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Ultra-broadband of up to 200 nm near-infrared phosphors based on one-site occupation strategy for multipurpose applications in light-emitting diodes

Xianzhe Zhang,Pengpeng Dai,Dawei Wen

Portable near-infrared (NIR) lighting source stimulates great efforts to exploit NIR phosphor-converted LEDs (pc-LEDs) that push the rapid development of broadband NIR-emitting phosphors. Although Cr 3+ -activated NIR phosphors designed by multisites occupation strategy show significant potential in emission bandwidth, poor spectral stability caused by different thermal quenching behaviors is a brake on practical application due to different local structure around Cr centers. One-site-based NIR phosphors seem to be an effective method to solve aforementioned problem. Herein, we report a type of new ultra-broadband one-site-based NIR-emitting phosphors NaSc 1-x P 2 O 7 :xCr 3+ (NSP:xCr 3+ ) with emission at 910 nm and full width at half maximum (FWHM) of up to ∼200 nm. Their FWHM value exceeds all one-site-based Cr 3+ -activated phosphors and some multiple-sites ones. Structural analysis and low-temperature spectra demonstrate that such impressive broadband NIR emission originates from Cr 3+ occupying at single octahedral Sc site. At 425 K, integrated emission intensity of NSP:0.04Cr 3+ phosphor maintains 53.8% of room temperature. A NIR pc-LED prototype is fabricated by using NSP:0.04Cr 3+ phosphor with a blue LED chip, and its multipurpose applications in non-destructive detection, night vision and analysis of foodstuff are demonstrated. These findings indicate that broadband NSP:0.04Cr 3+ NIR phosphor enabled by one-site occupation strategy has potential prospect for multipurpose NIR pc-LEDs applications.