Xiaoyan Xiong,Lijiu Cao,Siyi Li,Xuqi Hu,Guoqiang Liu,Yunpeng Gong,Yufang Chen,Tao Jin
In this study, a composite heterojunction material of Ti 3 C 2 Tx MXene nanosheets with Co 9 S 8 @In 2 S 3 nanoparticles , named (Co 9 S 8 @In 2 S 3 )/MXene, was constructed using a hydrothermal method . The materials were characterized and analyzed in terms of morphology, structure, and selective response properties to triethylamine gas. The materials were characterized by SEM, TEM, HAADF, STEM, XRD , XPS, BET, and other tests. The results showed a response value of 44.9 for (Co 9 S 8 @In 2 S 3 )/20% MXene at 350 °C and 20 ppm triethylamine (TEA), with a response/recovery time of 63 s/115 s respectively. In particular, (Co 9 S 8 @In 2 S 3 )/MXene exhibits excellent immunity to interference and a highly stable adsorption/desorption process with almost no noise interference. In addition, the (Co 9 S 8 @In 2 S 3 )/MXene material showed stable and fast selective response to TEA in different types of gas mixtures compared with the commonly used single TEA selective response study method. The results of this study provide valuable techniques and theories for the Environmental protection application of TEA selective response materials. Finally, this article performs a comparative analysis on the mechanism of selection response and stability of (Co 9 S 8 @In 2 S 3 )/MXene materials, and concludes that the process determining the specific response of (Co 9 S 8 @In 2 S 3 )/MXene materials to particular gas molecules includes three processes: shape-selective adsorption, redox reaction , and charge carrier conduction.
Yufang Chen,Xiaoyan Xiong,Jianhang Nie,Siyi Li,Zifan Zhu,Lijiu Cao,Tao Jin
Using Cobalt 2-methylimidazole (ZIF-67) as the precursor, Co 9 S 8 /In 2 S 3 was successfully synthesized. The characteristic structure of Co 9 S 8 /In 2 S 3 is Co Metal-Organic framework (Co-MOF). Co 9 S 8 /In 2 S 3 semiconductor material was prepared by the hydrothermal method , which presented a special multi-wrinkled flower-like morphology. The Co 9 S 8 /In 2 S 3 semiconductor material has selectivity and high sensitivity to triethylamine (Rair/Rgas=100.3, 20 ppm), ultra-low detection limit (100 ppb), and good linearity relation at working temperature of 300 °C. The products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The growth mechanism of these products was proposed. A possible mechanism to explain the high sensing properties of these morphologies was that the Co 9 S 8 /In 2 S 3 material had p-n heterojunction structure characteristics, coupled with its high porosity and specific surface area on the morphology helped to improve the sensitivity to triethylamine (TEA).
危险品化学品经营许可证（带存储）