High-power phosphor-converted laser lighting and laser display have gained significant attention due to their superior energy efficiency and long lifespan. However, the elevated operating temperatures under high-power excitation induce severe thermal quenching of phosphor materials, compromising the thermal stability and emission performance. To address this issue, we proposed a multi-component co-doping strategy by incorporating Ba2+/Si4+ and Sr2+/Si4+ into Ce: YAG phosphor ceramics. The optimized Sr05Ba050 sample demonstrated exceptional thermal stability, retaining 96.56% of its emission intensity at 423 K. Moreover, the thermal saturation threshold increased to 73 W/mm2, significantly surpassing that of undoped Ce: YAG. This improvement is attributed to a combination of lattice stabilization and reduced electron-phonon coupling induced by the co-doping approach. Additionally, the optimized sample achieved a luminous efficiency of radiation (LER) of 248.82 lm/W and exhibited a lower surface temperature under high-power excitation. These findings highlight the effectiveness of Ba2+/Si4+ and Sr2+/Si4+ co-doping in mitigating thermal quenching and enhancing high-temperature performance, providing valuable insights for next-generation high-power lighting and display applications.
Solid laser lighting with high photoelectric conversion efficiency and compact size has been increasingly vital in lighting applications. Extensive research has been conducted to obtain high-quality color converters for application to high-power and high-luminance laser lighting. Currently, Y3Al5O12:Ce3+ phosphor in glass (Ce:PiG) and Y3Al5O12:Ce3+ phosphor-in-glass film (Ce:PiF) possessing high efficiency, low cost, easy fabrication, and controllable chromaticity are becoming the most mainstream research directions. In this study, by modifying the glass particle size and sintering temperature, investigating the relevant host glass, and so forth, high-performance Ce:PiG was developed through a one-step co-sintering technology. It possesses a high internal quantum efficiency, approaching 100% of the original phosphors (92.5%). The luminous efficacy (LE) of the Ce:PiG was 240 lm/W at 2.18 W/mm2 under 450 nm blue laser diode (LD) excitation, which is the best result yet reported. Furthermore, to enhance the laser saturation threshold, the fabricated Ce:PiF relying on a sapphire substrate can withstand an 8 W/mm2 blue incident power density. The obtained sample can even reach an LE of 251.5 lm/W, which is an obvious improvement to Ce:PiG. In addition, the result, an LD module combined with the sample that meets the standard white light source, indicates that this work has good prospects for white laser lighting.
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