/A, increased 1.5 times and 1.2 times, respectively. In the optimized devices with the structure of ITO/MoO 3 (10 nm)/TPABBI (35 nm)/Bphen (40 nm)/CdS (0, 0.1, 0.3 and 0.5 nm)/LiF (0.5 nm)/Al (100 nm), the effects of CdS layer on the photoelectric performance of the devices were investigated in detail. When the CdS thickness was 0.3 nm, the maximum luminance was 13,590 cd/m 2 at 9 V and the turn on voltage was only 3 V. The maximum current efficiency of 3.42 cd/A was obtained. It is indicated that the simple structure of the device with inserted ultra-thin CdS film, cheap and stable inorganic photoelectric material, may be a promising way to fabricate hybrid organic–inorganic LEDs with high performances.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）