Small
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2025
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IF 12.1
Di Qian,Yahong Jin,Zhenzhang Li,Haoyi Wu,Yihua Hu
The pursuit of broadband near-infrared (NIR) phosphors for next-generation smart NIR light sources has garnered extensive interest. However, developing phosphors efficiently excitable by blue light to produce thermally stable and highly efficient broadband NIR emission surpassing 830 nm remains a formidable challenge. Herein, a novel CaGd 2 Ga 4 SiO 12 garnet is reported, designed through a structure reconstruction approach to host Cr 3+ ions for developing a high-performance broadband NIR phosphor. By strategically introducing Jahn–Teller distortion at the octahedral sites via chemical pressure, Cr 3+ is endowed with a super-broadband NIR emission spanning 600–1300 nm centered at 837 nm. The full-width at half maximum (FWHM) varies from 187 to 223 nm across Cr 3+ doping concentrations, with the highest internal quantum efficiency (IQE) of 99.01%. Remarkable luminescence thermal stability (90.37%@423 K) is bolstered by a weak electron-phonon coupling (EPC) effect and trap-mediated energy compensation, a result of the heterovalent ion substitutions in dodecahedral and tetrahedral sites. Furthermore, a prototype broadband NIR phosphor-converted light-emitting diode (pc-LED) is fabricated, delivering a substantial NIR output power of 287.7 mW at 1100 mA and a power conversion efficiency (PCE) of 24.4% at 30 mA, enabling impressive performance in versatile applications, including component analysis, non-destructive testing, NIR imaging, and night vision.
研究领域:
材料科学
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光学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2024
·
IF 5.8
L. Pan,M. Delaey,Y. Wang,D. Poelman
Near-infrared persistent luminescence materials have recently attracted considerable attention in the field of bio-imaging, food analysis, anti-counterfeiting, etc. However, the limited number of efficient emitters restricts their further development. Herein, a novel broadband near-infrared long persistent phosphor Na 2 CaGe 5 SiO 14 :xCr 3+ was synthesized using a high-temperature solid-phase method. Its emission range is mainly within 600–900 nm, and the persistent luminescence duration of the phosphor with the optimal doping concentration is more than 12 h. The optical properties of the samples and the relationship between the crystal field and chromium ion concentration were systematically investigated by UV diffuse reflectance spectra as well as fluorescence spectra, and the occupancy of Cr 3+ ions in the Na 2 CaGe 5 SiO 14 matrix was probed. The energy transfer process between Cr 3+ ions at different temperatures and the decay behavior at different emission wavelengths were further analyzed in conjunction with low-temperature spectra and photoluminescence decay curves. Finally, Cr ion-doped silicogermanate near-infrared long persistent luminescent materials were tested for biological tissue penetration, demonstrating their potential applications in bio-imaging.
研究领域:
材料科学
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光学
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生物医学工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
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2022
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IF 10.383
Shihai Miao,Yanjie Liang,Dongxun Chen,Ruiqi Shi,Xihui Shan,Yi Zhang,Fei Xie,Xiao-Jun Wang
Infrared-emitting phosphor-converted light-emitting diodes (LEDs) are desirable light sources for a very wide range of applications such as spectroscopy analysis, nondestructive monitoring, covert information identification, and night-vision surveillance. The most important aspect of infrared emitters for spectroscopy is to cover the widest possible wavelength range of emitted light. However, developing ultrabroad-band infrared emitters based on converter technology is still a challenging task due to the lack of suitable phosphor materials that emit in a wide wavelength range upon excitation from blue-emitting chips. Herein, this work demonstrates Cr3+-activated Mg2SiO4 infrared phosphors with a super wide infrared spectral range of 600 to 1400 nm and high internal quantum yield up to 80.4% upon 460 nm excitation. Site-selective occupancy of Cr3+ emitters in two different Mg sites in the Mg2SiO4 lattice results in two distinct broad emission bands peaking at 760 and 970 nm, both of which contribute to the ultrabroad-band infrared luminescence with a full width at half maximum (FWHM) of 419 nm. This is by far the broadest infrared emission to the best of our knowledge. On this basis, an ultrabroad-band infrared LED prototype has been fabricated by the combination of the Mg2SiO4:Cr3+ phosphor with a blue LED chip, which shows great potential for imaging and sensing applications. This work demonstrates that site-selective occupancy control of Cr ions is an effective strategy for developing ultrabroad-band Cr3+-doped phosphors.
研究领域:
材料科学
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光学工程
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2025
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IF 6.3
Zhongyu Tong,Jiamin Li,Yuqing Yan,Feifeng Huang,Guanyu Zhu,Huanping Wang,Hua Yu,Degang Deng
The development of tunable broadband near-infrared (NIR) fluorescent materials with excellent luminescent properties is still a challenge for the next generation of intelligent NIR light sources. Here, a series of Cr 3+ doped magnetoplum type NIR phosphors were prepared by the high-temperature solid-state method. Their luminescent properties and the methods to broaden the luminescence bandwidth were discussed in detail. In BaAl 12 O 19 : Cr 3+ phosphor, Cr 3+ -Cr 3+ ion pair was constructed based on heavily doped Cr 3+ ions, so as to broaden its spectral emission range. With the increase of Cr 3+ doping concentration, the full width at half maximum (FWHM) of BaAl 12 O 19 : Cr 3+ sample increased from 18.5 nm to 93.7 nm. Furthermore, the crystal field environment of Cr 3+ ions in BaAl 12 O 19 : Cr 3+ phosphors was changed by cationic substitution (Sr 2+ substituted Ba 2+ ion site). The FWHM of NIR emission increases from 49.37 nm to 123.78 nm, and the internal quantum efficiency (IQE) increases from 65.6 % to 76.2 %, with good thermal stability ( I 373 K / I 298 K = 77.3 %). An intense NIR emission of 31.3 mW at 100 mA is produced by the phosphor-converted light-emitting diode (pc-LED), exhibiting a photoelectric efficiency of 15.3 %.
研究领域:
材料科学
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光学材料
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固态化学
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光子学
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发光光谱学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）